Abstract: The invention is related to an electric field proximity detection system suitable for use as a touch sensitive keyboard or to be used in close proximity without direct contact. In an embodiment of a circuit useful in the system, an AC signal is coupled to a single electrode functioning as an antenna radiating an electric field through a high impedance circuit. A conductive object in close proximity disturbs the field causing a voltage change across nodes of the high impedance circuit that is compared by a detector circuit that generates a DC output indicating an object is close to the electrode. In another embodiment, the circuit couples to an analog multiplexer to control a plurality of electrodes. In another embodiment, a row and column address scheme couples a plurality of electrodes and increases resolution without substantially increasing complexity. The circuits may be integrated in a semiconductor to reduce size and cost.

Abstract: The present invention relates to structures and methods that reduce ESD damage to electronic devices. In an embodiment, the structure is a parallel plate dissipative capacitor formed by sandwiching a dissipative dielectric layer between two conductive layers in series to the electronic device. The dissipative dielectric layer includes a nonconductive dielectric doped with a voltage dependent resistive material that defines a conductive threshold voltage. The structure functions as a voltage dependent resistor in response to an applied voltage such as an ESD surge voltage exceeding the defined conductive threshold voltage and dissipates the applied voltage into thermal energy before it can reach the electronic device and cause damage. The dissipative dielectric layer restores to a dielectric and the structure functions as a capacitor when the excess voltage is depleted that is drops below the defined conductive threshold voltage.

Abstract: An off-line switching power supply for generating negative voltages without a transformer, comprising a line voltage connection for receiving a line voltage, an inductor having a first terminal and a second terminal, a power MOSFET having a drain and a source, the drain electrically connected to the first terminal of the inductor, the drain electrically connected to the first terminal of the inductor, the source electrically connected to the voltage and the second terminal of the inductor providing a negative output voltage.

Abstract: An ion source (10) for an ion implanter is provided, comprising: (i) an ionization chamber (14) defined at least partially by chamber walls (12), and having an inlet (45) into which a sputtering gas may be injected and an aperture (18) through which an ion beam (B) may be extracted: (ii) an ionizing electron source (44) for ionizing the sputtering gas to form a sputtering plasma; and (iii) a sputterable repeller (100). The sputterable repeller both (a) repels electrons emitted by the electron source, and (b) provides a source of sputtered material that can be ionized by the electron source. the sputterable repeller (100) comprises a slug (108) of sputterable material, and further comprises mounting structure (102, 104) for removably mounting the slug within the ionization chamber (14), so that the slug is made removably detachable from the mounting structure.

Abstract: An off-line switching power supply for generating negative voltages without a transformer, comprising a line voltage connection for receiving a line voltage, an inductor having a first terminal and a second terminal, a power MOSFET having a drain and a source, the drain electrically connected to the first terminal of the inductor, the drain electrically connected to the first terminal of the inductor, the source electrically connected to the voltage and the second terminal of the inductor providing a negative output voltage.

Abstract: An ion source (10) for an ion implanter is provided, comprising: (i) an ionization chamber (14) defined at least partially by chamber walls (12), and having an inlet (45) into which a sputtering gas may be injected and an aperture (18) through which an ion beam (B) may be extracted; (ii) an ionizing electron source (44) for ionizing the sputtering gas to form a sputtering plasma; and (iii) a sputterable repeller (100). The sputterable repeller both (a) repels electrons emitted by the electron source, and (b) provides a source of sputtered material that can be ionized by the electron source. The sputterable repeller (100) comprises a slug (108) of sputterable material, and further comprises mounting structure (102, 104) for removably mounting the slug within the ionization chamber (14), so that the slug is made removably detachable from the mounting structure.

Abstract: An ion source (10) for an ion implanter is provided, comprising: (i) an ionization chamber (14) defined at least partially by chamber walls (12), and having an inlet (45) into which a sputtering gas may be injected and an aperture (18) through which an ion beam (B) may be extracted; (ii) an ionizing electron source (44) for ionizing the sputtering gas to form a sputtering plasma; and (iii) a sputterable repeller (100). The sputterable repeller both (a) repels electrons emitted by the electron source, and (b) provides a source of sputtered material that can be ionized by the electron source. The sputterable repeller (100) comprises a slug (108) of sputterable material, and further comprises mounting structure (102, 104) for removably mounting the slug within the ionization chamber (14), so that the slug is made removably detachable from the mounting structure.