Abstract: Provided are an inhibitor for RuO4 gas generation used in a manufacturing process of a semiconductor element, that inhibits a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuO4 gas. Specifically, provided is an inhibitor for RuO4 gas generation for inhibiting a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact in semiconductor formation steps, wherein the inhibitor includes an onium salt consisting of an onium ion and a bromine-containing ion. Also provided is a method for inhibiting RuO4 gas generation by adding the inhibitor to a ruthenium treatment liquid or a ruthenium-containing liquid used in semiconductor formation steps.

Abstract: Provided are an inhibitor for RuO4 gas generation used in a manufacturing process of a semiconductor element, that inhibits a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuO4 gas. Specifically, provided is an inhibitor for RuO4 gas generation for inhibiting a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact in semiconductor formation steps, wherein the inhibitor includes an onium salt consisting of an onium ion and a bromine-containing ion. Also provided is a method for inhibiting RuO4 gas generation by adding the inhibitor to a ruthenium treatment liquid or a ruthenium-containing liquid used in semiconductor formation steps.

Abstract: The present invention addresses the issue of providing a method for removing a transition metal oxide adhered to a transition metal film in a process for manufacturing a semiconductor element, and of providing a treatment liquid. Specifically, the present invention provides a method for treating a semiconductor of a transition metal, the method including, in a semiconductor formation process, a step of removing a transition metal oxide and a step of removing the transition metal. The present invention also provides a reducing agent-containing treatment liquid for a transition metal oxide, wherein the concentration of the reducing agent contained in the reducing agent-containing treatment liquid is 0.01 mass % or more and 50 mass % or less.

Abstract: The present invention provides a method for the removal of substantially all the amount of Mn contained in cobalt containing solution thereby to obtain purified cobalt solution with Mn content of 10 ppm or less and specifically a method for removing Mn from cobalt sulfate solution comprising the steps of adjusting pH of the solution within the range of 3–6 and then adding the NaOCl to the solution to obtain an oxidation-reduction potential in the range of 1100 to 1300 mV, with respect to standard hydrogen electrode (SHE); and removing Mn precipitate from thus treated solution.

Abstract: The present invention provides a method for the removal of substantially all the amount of Mn contained in cobalt containing solution thereby to obtain purified cobalt solution with Mn content of 10 ppm or less and specifically a method for removing Mn from cobalt sulfate solution comprising the steps of adjusting pH of the solution within the range of 3-6 and then adding the NaOCl to the solution to obtain an oxidation-reduction potential in the range of 1100 to 1300 mV, with respect to standard hydrogen electrode (SHE); and removing Mn precipitate from thus treated solution.