Abstract: A light-emitting diode array comprising a conductive layer formed on a substrate, separate light-emitting portions formed on the conductive layer, a first electrode formed on at least part of an upper surface of each light-emitting portion, and a second electrode formed on the conductive layer adjacent to the light-emitting portions; the first electrode comprising a common switching electrode matrix; the second electrode comprising a common electrode divided such that one second electrode exists in every block; and at least one of bonding pads extending to the first common electrode and the second common electrode being formed on a bonding portion formed on the conductive layer like an island, whereby the bonding pads are separate from each other.

Abstract: A semiconductor integrated circuit device having a plurality of semiconductor electronic members including a field effect transistor, intended for suppressing a sidegating effect on the field effect transistor, wherein accumulation of majority carriers of the field effect transistor is suppressed at the interface of heterojunction in the buffering compound semiconductor layer and the interface between the substrate and the buffering compound semiconductor layer in the device isolation region so that the discontinuity of energy forbidden bands of the semiconductors caused at the interfaces does not form a potential barrier upon conduction of the carriers into the substrate, whereby the sidegating effect from the resistor element, etc. placed adjacently to the field effect transistor can be decreased drastically.

Abstract: A light-emitting diode array comprising a conductive layer formed on a substrate, pluralities of separate light-emitting portions formed on the conductive layer, a first groove formed in the conductive layer to divide the light-emitting portions to blocks, a first electrodes formed on at least part of an upper surface of each light-emitting portion, a second electrode formed directly on the conductive layer in each block, switching common wirings separately connecting the first electrodes and first bonding pads each connected to each common wiring, first bonding pads each connected to each common wiring, and second bonding pads each connected to each second electrode, the first bonding pads and the second bonding pads being arranged longitudinally in a row, and a ratio of the number of the first bonding pads to the number of the second bonding pads being 1:n (n?3).

Abstract: A light-emitting diode array comprising a conductive layer formed on a substrate, pluralities of separate light-emitting portions formed on the conductive layer, a first groove formed in the conductive layer to divide the light-emitting portions to blocks, first electrodes each formed on at least part of an upper surface of each light-emitting portion, one second electrode formed directly on the conductive layer in each block, common switching wirings separately connected to the first electrodes, first bonding pads each connected to each common wiring, first bonding pads each connected to each common wiring, and second bonding pads each connected to each second electrode, n light-emitting portions (n is an even number) being arranged transversely in each block, and second grooves being formed in the conductive layer between adjacent light-emitting portions such that the second grooves are arranged short and long alternately, with the nearest one to the first groove being short.

Abstract: A light emitting diode array comprises compound semiconductor layers epitaxially grown on a p-type GaAs conductive layer 11 formed on a semi-insulating GaAs substrate 30. The epitaxial layer is isolated and divided into a plurality of light emitting parts 1 which function as a light emitting diode. A Si-doped n-type GaAs buffer layer 31 is interposed between the semi-insulating GaAs substrate 30 and the p-type GaAs conductive layer 11. In the light emitting diode array comprising this epitaxial configuration, it is possible to prevent the short-circuit defect due to diffusion of p-type dopant from the p-type GaAs conductive layer into the semi-insulating GaAs substrate made by the LEC method.

Abstract: A light-emitting diode array comprising a conductive layer formed on a substrate; a plurality of separate light-emitting portions formed on the conductive layer; a first electrode formed on at least part of an upper surface of each of the light-emitting portions; and a second electrode formed on the conductive layer adjacent to the light-emitting portions, wherein the second electrode is a common electrode for operating the light-emitting portions, and wherein the conductive layer is removed in areas between adjacent light-emitting portions except for areas constituting current paths to the light-emitting portions.

Abstract: A light-emitting diode array comprising a conductive layer formed on a substrate, pluralities of separate light-emitting portions formed on the conductive layer, a first groove formed in the conductive layer to divide the light-emitting portions to blocks, first electrodes each formed on at least part of an upper surface of each light-emitting portion, one second electrode formed directly on the conductive layer in each block, common switching wirings separately connected to the first electrodes, first bonding pads each connected to each common wiring, first bonding pads each connected to each common wiring, and second bonding pads each connected to each second electrode, n light-emitting portions (n is an even number) being arranged transversely in each block, and second grooves being formed in the conductive layer between adjacent light-emitting portions such that the second grooves are arranged short and long alternately, with the nearest one to the first groove being short.

Abstract: A light-emitting diode array comprising a conductive layer formed on a substrate, pluralities of separate light-emitting portions formed on the conductive layer, a first groove formed in the conductive layer to divide the light-emitting portions to blocks, a first electrodes formed on at least part of an upper surface of each light-emitting portion, one second electrode formed directly on the conductive layer in each block, switching common wirings separately connecting the first electrodes and first bonding pads each connected to each common wiring, first bonding pads each connected to each common wiring, and second bonding pads each connected to each second electrode, the first bonding pads and the second bonding pads being arranged longitudinally in a row, and a ratio of the number of the first bonding pads to the number of the second bonding pads being 1:n (n?3).

Abstract: A light-emitting diode array comprising a conductive layer formed on a substrate, separate light-emitting portions formed on the conductive layer, a first electrode formed on at least part of an upper surface of each light-emitting portion, and a second electrode formed on the conductive layer adjacent to the light-emitting portions; the first electrode comprising a common switching electrode matrix; the second electrode comprising a common electrode divided such that one second electrode exists in every block; and at least one of bonding pads extending to the first common electrode and the second common electrode being formed on a bonding portion formed on the conductive layer like an island, whereby the bonding pads are separate from each other.

Abstract: A light-emitting diode array comprising a conductive layer formed on a substrate; a plurality of separate light-emitting portions formed on the conductive layer; a first electrode formed on at least part of an upper surface of each of the light-emitting portions; and a second electrode formed on the conductive layer adjacent to the light-emitting portions, wherein the second electrode is a common electrode for operating the light-emitting portions, and wherein the conductive layer is removed in areas between adjacent light-emitting portions except for areas constituting current paths to the light-emitting portions.

Abstract: A light-emitting diode array comprising a conductive layer formed on a substrate, a plurality of separate light-emitting parts formed on the conductive layer, a first electrode formed on at least part of a top surface of each light-emitting part, and a second electrode formed on the conductive layer near the light-emitting part, the second electrode being a common electrode for operating a plurality of the light-emitting parts, and regions of the conductive layer between the adjacent light-emitting parts being removed.

Abstract: A light-emitting diode array comprising a conductive layer formed on a substrate, a plurality of separate light-emitting parts formed on the conductive layer, a first electrode formed on at least part of a top surface of each light-emitting part, and a second electrode formed on the conductive layer near the light-emitting part, the second electrode being a common electrode for operating a plurality of the light-emitting parts, and regions of the conductive layer between the adjacent light-emitting parts being removed.

Abstract: A high-power light-emitting diode array wherein an epitaxial layer prepared by accumulating a plurality of crystal layers is formed on a substrate 1, a plurality of light-emitting diode sections 10, which have been insulated and divided, is contained, and each surface of light-emitting part 12a of the light-emitting diode sections 10 is covered with protective films (11, 14) is characterized in that a total thickness of the protective films covering each surface of light-emitting part 12a of the plurality of light-emitting diode sections 10 is allowed to be 1 &mgr;m or thinner.