Patents by Inventor Tomio Katata
Tomio Katata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20120152168Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.Type: ApplicationFiled: February 29, 2012Publication date: June 21, 2012Applicant: Kabushiki Kaisha ToshibaInventors: Atsuko Sakata, Junichi Wada, Seiichi Omoto, Masaaki Hatano, Soichi Yamashita, Kazuyuki Higashi, Naofumi Nakamura, Masaki Yamada, Kazuya Kinoshita, Tomio Katata, Masahiko Hasunuma
-
Patent number: 8148274Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.Type: GrantFiled: January 24, 2008Date of Patent: April 3, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Junichi Wada, Atsuko Sakata, Seiichi Omoto, Masaaki Hatano, Soichi Yamashita, Kazuyuki Higashi, Naofumi Nakamura, Masaki Yamada, Kazuya Kinoshita, Tomio Katata, Masahiko Hasunuma
-
Patent number: 7994054Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a first metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, oxidizing at least part of the first metal film with oxidizing species remaining in the insulating film, and forming a second metal film, which includes any of a high melting point metal and a noble metal, on the first metal film, the first metal film and the second metal film sharing different metallic material.Type: GrantFiled: August 30, 2007Date of Patent: August 9, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Atsuko Sakata, Junichi Wada, Seiichi Omoto, Masaaki Hatano, Soichi Yamashita, Kazuyuki Higashi, Naofumi Nakamura, Masaki Yamada, Kazuya Kinoshita, Tomio Katata, Masahiko Hasunuma
-
Patent number: 7791202Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.Type: GrantFiled: January 24, 2008Date of Patent: September 7, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Atsuko Sakata, Junichi Wada, Seiichi Omoto, Masaaki Hatano, Soichi Yamashita, Kazuyuki Higashi, Naofumi Nakamura, Masaki Yamada, Kazuya Kinoshita, Tomio Katata, Masahiko Hasunuma
-
Publication number: 20080272494Abstract: A semiconductor device is provided, including: a first barrier metal film provided by a PVD process in a recess formed in at least one insulating film, and containing at least one metal element belonging to any of the groups 4-A, 5-A, and 6-A; a second barrier metal film continuously provided by at least one of CVD and ALD processes on the first barrier metal film without being opened to atmosphere, and containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A; a third barrier metal film continuously provided by the PVD process on the second barrier metal film without being opened to the atmosphere, and containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A; and a first Cu film continuously provided on the third barrier metal film without being opened to the atmosphere and thereafter heated.Type: ApplicationFiled: July 8, 2008Publication date: November 6, 2008Applicant: Kabushiki Kaisha ToshibaInventors: Seiichi Omoto, Tomio Katata, Kazuyuki Higashi, Hitomi Yamaguchi, Hirokazu Ezawa, Atsuko Sakata
-
Publication number: 20080261398Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.Type: ApplicationFiled: January 24, 2008Publication date: October 23, 2008Inventors: Atsuko Sakata, Junichi Wada, Seiichi Omoto, Masaaki Hatano, Soichi Yamashita, Kazuyuki Higashi, Naofumi Nakamura, Masaki Yamada, Kazuya Kinoshita, Tomio Katata, Masahiko Hasunuma
-
Patent number: 7399706Abstract: There is here disclosed a manufacturing method of a semiconductor device, comprising providing a first film by a PVD process in a recess formed in at least one insulating film, the first film containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A, continuously providing a second film by at least one of CVD and ALD processes on the first film without opening to atmosphere, the second film containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A, continuously providing a third film by the PVD process on the second film without opening to the atmosphere, the third film containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A, continuously providing a first Cu film on the third film without opening to the atmosphere, and heating the Cu film.Type: GrantFiled: January 25, 2005Date of Patent: July 15, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Seiichi Omoto, Tomio Katata, Kazuyuki Higashi, Hitomi Yamaguchi, Hirokazu Ezawa, Atsuko Sakata
-
