Abstract: An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Abstract: In view of the problem with the prior art, the present invention addresses the following problems: providing a method that can suppress the generation of fine silver particles in a silver nanowire dispersion better than prior methods; and inhibiting, by a convenient method, particulation of silver nanowires on the anode side. A solution is a silver nanowire dispersion that contains silver nanowires, a dispersion solvent, and a chelating agent with the average diameter of the silver nanowires being not more than 100 nm, the silver nanowire dispersion being characterized in that the chelating agent content is 0.1 to 1,000 ?mol/g with reference to the silver nanowire content, and the chelating agent is a prescribed aromatic heterocyclic compound having at least one imine skeleton in the molecule.

Abstract: Provided is a process for silver nanowire production in which the major-axis length of the silver nanowires can be controlled in a wide range and an agent for controlling the growth of silver nanowires. A process for silver nanowire production which is characterized in that an agent for controlling the growth of silver nanowires which comprises a polymer obtained by polymerizing one or more polymerizable monomers comprising an N-substituted (meth)acrylamide is reacted with a silver compound in a polyol at 25-180° C. The agent for controlling the growth of silver nanowires is characterized by comprising a polymer which has units of an N-substituted (meth)acrylamide as a polymerizable monomer.

Abstract: The present invention relates to a weather resistance improver including a compound (A) and at least one of a compound (B) and a compound (C), in which the compound (A) is a compound represented by general formula (1) or (2) below, the compound (B) is gallic acid, a gallic acid derivative or tannic acid, and the compound (C) is a compound represented by general formula (3) below. Such a weather resistance improver can suppress degradation of a transparent conductive film including a metal nanowire both under long-term exposure to sunlight and under high humidity and high temperature conditions.

Abstract: Provided is a process for silver nanowire production in which the major-axis length of the silver nanowires can be controlled in a wide range and an agent for controlling the growth of silver nanowires. A process for silver nanowire production which is characterized in that an agent for controlling the growth of silver nanowires which comprises a polymer obtained by polymerizing one or more polymerizable monomers comprising an N-substituted (meth)acrylamide is reacted with a silver compound in a polyol at 25-180° C. The agent for controlling the growth of silver nanowires is characterized by comprising a polymer which has units of an N-substituted (meth)acrylamide as a polymerizable monomer.

Abstract: Provided is a process for silver nanowire production in which the major-axis length of the silver nanowires can be controlled in a wide range and an agent for controlling the growth of silver nanowires. A process for silver nanowire production which is characterized in that an agent for controlling the growth of silver nanowires which comprises a polymer obtained by polymerizing one or more polymerizable monomers comprising an N-substituted (meth)acrylamide is reacted with a silver compound in a polyol at 25-180° C. The agent for controlling the growth of silver nanowires is characterized by comprising a polymer which has units of an N-substituted (meth)acrylamide as a polymerizable monomer.

Abstract: The present invention provides a metal nanowire-containing composition that has high compatibility between high preservation stability and coating suitability and that can produce a coating film having high compatibility among high conductivity, high transparency, and low turbidity and high compatibility among high abrasion resistance, water resistance, alcohol resistance, and adhesiveness to a substrate. The metal nanowire-containing composition contains a metal nanowire, a binder, a surfactant, and a solvent, wherein the binder contains a binder component (A) being a polysaccharide; and a binder component (B) being at least one selected from aqueous polyester resins, aqueous polyurethane resins, aqueous acrylic resins, and aqueous epoxy resins.

Abstract: Provided is a process for silver nanowire production in which the major-axis length of the silver nanowires can be controlled in a wide range and an agent for controlling the growth of silver nanowires. A process for silver nanowire production which is characterized in that an agent for controlling the growth of silver nanowires which comprises a polymer obtained by polymerizing one or more polymerizable monomers comprising an N-substituted (meth)acrylamide is reacted with a silver compound in a polyol at 25-180° C. The agent for controlling the growth of silver nanowires is characterized by comprising a polymer which has units of an N-substituted (meth)acrylamide as a polymerizable monomer.

Abstract: A method of generating an exposure pattern for lithography to create a plurality of patterns arranged in a predetermined direction, comprises a step of counting the plurality of patterns along this predetermined direction, and generating a first enlarged pattern by moving the edges to a first direction along the predetermined direction for a pattern with an odd number, and by moving the edges to a second direction, which is opposite to the first direction, for a pattern with an even number, and a step of generating a second enlarged pattern by moving the edges to the second direction for the pattern with an odd number, and by moving the edges to the first direction for the pattern with an even number. And the first and second patterns are used for creating the plurality of original patterns in a lithography step using the respective enlarged patterns.

Abstract: A chitosan-containing powder which contains chitosan particles formed by dissolving chitosan in an edible organic acid and spray-drying the solution. The molar ratio of the amount of the chitosan to that of the edible organic acid to be used for dissolving the chitosan may be about from 1/0.9 to 1/0.8. The molecular weight of the chitosan to be dissolved in the edible organic acid may be about 10,000 to 300,000. The degree of deacetylation of the chitosan to be dissolved in the edible organic acid may be about 90% or higher. The chitosan-containing powder has a higher chitosan content than conventional ones.

Abstract: A method of generating an exposure pattern for lithography to create a plurality of patterns arranged in a predetermined direction, comprises a step of counting the plurality of patterns along this predetermined direction, and generating a first enlarged pattern by moving the edges to a first direction along the predetermined direction for a pattern with an odd number, and by moving the edges to a second direction, which is opposite to the first direction, for a pattern with an even number, and a step of generating a second enlarged pattern by moving the edges to the second direction for the pattern with an odd number, and by moving the edges to the first direction for the pattern with an even number. And the first and second patterns are used for creating the plurality of original patterns in a lithography step using the respective enlarged patterns.

Abstract: A video data playback system for reproducing requested video data by switching coded video data to be reproduced between normal playback coded video data and fast playback coded video data according to a requested playback mode, where the normal playback coded video data are encoded by a first video coding scheme using both intra-frame coding and inter-frame coding, while the fast playback coded video data are encoded by a second video coding scheme using only intra-frame coding and having a playback bit rate and a frame rate identical to those of the normal playback coded video data. The normal playback coded video data can be obtained by encoding the original video data first, then the fast playback coded video data can be obtained by encoding selectively decoded normal playback coded video data. Alternatively, the normal and fast playback coded video data can be obtained by synchronizing start and end of encoding by the first video coding scheme and encoding by the second video coding scheme.

Abstract: A video library system capable of shortening the worst response time with respect to each video data reading request, without lowering the possible level of multiplexing.