Patents by Inventor Tomoaki Hatayama
Tomoaki Hatayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220376065Abstract: A silicon carbide semiconductor device includes a silicon carbide substrate, a first electrode, and a second electrode. The silicon carbide substrate has a first main surface, a second main surface, a first impurity region, a second impurity region, and a third impurity region. The first electrode is in contact with each of the second impurity region and the third impurity region on the first main surface. The second electrode is in contact with the first impurity region on the second main surface. The second impurity region includes a first region and a second region disposed between the first region and the second main surface and in contact with the first region. An impurity concentration of the first region is more than or equal to 6×1016 cm?3.Type: ApplicationFiled: October 9, 2020Publication date: November 24, 2022Inventors: Tomoaki HATAYAMA, Takeyoshi MASUDA, Shinsuke HARADA
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Patent number: 10612160Abstract: An epitaxial wafer includes a silicon carbide film having a first main surface. A groove portion is formed in the first main surface. The groove portion extends in one direction along the first main surface. Moreover, a width of the groove portion in the one direction is twice or more as large as a width of the groove portion in a direction perpendicular to the one direction. Moreover, a maximum depth of the groove portion from the first main surface is not more than 10 nm.Type: GrantFiled: March 23, 2018Date of Patent: April 7, 2020Assignee: Sumitomo Electric Industries, Ltd.Inventors: Taro Nishiguchi, Jun Genba, Hironori Itoh, Tomoaki Hatayama, Hideyuki Doi
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Patent number: 10472736Abstract: An epitaxial wafer includes a silicon carbide film having a first main surface. A groove portion is formed in the first main surface. The groove portion extends in one direction along the first main surface. Moreover, a width of the groove portion in the one direction is twice or more as large as a width of the groove portion in a direction perpendicular to the one direction. Moreover, a maximum depth of the groove portion from the first main surface is not more than 10 nm.Type: GrantFiled: March 23, 2018Date of Patent: November 12, 2019Assignee: Sumitomo Electric Industries, Ltd.Inventors: Taro Nishiguchi, Jun Genba, Hironori Itoh, Tomoaki Hatayama, Hideyuki Doi
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Patent number: 10192967Abstract: A silicon carbide semiconductor device includes a silicon carbide substrate, a gate oxide film, and a gate electrode. A trench is provided in the main surface to have a side surface and a bottom portion. A contact point between a first side surface portion and a second side surface portion is located in a third impurity region. An angle formed by the first side surface portion and a straight line extending through the contact point and parallel to the main surface is smaller than an angle formed by the second side surface portion and a boundary surface between a first impurity region and a second impurity region. A thickness of a portion of the gate oxide film on the contact point between the main surface and the first side surface portion is larger than a thickness of a portion of the gate oxide film on the second impurity region.Type: GrantFiled: April 9, 2015Date of Patent: January 29, 2019Assignee: Sumitomo Electric Industries, Ltd.Inventors: Yu Saitoh, Tomoaki Hatayama, Takeyoshi Masuda
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Publication number: 20180209064Abstract: An epitaxial wafer includes a silicon carbide film having a first main surface. A groove portion is formed in the first main surface. The groove portion extends in one direction along the first main surface. Moreover, a width of the groove portion in the one direction is twice or more as large as a width of the groove portion in a direction perpendicular to the one direction. Moreover, a maximum depth of the groove portion from the first main surface is not more than 10 nm.Type: ApplicationFiled: March 23, 2018Publication date: July 26, 2018Inventors: Taro Nishiguchi, Jun Genba, Hironori Itoh, Tomoaki Hatayama, Hideyuki Doi
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Patent number: 9957641Abstract: An epitaxial wafer includes a silicon carbide film having a first main surface. A groove portion is formed in the first main surface. The groove portion extends in one direction along the first main surface. Moreover, a width of the groove portion in the one direction is twice or more as large as a width of the groove portion in a direction perpendicular to the one direction. Moreover, a maximum depth of the groove portion from the first main surface is not more than 10 nm.Type: GrantFiled: July 22, 2015Date of Patent: May 1, 2018Assignee: Sumitomo Electric Industries, Ltd.Inventors: Taro Nishiguchi, Jun Genba, Hironori Itoh, Tomoaki Hatayama, Hideyuki Doi
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Publication number: 20170047415Abstract: A silicon carbide semiconductor device includes a silicon carbide substrate, a gate oxide film, and a gate electrode. A trench is provided in the main surface to have a side surface and a bottom portion. A contact point between a first side surface portion and a second side surface portion is located in a third impurity region. An angle formed by the first side surface portion and a straight line extending through the contact point and parallel to the main surface is smaller than an angle formed by the second side surface portion and a boundary surface between a first impurity region and a second impurity region. A thickness of a portion of the gate oxide film on the contact point between the main surface and the first side surface portion is larger than a thickness of a portion of the gate oxide film on the second impurity region.Type: ApplicationFiled: April 9, 2015Publication date: February 16, 2017Inventors: Yu Saitoh, Tomoaki Hatayama, Takeyoshi Masuda
