Abstract: In a writing utensil with a pressurizing mechanism, a cylinder is provided such that it comes into sliding contact with an outer peripheral part of a valve element and moves back and forth. An inner wall face of the cylinder is provided with a ventilating recess communicating with outside air, and an annular non-pressure contact face is positioned on the rear side of the ventilating recess. When the cylinder moves forwardly, the valve element is brought into pressure contact with the non-pressure contact face to seal the pressurizing chamber and when the cylinder moves backwardly, the valve element is moved forward and is separated from the non-pressure contact face, such that the ventilating recess communicates with the pressurized chamber.

Abstract: Provided is a writing utensil with a pressurizing mechanism, wherein the cylinder is provided in such a manner that it comes into sliding contact with an outer peripheral part of the valve element and move back and forth, and an inner wall face of the cylinder is provided with a ventilating recess communicating with outside air, and an annular non-pressure contact face positioned on the rear side of the ventilating recess, and when the cylinder moves forward, the valve element is brought into pressure contact with the non-pressure contact face to seal the pressurizing chamber, and when the cylinder moves backward, the valve element is moved forward and separated from the non-pressure contact face such that the ventilating recess communicates with the pressurizing chamber.

Abstract: A method for forming a Cu thin film on a substrate includes a Cu-CVD step forming a first copper film on predetermined surface of a substrate by a CVD process and a plating step further forming a second copper film on the first copper film by an eletrolytic copper plating process using the first copper film as an electrode. A modifying step modifies the first copper film by exposing it in an active atmosphere between the Cu-CVD step and the plating step. Fine voids can thereby be effectively prevented from being formed in the vicinity of the interface between the first copper film and the second copper film.

Abstract: A method for the formation of copper wiring films includes the steps of forming a first copper film by a CVD method on a diffusion barrier film, which diffusion barrier film has been formed on a semiconductor substrate and in which a concavity has been established; heating the first copper film to a temperature within the range from 200 to 500° C.; and subsequently forming a second copper film on the first copper film by a plating method using the first copper film as an electrode.

Abstract: In a method for forming a Cu thin film on a substrate including a Cu-CVD step of forming a first copper film on predetermined surface of a substrate by a CVD process and a plating step of further forming a second copper film on the first copper film by an electrolytic copper plating process using the first copper film as an electrode, a modifying step for modifying the first copper film by exposing it in an active atmosphere is interposed between the Cu-CVD step and the plating step. Thereby, fine voids can be effectively prevented from being formed in the vicinity of the interface between the first copper film and the second copper film.

Abstract: A method for the formation of copper wiring films includes the steps of forming a first copper film by means of a CVD method on an insulating diffusion barrier film, which insulating diffusion barrier film has been formed on a semiconductor substrate and in which a concavity has been established; heating the first copper film to a temperature within the range from 200 to 500° C.; and subsequently forming a second copper film on the first copper film by a plating method using the first copper film as an electrode.

Abstract: A CVD apparatus for depositing a copper interconnect film on a substrate is equipped with a first CVD module 15 which deposits a copper film as a foundation using a Cu(hfac)(tmvs)-based precursor material having a small film deposition rate, and a second CVD module 16 which performs film deposition to increase the thickness of the copper film using a Cu(hfac)(atms)-based precursor material having a large film deposition rate. The film deposition rate of the Cu(hfac)(tmvs)-based precursor material is about 100 nm per minute and the film deposition rate of the Cu(hfac)(atms)-based precursor material is about 400 nm per minute. This realizes a practical CVD apparatus for mass production which achieves both a high film deposition efficiency and high film quality.

Abstract: A method of cleaning metallic films built up within a thin film deposition apparatus is disclosed. The method includes an oxidation step to oxidize the metallic film and produce a film of the oxide thereof, a complexing step to complex the oxide film and produce a complex thereof, and a sublimation step to sublimate the complex. The conditions of these cleaning steps are set so that the oxidation step is the rate-determining step.

Abstract: A surface processing apparatus includes a microwave generator which generates low UHF band microwaves of from 300 MHz to 1 GHz, a cavity resonator in which the microwaves generated in the microwave generator resonate in the TM 010 mode, an airtight process chamber which is connected to the cavity resonator, a radiation plate which is arranged in a part of the cavity resonator which is connected with the process chamber, the radiation plate has a plurality of radiation holes which are established symmetrically with respect to a central axis of the cavity resonator, and cover plates made of a dielectric material which close off the radiation holes in an airtight manner.