Abstract: A component concentration measuring device includes a liquid collecting unit configured to collect a main liquid including a measurement target component which is an object to be measured and discharge a mixed liquid obtained by mixing the main liquid with an auxiliary liquid supplied from an outside; and a first sensing unit including a first flow path positioned downstream of the liquid collecting unit and an in-mixed-liquid concentration measuring unit positioned in the first flow path and configured to measure a first measurement target component concentration which is the concentration of the measurement target component in the mixed liquid.

Abstract: A rotary electrical machine structure support that can have strength high enough to endure vibration and strain while suffering less defects, deformation, peeling, and breakage is manufactured. A method of manufacturing a rotary electrical machine structure support includes: an arranging step of arranging a first joining object member and a second joining object member composed of stacked and integrated plate materials and thicker than the first joining object member, with their end parts in contact with each other; and a joining step of making a rotary driven tool penetrate into a boundary part between the first and second joining object members whose end parts are in contact with each other, from a first outer surface side of the boundary part, and sliding the tool along an interface of the boundary part, whereby a rotary electrical machine structure support composed of the joined first and second joining object members is obtained.

Abstract: A method of manufacturing a rotor coil of to an embodiment includes preparing a wire strand bundling a plurality of wires and a reinforcing member configured to reinforce the wire strand; arranging the wire strand and the reinforcing member to bring an end of the wire strand and an end of the reinforcing member into contact with each other, the wire strand being arranged to have a longitudinal direction perpendicular to a boundary between the wire strand and the reinforcing member and to include the plurality of wires with an inclined longitudinal direction thereof on a first outer surface inclining with respect to the longitudinal direction of the wire strand; rotary driving a tool at the boundary on the first outer surface so as to enter the boundary; and moving the rotary driven tool on the boundary along the first outer surface.

Abstract: To provide an elemental technique for improving the emission intensity of deep ultraviolet light from a light emitting layer made of an AlGaInN-based material, in particular, an AlGaN-based material. First, an AlN layer is grown on a sapphire surface. The AlN layer is grown under a NH3-rich condition. The TMAl pulsed supply sequence includes growing an AlGaN layer for 10 seconds, interrupting the growth for 5 seconds to remove NH3, and then introducing TMAl at a flow rate of 1 sccm for 5 seconds. After that, the growth is interrupted again for 5 seconds. Defining this sequence as one growth cycle, five growth cycles are carried out. By such growth, an AlGaN layer having a polarity of richness in Al can be obtained. The above sequence is described only for illustrative purposes, and various variations are possible. In general, the Al polarity can be achieved by a process of repeating both growth interruption and supply of an Al source.

Abstract: Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate 1, an AlN nucleation layer 3 formed on the sapphire substrate 1, a pulsed supplied AlN layer 5 formed on the AlN nucleation layer 3, and a continuous growth AlN layer 7 formed on the pulsed supplied AlN layer 5. Formed on the continuous growth AlN layer 7 is at least one set of a pulsed supplied AlN layer 11 and a continuous growth AlN layer 15. The AlN layer 3 is grown in an initial nucleation mode which is a first growth mode by using an NH3 pulsed supply method. The pulsed supplied AlN layer 5 is formed by using NH3 pulsed supply in a low growth mode which is a second growth mode that increases a grain size and reduces dislocations and therefore is capable of reducing dislocations and burying the nucleation layer 3.

Abstract: To provide an elemental technique for improving the emission intensity of deep ultraviolet light from a light emitting layer made of an AlGaInN-based material, in particular, an AlGaN-based material. First, an AlN layer is grown on a sapphire surface. The AlN layer is grown under a NH3-rich condition. The TMAl pulsed supply sequence includes growing an AlGaN layer for 10 seconds, interrupting the growth for 5 seconds to remove NH3, and then introducing TMAl at a flow rate of 1 sccm for 5 seconds. After that, the growth is interrupted again for 5 seconds. Defining this sequence as one growth cycle, five growth cycles are carried out. By such growth, an AlGaN layer having a polarity of richness in Al can be obtained. The above sequence is described only for illustrative purposes, and various variations are possible. In general, the Al polarity can be achieved by a process of repeating both growth interruption and supply of an Al source.

Abstract: Provided is a nanowire photovoltaic cell (1) including a semiconductor substrate (2) and a plurality of nanowire semiconductors (4) and (5) having a PN junction. The semiconductor substrate (2) and the nanowire semiconductors (4) and (5) are composed of one single crystal. The manufacture method of the nanowire photovoltaic cell includes a step of coating a part of a surface of the semiconductor substrate (2) with an amorphous film (3), and a step of developing a crystal of a material identical to that of the semiconductor substrate (2) through epitaxial growth on the uncoated surface of the semiconductor substrate (2) to form the plurality of nanowire semiconductors (4) and (5).

Abstract: To provide an elemental technique for improving the emission intensity of deep ultraviolet light from a light emitting layer made of an AlGaInN-based material, in particular, an AlGaN-based material. First, an AlN layer is grown on a sapphire surface. The AlN layer is grown under a NH3-rich condition. The TMAl pulsed supply sequence includes growing an AlGaN layer for 10 seconds, interrupting the growth for 5 seconds to remove NH3, and then introducing TMAl at a flow rate of 1 sccm for 5 seconds. After that, the growth is interrupted again for 5 seconds. Defining this sequence as one growth cycle, five growth cycles are carried out. By such growth, an AlGaN layer having a polarity of richness in Al can be obtained. The above sequence is described only for illustrative purposes, and various variations are possible. In general, the Al polarity can be achieved by a process of repeating both growth interruption and supply of an Al source.

Abstract: Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate 1, an AlN nucleation layer 3 formed on the sapphire substrate 1, a pulsed supplied AlN layer 5 formed on the AlN nucleation layer 3, and a continuous growth AlN layer 7 formed on the pulsed supplied AlN layer 5. Formed on the continuous growth AlN layer 7 is at least one set of a pulsed supplied AlN layer 11 and a continuous growth AlN layer 15. The AlN layer 3 is grown in an initial nucleation mode which is a first growth mode by using an NH3 pulsed supply method. The pulsed supplied AlN layer 5 is formed by using NH3 pulsed supply in a low growth mode which is a second growth mode that increases a grain size and reduces dislocations and therefore is capable of reducing dislocations and burying the nucleation layer 3.