Patents by Inventor Tomiya Yasunaka

Tomiya Yasunaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon carbide fabrication
    Patent number: 5993770
    Abstract: An SiC film having an excellent strength and thermal characteristics. The SiC film is prepared by a CVD process (i.e. CVD-SiC fabrication) and has a thermal conductivity along the direction of the SiC crystal growth between 100 and 300 W/m.multidot.K, and an average grain diameter of the internal structure between 4 to 12 .mu.m. It is preferred that the ratio of the thermal conductivity along the direction of the SiC crystal growth to the thermal conductivity in the perpendicular direction is in a range of 1.10 to 1.40.
    Type: Grant
    Filed: August 26, 1998
    Date of Patent: November 30, 1999
    Assignee: Tokai Carbon Company, Ltd.
    Inventors: Akihiro Kuroyanagi, Tomiya Yasunaka, Yuji Ushijima, Kenichi Kanai