Abstract: A first representation of an integrated circuit undergoing processing is transformed into a second representation. The second representation including additional dopants relative to the first representation. The transformation generates a three-dimensional dopant distribution from adding a first dopant under a first set of process conditions with a mask, by combining the two-dimensional lateral profile of the dopant with the one-dimensional depth profile of the dopant. The one-dimensional depth profile of the dopant is retrieved from a database storing selected results from earlier process simulation of the first addition of the first dopant under the first set of process conditions. The two-dimensional lateral dopant profile from adding the first dopant under the first set of process conditions with a first mask corresponding to the first dopant, is generated by convolving the mask with a lateral diffusion function, or from at least one solution to the 2D diffusion equation without convolution.

Abstract: A first representation of an integrated circuit undergoing processing is transformed into a second representation. The second representation including additional dopants relative to the first representation. The transformation generates a three-dimensional dopant distribution from adding a first dopant under a first set of process conditions with a mask, by combining the two-dimensional lateral profile of the dopant with the one-dimensional depth profile of the dopant. The one-dimensional depth profile of the dopant is retrieved from a database storing selected results from earlier process simulation of the first addition of the first dopant under the first set of process conditions. The two-dimensional lateral dopant profile from adding the first dopant under the first set of process conditions with a first mask corresponding to the first dopant, is generated by convolving the mask with a lateral diffusion function, or from at least one solution to the 2D diffusion equation without convolution.

Abstract: A sensor integrated on a semiconductor device (1), in particular a flow sensor, comprises a measuring element (2) on a membrane (5). In order to prevent a buckling of the membrane (5) a tensile coating (9) is applied. The coating covers the membrane, but it preferably leaves all the active electronic components integrated on the semiconductor chip (1) uncovered, such that their electrical properties are not affected.

Abstract: A sensor integrated on a semiconductor device (1), in particular a flow sensor, comprises a measuring element (2) on a membrane (5). In order to prevent a buckling of the membrane (5) a tensile coating (9) is applied. The coating covers the membrane, but it preferably leaves all the active electronic components integrated on the semiconductor chip (1) uncovered, such that their electrical properties are not affected.