Abstract: According to an example aspect of the present invention, there is provided a bonding structure for forming at least one electrical connection between a photonic substrate and an optoelectronic component. The bonding structure comprises an electroconductive pad between the photonic substrate and the optoelectronic component. The electroconductive pad comprises at least two separated portions. The bonding structure comprises a bond layer between the electroconductive pad and the optoelectronic component, and between the at least two portions of the electroconductive pad.

Abstract: The present invention relates to a semiconductor structure and a method for its production, the semiconductor structure comprising at least one conductor region and at least two semiconductor regions, which semiconductor regions are partly separated by the at least one conductor region. The at least one conductor region comprises openings extending between the semiconductor regions which are partly separated by the respective conductor region. The semiconductor regions comprise at least one organic semiconductor material having a specific HOMO energy level, in particular a DPP polymer. The conductor region comprises a conductive material having a specific work function, said combination of specific energy level and work function allowing for a simple preparation of the conductive region. The invention further relates to a method for providing such a semiconductor structure.

Abstract: The present invention relates to a semiconductor structure and a method for its production, the semiconductor structure comprising at least one conductor region and at least two semiconductor regions, which semiconductor regions are partly separated by the at least one conductor region. The at least one conductor region comprises openings extending between the semiconductor regions which are partly separated by the respective conductor region. The semiconductor regions comprise at least one organic semiconductor material having a specific HOMO energy level, in particular a DPP polymer. The conductor region comprises a conductive material having a specific work function, said combination of specific energy level and work function allowing for a simple preparation of the conductive region. The invention further relates to a method for providing such a semiconductor structure.

Abstract: The present invention relates to a semiconductor structure and a method for its production, the semiconductor structure comprising at least one conductor region 9 and at least two semiconductor regions (30,40), which semiconductor regions are partly separated by the at least one conductor region. The at least one conductor region comprises openings (22) extending between the semiconductor regions which are partly separated by the respective conductor region. The semiconductor regions comprise at least one organic semiconductor material having a specific HOMO energy level, in particular a DPP polymer. The conductor region comprises a conductive material having a specific work function, said combination of specific energy level and work function allowing for a simple preparation of the conductive region. The invention further relates to a method for providing such a semiconductor structure.