Publication number: 20080122102Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.Type: ApplicationFiled: January 24, 2008Publication date: May 29, 2008Inventors: Atsuko Sakata, Junichi Wada, Seiichi Omoto, Masaaki Hatano, Soichi Yamashita, Kazuyuki Higashi, Naofumi Nakamura, Masaki Yamada, Kazuya Kinoshita, Tomio Katata, Masahiko Hasunuma
-
Publication number: 20080099921Abstract: A semiconductor device includes a semiconductor substrate including an impurity diffusion region within an upper surface thereof, an insulating film formed on an upper surface of the impurity diffusion region, and a contact plug formed in the insulating film so that the contact plug contacts the impurity diffusion region. The contact plug includes a first conductor layer contacting the upper surface of the impurity diffusion region and a second conductor layer formed on the first conductor layer including copper (Cu) or copper alloy layers, and the first conductor layer including a material which suppresses diffusion of the copper of the second conductor layer to the semiconductor substrate.Type: ApplicationFiled: November 1, 2007Publication date: May 1, 2008Applicant: KABUSHIKI KAISHA TOSHIBAInventor: Tomio KATATA
-
Publication number: 20080090410Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a first metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, oxidizing at least part of the first metal film with oxidizing species remaining in the insulating film, and forming a second metal film, which includes any of a high melting point metal and a noble metal, on the first metal film, the first metal film and the second metal film sharing different metallic material.Type: ApplicationFiled: August 30, 2007Publication date: April 17, 2008Inventors: Atsuko Sakata, Junichi Wada, Seiichi Omoto, Masaaki Hatano, Soichi Yamashita, Kazuyuki Higashi, Naofumi Nakamura, Masaki Yamada, Kazuya Kinoshita, Tomio Katata, Masahiko Hasunuma
-
Publication number: 20080083990Abstract: A semiconductor device including a copper layer, an aluminum containing layer, and a barrier metal layer having a laminated structure of a titanium layer and a titanium oxide layer formed between the copper layer and the aluminum containing layer.Type: ApplicationFiled: August 23, 2007Publication date: April 10, 2008Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Akitsugu Hatazaki, Jota Fukuhara, Tomio Katata, Junichi Wada
-
Patent number: 7351656Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.Type: GrantFiled: January 20, 2006Date of Patent: April 1, 2008Assignee: Kabushiki Kaihsa ToshibaInventors: Atsuko Sakata, Junichi Wada, Seiichi Omoto, Masaaki Hatano, Soichi Yamashita, Kazuyuki Higashi, Naofumi Nakamura, Masaki Yamada, Kazuya Kinoshita, Tomio Katata, Masahiko Hasunuma
-
Publication number: 20080001298Abstract: A semiconductor device includes a first conductive layer including a first upper surface, an insulating layer formed on the first conductive layer and having a hole which is adjacent to the first conductive layer and penetrating the insulating layer, the hole having an upper part and a lower part, a second conductive layer formed along an inner surface of the lower part of the hole and in electrical contact with the first conductive layer, and a third conductive layer formed in an inner surface of the upper part of the hole and inside the second conductive layer in the lower part of the hole and in electrical contact with the second conductive layer.Type: ApplicationFiled: June 27, 2007Publication date: January 3, 2008Applicant: Kabushiki Kaisha ToshibaInventors: Shuichi Nakamura, Jota Fukuhara, Tomio Katata
-
Publication number: 20060214305Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.Type: ApplicationFiled: January 20, 2006Publication date: September 28, 2006Inventors: Atsuko Sakata, Junichi Wada, Seiichi Omoto, Masaaki Hatano, Soichi Yamashita, Kazuyuki Higashi, Naofumi Nakamura, Masaki Yamada, Kazuya Kinoshita, Tomio Katata, Masahiko Hasunuma
-
Publication number: 20050272258Abstract: According to one aspect of the present invention, provided is a method of manufacturing a semiconductor device, including: forming a first metal film on a substrate having a recessed portion in a surface thereof, by a plating method so as to bury the first metal film in at least part of the recessed portion; forming a second metal film on the first metal film by a film deposition method different from the plating method, the second metal film including, as a main component, a metal that is a main component of the first metal film and containing an impurity whose concentration is lower than concentration of an impurity contained in the first metal film; heat-treating the first and second metal films; and removing the first and second metal films except portions buried in the recessed portion.Type: ApplicationFiled: June 3, 2005Publication date: December 8, 2005Inventors: Toshiyuki Morita, Hiroshi Toyoda, Yoshitaka Matsui, Fumitoshi Ikegaya, Atsuko Sakata, Tomio Katata, Seiichi Omoto
