Patents by Inventor Tomoaki HIEDA

Tomoaki HIEDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • QUANTUM DOT AND METHOD FOR PRODUCING THE SAME
    Publication number: 20240059966
    Abstract: To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgInxGa1-xSySe1-y or ZnAgInxGa1-xSySe1-y (where 0?x<1 and 0?y?1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in the green wavelength range to the red wavelength range.
    Type: Application
    Filed: October 24, 2023
    Publication date: February 22, 2024
    Applicant: NS MATERIALS INC.
    Inventors: Soichiro NIKATA, Yoko MICHIWAKI, Tomoaki HIEDA, Yuko OGURA, Akio MISHIMA, Vit KALOUSEK
  • Quantum dot and method for producing the same
    Patent number: 11834596
    Abstract: To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgInxGa1-xSySe1-y or ZnAgInxGa1-xSySe1-y (where 0?x<1 and 0?y?1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in the green wavelength range to the red wavelength range.
    Type: Grant
    Filed: July 31, 2020
    Date of Patent: December 5, 2023
    Assignee: NS MATERIALS INC.
    Inventors: Soichiro Nikata, Yoko Michiwaki, Tomoaki Hieda, Yuko Ogura, Akio Mishima, Vit Kalousek
  • QUANTUM DOT AND METHOD FOR PRODUCING THE SAME
    Publication number: 20210363422
    Abstract: To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgInxGa1-xSySe1-y or ZnAgInxGa1-xSySe1-y (where 0?x<1 and 0?y?1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in the green wavelength range to the red wavelength range.
    Type: Application
    Filed: July 31, 2020
    Publication date: November 25, 2021
    Applicant: NS Materials Inc.
    Inventors: Soichiro NIKATA, Yoko MICHIWAKI, Tomoaki HIEDA, Yuko OGURA, Akio MISHIMA, Vit KALOUSEK