Abstract: The present invention relates generally to a deposition apparatus for semiconductor processing. More specifically, embodiments of the present invention relate to a gas manifold valve cluster and deposition apparatus. In some embodiments of the present invention a gas manifold valve cluster and system are provided that promotes reduced length and volumes of gas lines that will be exposed to atmosphere during cleaning which minimizes the time required to perform process chamber maintenance and therefore increase the productivity of the process chamber. In other embodiments a gas manifold valve cluster and ALD deposition apparatus are provided.

Abstract: The present invention relates generally to a deposition apparatus for semiconductor processing. More specifically, embodiments of the present invention relate to a deposition apparatus having a reduced reaction zone volume. In some embodiments a deposition apparatus is provided with a process chamber having a raised reaction zone. Other embodiments of the present invention provide a deposition apparatus with a process chamber having a vertical baffle ring. Embodiments of the present invention provide a reduced reaction zone or volume which promotes uniform gas flow pattern and faster gas exchange.