Abstract: A power MOSFET package is disclosed. The power MOSFET package includes a leadframe having first and second die pads insulated one from the other, the first die pad being coupled to a first drain lead and the second die pad being coupled to a second drain lead. A first MOSFET device has a drain contact coupled-to the first die pad, a gate contact coupled to a first gate lead, and a source contact coupled to the second die pad. A second MOSFET device has a drain contact coupled to the second die pad, a gate contact coupled to a second gate lead, and a source contact coupled to a source lead. An encapsulant substantially encapsulates the leadframe, the first and second MOSFET devices and portions of the first and second gate leads, the first and second drain leads, and the source lead.