Abstract: An infrared sensor including: a detection substrate that includes a first substrate in which infrared detection elements are arranged in a lattice shape and first terminals each of which is associated with one of the infrared detection elements are arranged; a readout substrate that includes a second substrate in which second terminals each of which is associated with one of the first terminals are arranged and a readout circuit that reads an electrical signal based on infrared light detected by each one of the infrared detection elements is formed; and bumps that electrically connect each one of the first terminals to one of the second terminals associated with the one of the first terminals, in which at least one of the first terminals, the second terminals, or the bumps is partially arranged at a position between the infrared detection elements that are adjacent in a top view.

Abstract: Disclosed is a bolometer type infrared detector comprising: a substrate, a bolometer film comprising semiconducting carbon nanotubes, and two electrodes spaced from each other and connected to the bolometer film, wherein at least one of the two electrodes is formed of a metal alloy comprising at least two metals selected from the group consisting of Li, Be, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Ba, La, Hf, Ta, Ir, Pt, Au, and Bi.

Abstract: A data generation system includes a division unit, an extraction unit, an output unit, an input unit, and a generation unit. The division unit divides each of the plurality of sentences into tokens. The extraction unit extracts a sentence including candidates for a token to be combined as a word from a plurality of sentences based on characteristics of tokens included in the plurality of sentences. The output unit outputs a sentence including the candidates for the token to be combined. The input unit receives, as an input, an instruction to combine the candidates for the token to be combined included in the sentence output by the output unit. The generation unit generates a language resource including a word obtained by combining the candidates for the token to be combined based on the input.

Abstract: An object of the present invention is to provide a bolometer thin film and an infrared sensor having a high TCR value, and a method for manufacturing the same. According to the present invention, a bolometer material which is a thin film comprising semiconducting carbon nanotubes and a negative thermal expansion material, and an infrared sensor comprising the bolometer material are provided.

Abstract: An example object of the present invention is to provide a bolometer-type detector capable of reducing heat transfer between pixels. A bolometer-type detector according to an example aspect of the present invention includes a plurality of pixels, and at least includes: a substrate, a heat insulating layer provided on the substrate, bolometer films provided on individual pixels on the heat insulating layer, and a wiring for signal output connected to contact electrodes provided in contact with the bolometer films, wherein the wiring for signal output is disposed in a layer different from the bolometer films, and the heat insulating layer between adjacent pixels is removed at least partially in the depth direction and in a region of a length of 50% or longer and a width of 100 nm or wider of a closed curve that surrounds each bolometer film.

Abstract: A bolometer having a high TCR, a bolometer array, and a method for manufacturing the same are provided. The present invention is related to a bolometer including a substrate, a positively charged adhesive layer provided on the substrate, and a bolometer film comprising semiconducting carbon nanotubes and a negative thermal expansion material, both of which are negatively charged, and are electrostatically adsorbed to the adhesive layer.

Abstract: An example objective of the present invention is to provide a bolometer capable of reducing its manufacturing cost. A bolometer according to an example aspect of the present invention includes: a substrate; and an infrared detection unit comprising a bolometer film, wherein the infrared detection unit is held on the substrate with a gap therebetween by a supporting unit, wherein the bolometer film is a carbon nanotube film includes semiconducting carbon nanotubes in an amount of 67% by mass or more of the total amount of carbon nanotubes, and the thickness of the carbon nanotube film is in the range of 10 nm to 1 ?m, and the density of the carbon nanotube film is 0.3 g/cm3 or more.

Abstract: An analysis system is configured to include an extraction unit, an output unit, an acquisition unit, and a dictionary generation unit. The extraction unit extracts, as a token pair, two tokens that consecutively occur in a sentence separated using the basic dictionary. Regarding a token in which two tokens included in a token pair are connected, the output unit displays a selection screen for selecting any of registering with a dictionary, registering with an on-hold list for holding registration with the dictionary, and not registering with the dictionary. The acquisition unit acquires a selection result for the selection screen. The dictionary generation unit generates an on-hold list with which the token pair whose selection result indicates on-hold is registered as a token, and a dictionary with which the token pair whose selection result indicates registering is registered as a connected token.

