Patents by Inventor Tomoaki Sato
Tomoaki Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240101093Abstract: A vehicle brake system includes a switching valve switchable between a first state allowing communication between a first fluid pressure generating device and a frictional brake and a second state allowing communication between a second fluid pressure generating device and the frictional brake. The second fluid pressure generating device generates a fluid pressure by moving a piston with an electric actuator, and has a fluid pressure supply port connected to the switching valve and an atmosphere opening port connected to a reservoir tank. When, due to a failure, the switching valve becomes a third state in which the switching valve makes each of the first fluid pressure generating device and the second fluid pressure generating device communicate with the frictional brake, a control device controls the second fluid pressure generating device to close the atmosphere opening port with the piston.Type: ApplicationFiled: September 20, 2023Publication date: March 28, 2024Inventors: Atsuki OHIRA, Eisuke HORII, Hiroyuki IWASAKI, Masayuki UENO, Shotaro YAMAZAKI, Takashi SHIMADA, Tomoaki KOTAKI, Yohei SATO
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Patent number: 11932590Abstract: Provided are an inhibitor for RuO4 gas generation used in a manufacturing process of a semiconductor element, that inhibits a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuO4 gas. Specifically, provided is an inhibitor for RuO4 gas generation for inhibiting a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact in semiconductor formation steps, wherein the inhibitor includes an onium salt consisting of an onium ion and a bromine-containing ion. Also provided is a method for inhibiting RuO4 gas generation by adding the inhibitor to a ruthenium treatment liquid or a ruthenium-containing liquid used in semiconductor formation steps.Type: GrantFiled: September 23, 2020Date of Patent: March 19, 2024Assignee: TOKUYAMA CORPORATIONInventors: Tomoaki Sato, Yuki Kikkawa, Takafumi Shimoda, Takayuki Negishi
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Publication number: 20240090194Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.Type: ApplicationFiled: August 10, 2023Publication date: March 14, 2024Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yuichi SATO, Ryota HODO, Yuta IIDA, Tomoaki MORIWAKA
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Publication number: 20240087911Abstract: The present invention addresses the issue of providing a method for removing a transition metal oxide adhered to a transition metal film in a process for manufacturing a semiconductor element, and of providing a treatment liquid. Specifically, the present invention provides a method for treating a semiconductor of a transition metal, the method including, in a semiconductor formation process, a step of removing a transition metal oxide and a step of removing the transition metal. The present invention also provides a reducing agent-containing treatment liquid for a transition metal oxide, wherein the concentration of the reducing agent contained in the reducing agent-containing treatment liquid is 0.01 mass % or more and 50 mass % or less.Type: ApplicationFiled: December 13, 2021Publication date: March 14, 2024Applicant: TOKUYAMA CORPORATIONInventors: Kohei SAITO, Tomoaki SATO, Yuki KIKKAWA, Takafumi SHIMODA, Takayuki NEGISHI
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Publication number: 20240075915Abstract: A vehicle brake system includes a first fluid pressure generating device for generating a fluid pressure according to a brake operating amount, a second fluid pressure generating device for generating a fluid pressure by moving a piston with an electric actuator, and a switching valve switchable between a first state allowing communication between the first fluid pressure generating device and a vehicle behavior stabilizing device and a second state allowing communication between the second fluid pressure generating device and the vehicle behavior stabilizing device. A control device places the switching valve in the second state during execution of automatic brake control, and places the switching valve in the first state when a predetermined abnormality occurs in the vehicle, except that the control device places the switching valve in the second state when an abnormality including inability of the second fluid pressure generating device to generate the fluid pressure occurs.Type: ApplicationFiled: September 5, 2023Publication date: March 7, 2024Inventors: Eisuke HORII, Hiroyuki IWASAKI, Yohei SATO, Tomoaki KOTAKI, Masayuki UENO, Shotaro YAMAZAKI, Atsuki OHIRA
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Publication number: 20240055272Abstract: An object of the present invention is to provide a method for producing a semiconductor containing a transition metal with a flat surface, by suppressing loss of flatness (surface roughening) of the transition metal surface, which is caused by anisotropic etching resulting from different etching rates among different crystal planes of the transition metal during etching of the transition metal film with crystal planes of various orientations exposed at the surface. According to the present invention, the problem is solved by any one of the following: a processing method for a semiconductor containing a transition metal, the method including a step of etching the transition metal at an etching amount ratio of 0.Type: ApplicationFiled: December 20, 2021Publication date: February 15, 2024Applicant: TOKUYAMA CORPORATIONInventors: Yuki KIKKAWA, Tomoaki SATO, Kohei SAITO, Hiroto YARIMIZU, Takayuki NEGISHI
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Publication number: 20240014045Abstract: Provided is a treatment liquid for treating a semiconductor wafer in a semiconductor forming process, the treatment liquid containing (A) a hypobromite ion, (B) a pH buffer, and (C) an onium ion represented by formula (1): (wherein R1, R2, R3, and R4 each independently denote an alkyl group having carbon number from 1 to 25,)Type: ApplicationFiled: August 6, 2021Publication date: January 11, 2024Applicant: TOKUYAMA CORPORATIONInventors: Takafumi SHIMODA, Yuki KIKKAWA, Tomoaki SATO, Takayuki NEGISHI
