Abstract: A method of epitaxial growth of a germanium film on a silicon substrate includes the steps of: providing a silicon substrate, placing the silicon substrate in a vacuum chamber, heating the silicon substrate to a temperature that is lower than 300° C., and forming a monocrystalline germanium film on the silicon substrate in the vacuum chamber, by employing an electron cyclotron resonance chemical vapor deposition (ECR-CVD) approach, wherein the step of forming a monocrystalline germanium film on the silicon substrate in the vacuum chamber further includes dissociating a reaction gas introduced into the vacuum chamber in utilization of a microwave source, such that the monocrystalline germanium film is deposited on the silicon substrate, and wherein the reaction gas includes at least germane (GeH4) and hydrogen gas (H2).

Abstract: The present invention relates to a method for manufacturing silicon thin-film solar cells, including: providing a substrate; forming a first electrode on the substrate; forming a first doped semiconductor layer on the first electrode by chemical vapor deposition; forming an intrinsic layer on the first doped semiconductor layer by chemical vapor deposition, where the intrinsic layer includes a plurality of amorphous/nanocrystalline silicon layers, and the intrinsic layer has various energy bandgaps formed by varying average grain sizes of the amorphous/nanocrystalline silicon layers; forming a second doped semiconductor layer on the intrinsic layer by chemical vapor deposition, where one of the first doped semiconductor layer and the second doped semiconductor layer is a p-type amorphous silicon layer and the other is an n-type amorphous/nano-microcrystalline silicon layer; and forming a second electrode on the second doped semiconductor layer.

Abstract: The present invention relates to a method for manufacturing silicon thin-film solar cells, including: providing a substrate; forming a first electrode on the substrate; forming a first doped semiconductor layer on the first electrode by chemical vapor deposition; forming an intrinsic layer on the first doped semiconductor layer by chemical vapor deposition, where the intrinsic layer includes a plurality of amorphous/nanocrystalline silicon layers, and the intrinsic layer has various energy bandgaps formed by varying average grain sizes of the amorphous/nanocrystalline silicon layers; forming a second doped semiconductor layer on the intrinsic layer by chemical vapor deposition, where one of the first doped semiconductor layer and the second doped semiconductor layer is a p-type amorphous silicon layer and the other is an n-type amorphous/nano-microcrystalline silicon layer; and forming a second electrode on the second doped semiconductor layer.