Patents by Inventor Tomihito Ohba

Tomihito Ohba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Atomic layer etching of GaN and other III-V materials
    Patent number: 10056264
    Abstract: Provided herein are ALE methods of removing III-V materials such as gallium nitride (GaN) and related apparatus. In some embodiments, the methods involve exposing the III-V material to a chlorine-containing plasma without biasing the substrate to form a modified III-V surface layer; and applying a bias voltage to the substrate while exposing the modified III-V surface layer to a plasma to thereby remove the modified III-V surface layer. The disclosed methods are suitable for a wide range of applications, including etching processes for trenches and holes, fabrication of HEMTs, fabrication of LEDs, and improved selectivity in etching processes.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: August 21, 2018
    Assignee: Lam Research Corporation
    Inventors: Wenbing Yang, Tomihito Ohba, Samantha Tan, Keren Jacobs Kanarik, Jeffrey Marks, Kazuo Nojiri
  • ATOMIC LAYER ETCHING OF GaN AND OTHER III-V MATERIALS
    Publication number: 20160358782
    Abstract: Provided herein are ALE methods of removing III-V materials such as gallium nitride (GaN) and related apparatus. In some embodiments, the methods involve exposing the III-V material to a chlorine-containing plasma without biasing the substrate to form a modified III-V surface layer; and applying a bias voltage to the substrate while exposing the modified III-V surface layer to a plasma to thereby remove the modified III-V surface layer. The disclosed methods are suitable for a wide range of applications, including etching processes for trenches and holes, fabrication of HEMTs, fabrication of LEDs, and improved selectivity in etching processes.
    Type: Application
    Filed: June 3, 2016
    Publication date: December 8, 2016
    Inventors: Wenbing Yang, Tomihito Ohba, Samantha Tan, Keren Jacobs Kanarik, Jeffrey Marks, Kazuo Nojiri