Abstract: A method of manufacturing a silicon carbide semiconductor device includes a step of preparing a silicon carbide substrate having a first main surface and a second main surface located opposite to the first main surface, a step of forming a doped region in the silicon carbide substrate by doping the first main surface with an impurity, a step of forming a first protecting film on the doped region at the first main surface, and a step of activating the impurity included in the doped region by annealing with the first protecting film having been formed, the step of forming a first protecting film including a step of disposing a material which will form the first protecting film and in which the concentration of a metal element is less than or equal to 5 ?g/kg on the first main surface.

Abstract: A method of manufacturing a silicon carbide semiconductor device includes a step of preparing a silicon carbide substrate having a first main surface and a second main surface located opposite to the first main surface, a step of forming a doped region in the silicon carbide substrate by doping the first main surface with an impurity, a step of forming a first protecting film on the doped region at the first main surface, and a step of activating the impurity included in the doped region by annealing with the first protecting film having been formed, the step of forming a first protecting film including a step of disposing a material which will form the first protecting film and in which the concentration of a metal element is less than or equal to 5 ?g/kg on the first main surface.

Abstract: In an absorbent article 1 including a liquid-permeable topsheet 2 positioned at a surface that contacts with a human body; a non liquid-permeable backsheet 3 positioned at a surface opposite to the topsheet 2; and an absorbent body 4 provided between the topsheet 2 and the backsheet 3, a three-dimensional gather 6 is formed by a folding portion 32 at which the backsheet 3 is folded up to the topsheet 2 side along both side portions in a longitudinal direction of the absorbent body 4, and a nonwoven fabric at least partially adhered to this folding portion 32. The three-dimensional gather 6 has a free end 62 structured with the nonwoven fabric.

Abstract: In an absorbent article 1 including a liquid-permeable topsheet 2 positioned at a surface that contacts with a human body; a non liquid-permeable backsheet 3 positioned at a surface opposite to the topsheet 2; and an absorbent body 4 provided between the topsheet 2 and the backsheet 3, a three-dimensional gather 6 is formed by a folding portion 32 at which the backsheet 3 is folded up to the topsheet 2 side along both side portions in a longitudinal direction of the absorbent body 4, and a nonwoven fabric at least partially adhered to this folding portion 32. The three-dimensional gather 6 has a free end 62 structured with the nonwoven fabric.

Abstract: This invention provides a leakage-free absorbent pad for men. The absorbent pad for men of this invention includes a liquid permeable top sheet 1, a back sheet 2, an absorbent member 3 arranged between the both sheets, and a pair of liquid impermeable gather sheets facing each other on the top sheet 1, wherein a liquid permeable auxiliary sheet 10 is provided to extend from a side of one gather sheet 5 toward the other gather sheet 4 between the top sheet 1 and the gather sheets 4 and 5, and an opening 6 for inserting male genitals is formed by the auxiliary sheet and the other gather sheet 4.

Abstract: Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate and including a bottom electrode, a dielectric film provided on the bottom electrode, and a top electrode provided on the dielectric film, a mask film provided on the top electrode and used as a mask when a pattern of the capacitor is formed, wherein an inclination of a side surface of the mask film is gentler than an inclination of a side surface of the top electrode and an inclination of a side surface of the dielectric film.

Abstract: An APC is provided in a five-axis controlling vertical machining center. A spindle head is movable in three mutually transverse axes directions to a workpiece. A table disposed below swings to be positioned and is directed upwardly and indexed. A pallet setup base is provided outside a machining area. A pallet change arm has pallet grip portions for gripping and releasing the pallets. The arm makes a swivel motion and makes an ascending and descending motion. Thus, the pallet is transferred between the table and the pallet setup base and is received and discharged to the table and the pallet setup base.

Abstract: An APC is provided in a five-axis controlling vertical machining center. A spindle head is movable in three mutually transverse axes directions to a workpiece. A table disposed below swings to be positioned and is directed upwardly and indexed. A pallet setup base is provided outside a machining area. A pallet change arm has pallet grip portions for gripping and releasing the pallets. The arm makes a swivel motion and makes an ascending and descending motion. Thus, the pallet is transferred between the table and the pallet setup base and is received and discharged to the table and the pallet setup base.

Abstract: A method of measuring a semiconductor device in forming a capacitor by successively laminating a dielectric film and an opposed electrode above an upper face of a charge storing electrode a surface of which is formed in an irregular shaper, including the steps of forming the irregular shape of the charge storing electrode and measuring an area of the charge storing electrode which is to constitute an effective area of the capacitor by an atomic force microscope.

Abstract: A method of cleaning semiconductor devices which removes or transmutes the contaminants sticking on sidewalls of a pattern or a trench is formed is disclosed. A substrate to be treated on which a pattern or a trench is formed is located in a processing container. A reactive gas which reacts with the contaminants sticking on the sidewall of the pattern or the trench to produce reactive ions which remove or transmute the contaminants is introduced into the processing container. Plasma of the reactive gas is produced by electronic cyclotron resonance in order to produce reactive ions from the reactive gas introduced into the processing container. According to the method, the temperature of the reactive ions in the plasma becomes high, with the result that the motion of the reactive ions in the plasma becomes more active.