Abstract: In order to enable simple removal of a substrate used for manufacturing a semiconductor element, a manufacturing method includes forming a graphene layer on a substrate portion formed of a semiconductor, forming an element portion on the graphene layer, the element portion including a semiconductor layer directly formed on the graphene layer, which takes over crystal information relating to the substrate portion when the semiconductor layer is formed on the substrate portion without intermediation of the graphene layer, and performing cutting-off between the substrate portion and the element portion at the graphene layer.

Abstract: An example object of the present invention is to provide a bolometer-type detector capable of reducing heat transfer between pixels. A bolometer-type detector according to an example aspect of the present invention includes a plurality of pixels, and at least includes: a substrate, a heat insulating layer provided on the substrate, bolometer films provided on individual pixels on the heat insulating layer, and a wiring for signal output connected to contact electrodes provided in contact with the bolometer films, wherein the wiring for signal output is disposed in a layer different from the bolometer films, and the heat insulating layer between adjacent pixels is removed at least partially in the depth direction and in a region of a length of 50% or longer and a width of 100 nm or wider of a closed curve that surrounds each bolometer film.

Abstract: It is an object of the present invention to provide a stretch-formed product having a high conductivity. A stretch-formed product of the present embodiment includes a fibrous carbon nanohorn aggregate in which single-walled carbon nanohorns are radially aggregated and fibrously connected, and a resin.

Abstract: An example objective of the present invention is to provide a bolometer capable of reducing its manufacturing cost. A bolometer according to an example aspect of the present invention includes: a substrate; a heat insulating layer formed on the substrate; and a bolometer film formed on the heat insulating layer; wherein the bolometer film is a carbon nanotube film including semiconducting carbon nanotubes in an amount of 67% by mass or more of the total amount of carbon nanotubes, and the thickness of the carbon nanotube film is in the range of 10 nm to 1 ?m, and the density of the carbon nanotube film is 0.3 g/cm3 or more.

Abstract: An example objective of the present invention is to provide a bolometer capable of reducing its manufacturing cost. A bolometer according to an example aspect of the present invention includes: a substrate; and an infrared detection unit comprising a bolometer film, wherein the infrared detection unit is held on the substrate with a gap therebetween by a supporting unit, wherein the bolometer film is a carbon nanotube film includes semiconducting carbon nanotubes in an amount of 67% by mass or more of the total amount of carbon nanotubes, and the thickness of the carbon nanotube film is in the range of 10 nm to 1 ?m, and the density of the carbon nanotube film is 0.3 g/cm3 or more.

Abstract: Provided is a texture structure manufacturing method with which a texture structure can be obtained simply. The texture structure manufacturing method comprises: growing a layer including a randomly distributed nanostructure on a major surface of a base material; forming a light-scattering body having the nanostructure embedded therein; and exposing a surface of the light-scattering body by removing a part or all of the base material and the layer including the nanostructure.

Abstract: An infrared sensor including: a detection substrate that includes a first substrate in which infrared detection elements are arranged in a lattice shape and first terminals each of which is associated with one of the infrared detection elements are arranged; a readout substrate that includes a second substrate in which second terminals each of which is associated with one of the first terminals are arranged and a readout circuit that reads an electrical signal based on infrared light detected by each one of the infrared detection elements is formed; and bumps that electrically connect each one of the first terminals to one of the second terminals associated with the one of the first terminals, in which at least one of the first terminals, the second terminals, or the bumps is partially arranged at a position between the infrared detection elements that are adjacent in a top view.

Abstract: In order to enable simple removal of a substrate used for manufacturing a semiconductor element, a manufacturing method includes forming a graphene layer on a substrate portion formed of a semiconductor, forming an element portion on the graphene layer, the element portion including a semiconductor layer directly formed on the graphene layer, which takes over crystal information relating to the substrate portion when the semiconductor layer is formed on the substrate portion without intermediation of the graphene layer, and performing cutting-off between the substrate portion and the element portion at the graphene layer.

Abstract: Provided is a texture structure manufacturing method with which a texture structure can be obtained simply. The texture structure manufacturing method comprises: growing a layer including a randomly distributed nanostructure on a major surface of a base material; forming a light-scattering body having the nanostructure embedded therein; and exposing a surface of the light-scattering body by removing a part or all of the base material and the layer including the nanostructure.