Abstract: There is provided a substrate processing method for removing an oxide film formed on a surface of a substrate. The method includes (a) transforming the oxide film into a reaction by-product by supplying a halogen element-containing gas and a basic gas to the substrate accommodated in a processing chamber; and (b) sublimating the reaction by-product to remove the reaction by-product from the substrate by stopping the supply of the halogen element-containing gas into the processing chamber and supplying an inert gas into the processing chamber. The steps (a) and (b) are repeated a plurality of times.

Abstract: A substrate processing method for removing an oxide film formed on the surface of a substrate includes modifying the oxide film into a reaction product by supplying a halogen element-containing gas and an alkaline gas onto the substrate accommodated in the interior of a processing chamber, and sublimating the reaction product by stopping the supply of the halogen element-containing gas into the processing chamber for removal from the substrate, wherein an internal pressure of the processing chamber in the sublimating is set to be higher than an internal pressure of the processing chamber in the modifying by supplying an inert gas into the processing chamber.

Abstract: A substrate processing method for removing an oxide film formed on the surface of a substrate includes modifying the oxide film into a reaction product by supplying a halogen element-containing gas and an alkaline gas onto the substrate accommodated in the interior of a processing chamber, and sublimating the reaction product by stopping the supply of the halogen element-containing gas into the processing chamber for removal from the substrate, wherein an internal pressure of the processing chamber in the sublimating is set to be higher than an internal pressure of the processing chamber in the modifying by supplying an inert gas into the processing chamber.

Abstract: An etching method includes a modification process of supplying a mixture gas to a surface of a silicon oxide film, modifying the silicon oxide film to generate a reaction product, and a heating process of heating and removing the reaction product. The modification process includes a first modification process of supplying the mixture gas containing a gas including a halogen element and an alkaline gas to the surface of the silicon oxide film, and a second modification process of stopping supplying the alkaline gas and supplying the mixture gas containing the gas including the halogen element to the surface of the silicon oxide film.

Abstract: There is provided a substrate processing method for removing an oxide film formed on a surface of a substrate. The method includes (a) transforming the oxide film into a reaction by-product by supplying a halogen element-containing gas and a basic gas to the substrate accommodated in a processing chamber; and (b) sublimating the reaction by-product to remove the reaction by-product from the substrate by stopping the supply of the halogen element-containing gas into the processing chamber and supplying an inert gas into the processing chamber. The steps (a) and (b) are repeated a plurality of times.

Abstract: An etching method includes a modification process of supplying a mixture gas to a surface of a silicon oxide film, modifying the silicon oxide film to generate a reaction product, and a heating process of heating and removing the reaction product. The modification process includes a first modification process of supplying the mixture gas containing a gas including a halogen element and an alkaline gas to the surface of the silicon oxide film, and a second modification process of stopping supplying the alkaline gas and supplying the mixture gas containing the gas including the halogen element to the surface of the silicon oxide film.