Abstract: An apparatus for cleaning a surface includes first and second reaction containers, a holding apparatus for holding, in the second reaction container, a substance to be processed on the surface of which foreign matter is present, an apparatus for supplying helium gas into the first reaction container, an apparatus for generating helium ions, electrons, and metastable helium by exciting helium gas in the first reaction container, and an apparatus for separating the metastable helium generated in the first reaction container and for introducing the metastable helium into the second reaction container.

Abstract: A principal feature of the present invention is to clean a surface of a semiconductor substrate without providing a damaged layer to the surface thereof. A native oxide film formed on the surface of a silicon substrate is etched by plasma employing a gas containing fluorine. The surface of the semiconductor substrate is again subjected to plasma etching by employing a gas containing fluorine in order to remove a surface damaged layer and a fluorocarbon layer formed in the above step of plasma etching. The semiconductor substrate surface is irradiated with ultraviolet rays under a low pressure in order to dissociate and remove fluorine atoms chemically adsorbed to the semiconductor substrate surface upon the latter plasma etching.

Abstract: In a plasma processing method and a plasma processing apparatus, a substrate is processed in a plasma with a surrounding focus ring levitated by the repulsion between a magnet mounted in the focus ring and an electromagnet. The height of the focus ring relative to the substrate support is adjusted to an optimal height by adjusting the current flowing to the electromagnet. Therefore, it is possible to achieve an optimal height of the focus ring for the etching of each layer in a laminated film to enhance the uniformity of laminated film etching and to achieve precise etching.

Abstract: The present invention is mainly characterized by obtaining a dry etching method which is improved to obtain a copper interconnection pattern with high dimensional accuracy. A resist pattern is formed on a copper interconnection layer formed on a substrate. Using the resist pattern as a mask, the copper interconnection layer is etched with plasma of an iodine type compound selected from the group consisting of HI, I.sub.2, BI.sub.3 and SiI.sub.4.

Abstract: In a plasma processing method and a plasma processing apparatus, plasma is processed by floating a focus ring by the repulsion between a magnet mounted in the focus ring and another electromagnet and adjusting the height of the focus ring to an optimal height by the current flowing to the electromagnet. Therefore, it is possible to set an optimal height of the focus ring for each layer in the laminated film etching, to enhance the uniformity of the laminated film etching, and to achieve a precise etching.

Abstract: A method of cleaning a surface including generating helium ions, electrons, and metastable helium by exciting helium gas, separating said metastable helium from the helium ions and electrons, and exposing a substance to be processed on the surface of which foreign matter is present to the metastable helium separated from the helium ions and electrons to remove the foreign matter from the substance.

Abstract: A plasma etching apparatus comprises a chamber, a holding table for holding samples, such as a semiconductor substrate to be etched, in the chamber, a plasma-generating device for generating a plasma within the chamber, and a magnetic-field-forming device which forms a magnetic field perpendicular to the surface of the sample placed on the holding table and parallel the inner wall of the chamber.

Abstract: A wafer treating device utilizing a plasma generated by a gas discharge caused by electron cyclotron resonance (ECR) includes a wafer treating chamber and a plasma generating chamber, a microwave supply for supplying microwave energy to the plasma generating chamber, and an electromagnetic coil which surrounds the plasma generating chamber to produce a minimum B-field therein. A plasma generated in the plasma generating chamber by electron cyclotron resonance is confined stably therein by the minimum B-field produced by the coil. Thus, the density and stability of the plasma in the plasma generating chamber are enhanced. The plasma in the plasma generating chamber is conveyed to a wafer in the wafer treating chamber along the diverging lines of a magnetic force. Examples of the minimum B-field producing coil include Ioffe bars, a baseball coil and an Yin-yang coil.

Abstract: A semiconductor wafer treating device utilizing a gas plasma generated by electron cyclotron resonance (ECR) is disclosed whch comprises a wafer treating chamber and a plasma generating chamber communicating with the wafer treating chamber. Microwave energy at a frequency of not more than 2 GHz and not less than 100 MHz is supplied to the plasma generating chamber which is surrounded by a solenoidal coil and produces a magnetic field in the plasma generating chamber and in the wafer treating chamber to produce ECR and transport the plasma generated by ECR to the wafer. Thus, the Larmor radius of the electrons moving in helical paths in electron cyclotron resonance in the plasma generating chamber is optimized to make the plasma spatially uniform. Consequently, the uniformity of the treatment on the wafer is improved.

Abstract: A mirror field which faces a surface of a specimen to be treated and which has its field axis parallel to the specimen surface is formed in an atmosphere in a reactive gas, and a plasma of the reactive gas is then generated by introducing microwave energy into a region where the mirror field is formed, the thus-formed plasma being confined by the mirror field. The specimen is then treated by activated neutral particles which are produced by the plasma to the surface of the specimen. Preferably, an electric field is formed in the direction along the field axis of the mirror field in a region where the plasma is generated.