-
Patent number: 6946387Abstract: A method of manufacturing semiconductor device which comprises the steps of forming an insulating film on an Si substrate provided with a wiring layer, forming a contact hole connected to the wiring layer and a wiring groove in the insulating film, filling the contact hole with an Si film, successively forming an Al film and a Ti film all over the substrate, performing a heat treatment thereby to substitute the Al film for the Ti film, and to allow the Si film to be absorbed by the Ti film, whereby filling the contact hole and wiring groove with the Al film, and removing a Ti/Ti silicide which is consisting of Ti silicide formed through the absorption of the Si film by the Ti film and a superfluous Ti, whereby filling the contact hole with an Al plug and filling the wiring groove with an Al wiring.Type: GrantFiled: August 29, 2003Date of Patent: September 20, 2005Assignee: Kabushiki Kaisha ToshibaInventors: Junichi Wada, Atsuko Sakata, Tomio Katata, Takamasa Usui, Masahiko Hasunuma, Hideki Shibata, Hisashi Kaneko, Nobuo Hayasaka, Katsuya Okumura
-
Publication number: 20050186793Abstract: There is here disclosed a manufacturing method of a semiconductor device, comprising providing a first film by a PVD process in a recess formed in at least one insulating film, the first film containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A, continuously providing a second film by at least one of CVD and ALD processes on the first film without opening to atmosphere, the second film containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A, continuously providing a third film by the PVD process on the second film without opening to the atmosphere, the third film containing at least one metal element belonging to any one of the groups 4-A, 5-A, and 6-A, continuously providing a first Cu film on the third film without opening to the atmosphere, and heating the Cu film.Type: ApplicationFiled: January 25, 2005Publication date: August 25, 2005Inventors: Seiichi Omoto, Tomio Katata, Kazuyuki Higashi, Hitomi Yamaguchi, Hirokazu Ezawa, Atsuko Sakata
-
Publication number: 20050148177Abstract: A method and an apparatus for manufacturing a semiconductor device are provided capable of making a barrier metal layer having a thin film and providing a sufficient barrier property with a low manufacturing cost. The method includes forming a barrier metal layer 5 on predetermined positions on a Cu wiring layer 3 formed on a semiconductor substrate by a CVD method or an ALD method, and forming an Al layer 6 on the barrier metal layer 5 without exposing it to the atmosphere.Type: ApplicationFiled: November 12, 2004Publication date: July 7, 2005Applicant: Kabushiki Kaisha ToshibaInventors: Kazuhiro Murakami, Tomio Katata, Seiichi Omoto
-
Patent number: 6768202Abstract: Disclosed is a semiconductor device including a semiconductor substrate, an interlayer insulating film formed on one main surface of the semiconductor substrate and having a concave portion, a liner film formed on the inner surface of the concave portion, a wiring layer formed inside the concave portion with the liner film interposed therebetween, and an agglomeration suppressing material contained in the wiring layer for suppressing agglomeration of the material constituting the wiring layer. The agglomeration suppressing material is selected from the group consisting of O, N, Nb, Ta, Ti, W and C.Type: GrantFiled: July 3, 2002Date of Patent: July 27, 2004Assignee: Kabushiki Kaisha ToshibaInventors: Yasushi Oikawa, Junichi Wada, Tomio Katata
-
Patent number: 6720253Abstract: A semiconductor device is constituted by embedding an Al wiring layer in a second object formed on a interlayer-insulating film on one principal plane of a semiconductor substrate and connecting with an Al wiring formed on the substrate and at least, an Nb liner film and NbAl alloy film are formed between the second object and the Al wiring layer.Type: GrantFiled: September 4, 2001Date of Patent: April 13, 2004Assignee: Kabushiki Kaisha ToshibaInventors: Junichi Wada, Yasushi Oikawa, Tomio Katata