Patents by Inventor Tomi Hassinen

Tomi Hassinen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9608219
    Abstract: The present invention relates to a semiconductor structure and a method for its production, the semiconductor structure comprising at least one conductor region and at least two semiconductor regions, which semiconductor regions are partly separated by the at least one conductor region. The at least one conductor region comprises openings extending between the semiconductor regions which are partly separated by the respective conductor region. The semiconductor regions comprise at least one organic semiconductor material having a specific HOMO energy level, in particular a DPP polymer. The conductor region comprises a conductive material having a specific work function, said combination of specific energy level and work function allowing for a simple preparation of the conductive region. The invention further relates to a method for providing such a semiconductor structure.
    Type: Grant
    Filed: September 3, 2015
    Date of Patent: March 28, 2017
    Assignee: BASF SE
    Inventors: Tero Mustonen, Roger Pretot, Tomi Hassinen
  • Publication number: 20160072084
    Abstract: The present invention relates to a semiconductor structure and a method for its production, the semiconductor structure comprising at least one conductor region and at least two semiconductor regions, which semiconductor regions are partly separated by the at least one conductor region. The at least one conductor region comprises openings extending between the semiconductor regions which are partly separated by the respective conductor region. The semiconductor regions comprise at least one organic semiconductor material having a specific HOMO energy level, in particular a DPP polymer. The conductor region comprises a conductive material having a specific work function, said combination of specific energy level and work function allowing for a simple preparation of the conductive region. The invention further relates to a method for providing such a semiconductor structure.
    Type: Application
    Filed: September 3, 2015
    Publication date: March 10, 2016
    Applicant: BASF SE
    Inventors: Tero MUSTONEN, Roger Pretot, Tomi Hassinen
  • Publication number: 20130228771
    Abstract: The present invention relates to a semiconductor structure and a method for its production, the semiconductor structure comprising at least one conductor region 9 and at least two semiconductor regions (30,40), which semiconductor regions are partly separated by the at least one conductor region. The at least one conductor region comprises openings (22) extending between the semiconductor regions which are partly separated by the respective conductor region. The semiconductor regions comprise at least one organic semiconductor material having a specific HOMO energy level, in particular a DPP polymer. The conductor region comprises a conductive material having a specific work function, said combination of specific energy level and work function allowing for a simple preparation of the conductive region. The invention further relates to a method for providing such a semiconductor structure.
    Type: Application
    Filed: December 19, 2011
    Publication date: September 5, 2013
    Applicant: BASF SE
    Inventors: Tero Mustonen, Roger Pretot, Tomi Hassinen