Abstract: The present disclosure relates to a photodetection device and an electronic apparatus that allow for reducing surface reflection from an on-chip microlens and suppressing deterioration of image quality. Provided is a photodetection device including: a plurality of pixels that have photoelectric conversion units; on-chip microlenses that are formed in such a way as to correspond to the individual pixels; and an antireflection film that is formed on a surface of the on-chip microlens, in which the antireflection film is constituted by a stacking of: a first inorganic film that is formed by a metal oxide film; and a second inorganic film that is formed on a surface of the first inorganic film and has a lower refractive index than the first inorganic film. The present disclosure can be applied to, for example, a CMOS solid-state imaging device.

Abstract: A highly functional photoelectric conversion element is provided.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes a semiconductor substrate, a first photoelectric converter, a second photoelectric converter, a first insulating layer, and an optical filter. The first photoelectric converter detects visible light and photoelectrically converts the visible light. The second photoelectric converter detects infrared light and photoelectrically converts the infrared light. The first insulating layer is provided between the first photoelectric converter and the second photoelectric converter. The optical filter is embedded in the first insulating layer and has a transmission band in an infrared light range. The first photoelectric converter includes a second insulating layer including a material having a higher hydrogen sealing property and a higher water sealing property than a material of the first insulating layer.

Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The semiconductor layer is provided between the first electrode and second electrode and the photoelectric conversion layer. The semiconductor layer has a first layer and a second layer stacked therein in order from the photoelectric conversion layer side. The second layer has an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band.

Abstract: A multilayer film according to an embodiment of the present disclosure includes: semiconductor layers; and dielectric layers. In each of the semiconductor layers, a value of an optical constant k1 for light having a wavelength in a visible light region among optical constants k is larger than a value of an optical constant k2 for light having a wavelength in an infrared light region. The optical constants k each serves as an extinction coefficient that includes an imaginary part of a complex refractive index. The semiconductor layers and the dielectric layers are alternately stacked and the multilayer film has an optical distance of 0.3 ?m or more and 10 ?m or less in a stack direction and absorbs at least a portion of visible light and transmits infrared light.

Abstract: The present invention is to provide a magnetron sputtering technique for forming a film having an even film thickness distribution for a long period of time. A magnetron sputtering apparatus of the present invention includes a vacuum chamber, a cathode part provided in the vacuum chamber, the cathode part holding a target on the front side thereof and having a backing plate to hold a plurality of magnets on the backside thereof, and a direct-current power source that supplies direct-current power to the cathode part. A plurality of control electrodes, which independently controls potentials, is provided in a discharge space on the side of the target with respect to the backing plate.

Abstract: The present invention is to provide a magnetron sputtering technique for forming a film having an even film thickness distribution for a long period of time. A magnetron sputtering apparatus of the present invention includes a vacuum chamber, a cathode part provided in the vacuum chamber, the cathode part holding a target on the front side thereof and having a backing plate to hold a plurality of magnets on the backside thereof, and a direct-current power source that supplies direct-current power to the cathode part. A plurality of control electrodes, which independently controls potentials, is provided in a discharge space on the side of the target with respect to the backing plate.