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Publication number: 20160326668Abstract: An epitaxial wafer includes a silicon carbide film having a first main surface. A groove portion is formed in the first main surface. The groove portion extends in one direction along the first main surface. Moreover, a width of the groove portion in the one direction is twice or more as large as a width of the groove portion in a direction perpendicular to the one direction. Moreover, a maximum depth of the groove portion from the first main surface is not more than 10 nm.Type: ApplicationFiled: July 22, 2015Publication date: November 10, 2016Applicant: Sumitomo Electric Industries, Ltd.Inventors: Taro Nishiguchi, Jun Genba, Hironori Itoh, Tomoaki Hatayama, Hideyuki Doi
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Patent number: 9293549Abstract: A silicon carbide layer includes a first region having a first conductivity type, a second region provided on the first region and having a second conductivity type, and a third region provided on the second region and having the first conductivity type. A trench having an inner surface is formed in the silicon carbide layer. The trench penetrates the second and third regions. The inner surface of the trench has a first side wall and a second side wall located deeper than the first side wall and having a portion made of the second region. Inclination of the first side wall is smaller than inclination of the second side wall.Type: GrantFiled: October 23, 2012Date of Patent: March 22, 2016Assignees: Sumitomo Electric Industries, Ltd., National University Corporation Nara Institute of Science and TechnologyInventors: Takeyoshi Masuda, Tomoaki Hatayama
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Patent number: 9006747Abstract: Provided are a technology that simply forms a particular crystal surface such as a {03-38} surface having high carrier mobility in trench sidewalls and a SiC semiconductor element where most of the trench sidewalls appropriate for a channel member are formed from {03-38} surfaces. A trench structure formed in a (0001) surface or an off-oriented surface of a (0001) surface with an offset angle 8° or lower of SiC is provided. The channel member is in the trench structure. At least 90% of the area of the channel member is a {03-38} surface or a surface that a {03-38} surface offset by an angle from ?8° to 8° in the <1-100> direction. Specifically, the trench sidewalls are finished to {03-38} surfaces by applying a thermal etching to a trench with (0001) surfaces of SiC. Thermal etching is conducted in a chlorine atmosphere above 800° C. with nitrogen gas as the carrier.Type: GrantFiled: August 27, 2012Date of Patent: April 14, 2015Assignee: National University Corporation Nara Institute of Science and TechnologyInventors: Tomoaki Hatayama, Hidenori Koketsu, Yoshihiro Todokoro
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Patent number: 8999854Abstract: On a substrate, a silicon carbide layer provided with a main surface is formed. A mask is formed to cover a portion of the main surface of the silicon carbide layer. The main surface of the silicon carbide layer on which the mask is formed is thermally etched using chlorine-based gas so as to provide the silicon carbide layer with a side surface inclined relative to the main surface. The step of thermally etching is performed in an atmosphere in which the chlorine-based gas has a partial pressure of 50% or smaller.Type: GrantFiled: October 23, 2012Date of Patent: April 7, 2015Assignees: Sumitomo Electric Industries, Ltd., National University Corporation Nara Institute of Science and TechnologyInventors: Takeyoshi Masuda, Tomoaki Hatayama
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Publication number: 20140203300Abstract: Provided are a technology that simply forms a particular crystal surface such as a {03-38} surface having high carrier mobility in trench sidewalls and a SiC semiconductor element where most of the trench sidewalls appropriate for a channel member are formed from {03-38} surfaces. A trench structure formed in a (0001) surface or an off-oriented surface of a (0001) surface with an offset angle 8° or lower of SiC is provided. The channel member is in the trench structure. At least 90% of the area of the channel member is a {03-38} surface or a surface that a {03-38} surface offset by an angle from ?8° to 8° in the <1-100> direction. Specifically, the trench sidewalls are finished to {03-38} surfaces by applying a thermal etching to a trench with (0001) surfaces of SiC. Thermal etching is conducted in a chlorine atmosphere above 800° C. with nitrogen gas as the carrier.Type: ApplicationFiled: August 27, 2012Publication date: July 24, 2014Applicant: NATIONAL UNIVERSITY CORP NARA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Tomoaki Hatayama, Hidenori Koketsu, Yoshihiro Todokoro
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Publication number: 20130023113Abstract: A method for manufacturing a MOSFET includes the steps of: introducing an impurity into a silicon carbide layer; forming a carbon layer in a surface layer portion of the silicon carbide layer having the impurity introduced therein, by selectively removing silicon from the surface layer portion; and activating the impurity by heating the silicon carbide layer having the carbon layer formed therein.Type: ApplicationFiled: July 16, 2012Publication date: January 24, 2013Applicants: NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF SCIENCE AND TECHNOLOGY, Sumitomo Electric Industries, Ltd.Inventors: Takeyoshi Masuda, Tomoaki Hatayama
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Publication number: 20110175111Abstract: Provided is a silicon carbide semiconductor device capable of lowering the contact resistance of an ohmic electrode and achieving high reverse breakdown voltage characteristics. A semiconductor device includes a substrate and a p+ region as an impurity layer. The substrate of the first conductive type (n type) is made of silicon carbide and has a dislocation density of 5×103 cm?2 or less. The p+ region is formed on the substrate, in which the concentration of the conductive impurities having the second conductive type different from the first conductive type is 1×1020 cm3 or more and 5×1021 cm3 or less.Type: ApplicationFiled: August 7, 2009Publication date: July 21, 2011Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD., NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Shin Harada, Hideto Tamaso, Tomoaki Hatayama