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Publication number: 20230385189Abstract: An information processing device includes a processor that manages allocation of a resource in a storage region of a storage to a plurality of functions. The storage is mounted on a vehicle and includes a dedicated region and a shared region. The dedicated region is configured to be allocated the resource configured to be exclusively used by a specific function, among the functions. The shared region is configured to be allocated the resource configured to be shared by the functions. The resource in the shared region is configured to be dynamically allocated.Type: ApplicationFiled: May 31, 2023Publication date: November 30, 2023Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, MITSUBISHI MOTORS CORPORATION, SUBARU CORPORATION, Nissan Motor Co., Ltd., Honda Motor Co., Ltd.Inventors: Norihide KOHMOTO, Shinsuke SAKASHITA, Tomoaki SATO, Yusuke TAKADA
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Patent number: 11811368Abstract: A power amplifier circuit includes a first amplification path including a first power amplifier, a second amplification path including a second power amplifier, a first switching circuit configured to electrically connect either the first amplification path or the second amplification path and a first output terminal to each other, a second switching circuit configured to electrically connect an input terminal and any one of a plurality of second output terminals to each other, and a matching circuit configured to electrically connect the first output terminal and the input terminal to each other and achieve impedance matching between the first output terminal and the input terminal.Type: GrantFiled: April 14, 2021Date of Patent: November 7, 2023Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Satoshi Goto, Tomoaki Sato, Hisanori Namie
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Publication number: 20230306797Abstract: A watercraft positional information managing system in which GPS-based positional information is prevented from being falsified includes a server and a watercraft. The watercraft includes a propulsion device and a communicator to communicate with the server. The communicator includes a position detector to detect positional information of the watercraft. The propulsion device includes an engine and a controller configured or programmed to control the engine. The controller is connected to the communicator and outputs data related to the engine to the communicator. The communicator transmits the data related to the engine and the positional information of the watercraft to the server. The server receives the data related to the engine and the positional information of the watercraft and determines whether or not the positional information of the watercraft is genuine based on the data related to the engine.Type: ApplicationFiled: March 16, 2023Publication date: September 28, 2023Inventors: Hiroshi INOUE, Tomoaki SATO
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Publication number: 20230257887Abstract: Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.Type: ApplicationFiled: April 26, 2023Publication date: August 17, 2023Applicant: TOKUYAMA CORPORATIONInventors: Tomoaki SATO, Yuki KIKKAWA, Takafumi SHIMODA, Takayuki NEGISHI
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Publication number: 20230207329Abstract: Provided is a treatment liquid for a semiconductor with ruthenium including a ligand which coordinates to ruthenium, the treatment liquid is a treatment liquid for inhibiting a ruthenium-containing gas generated when contacting a semiconductor wafer including ruthenium with the treatment liquid in a semiconductor forming process. Also provided is an inhibitor for the generation of a ruthenium-containing gas, including a compound having a carbonyl group or a heterocyclic compound. Further provided is a treatment agent for a ruthenium-containing waste liquid, including a compound having a carbonyl group or a heterocyclic compound.Type: ApplicationFiled: February 25, 2021Publication date: June 29, 2023Applicant: TOKUYAMA CORPORATIONInventors: Tomoaki SATO, Yuki KIKKAWA, Takafumi SHIMODA, Takayuki NEGISHI
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Patent number: 11674230Abstract: Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.Type: GrantFiled: July 8, 2020Date of Patent: June 13, 2023Assignee: TOKUYAMA CORPORATIONInventors: Tomoaki Sato, Yuki Kikkawa, Takafumi Shimoda, Takayuki Negishi
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Publication number: 20230126771Abstract: A treatment liquid for a semiconductor containing a group 6 metal, the treatment liquid containing hypobromite ions. Also provided is a treatment liquid for a semiconductor containing a group 6 metal, the treatment liquid characterized by being formed by adding and mixing at least a bromine-containing compound, an oxidizing agent, a base compound, and water, wherein relative to a total mass, an added amount of the bromine-containing compound is 0.008 mass % or more and less than 10 mass % as an amount of bromine element, and an added amount of the oxidizing agent is 0.1 mass ppm or more and 20 mass % or less; and pH at 25° C. is 8 or higher and 14 or lower. Further provided is a method for producing the treatment liquid for a semiconductor.Type: ApplicationFiled: March 31, 2021Publication date: April 27, 2023Applicant: TOKUYAMA CORPORATIONInventors: Yuki KIKKAWA, Tomoaki SATO, Takafumi SHIMODA, Takayuki NEGISHI
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Patent number: 11572331Abstract: Provided is a method of producing a quaternary alkyl ammonium hypochlorite solution with an excellent storage stability. Specifically, provided is a method of producing a quaternary alkyl ammonium hypochlorite solution, the method including: a preparation step in which a quaternary alkyl ammonium hydroxide solution is prepared and the concentration of amines in the quaternary alkyl ammonium hydroxide solution is set to 20 ppm by mass or less; and a reaction step in which the quaternary alkyl ammonium hydroxide solution is brought into contact with chlorine gas, wherein the concentration of carbon dioxide of a gas phase in the reaction step is 100 ppm by volume or less and the pH of a liquid phase in the reaction step is 10.5 or more.Type: GrantFiled: June 13, 2022Date of Patent: February 7, 2023Assignee: TOKUYAMA CORPORATIONInventors: Takafumi Shimoda, Yuki Kikkawa, Tomoaki Sato, Takayuki Negishi
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Publication number: 20220411937Abstract: The present invention provides a semiconductor wafer treatment liquid, the treatment liquid including at least one hypohalite ion, and at least one anion species selected from halate ion, halite ion and halide ion, wherein at least one of the anion species has a content of 0.30 mol/L or more and 6.00 mol/L or less relative to the treatment liquid.Type: ApplicationFiled: November 25, 2021Publication date: December 29, 2022Applicant: TOKUYAMA CORPORATIONInventors: Tomoaki SATO, Yuki KIKKAWA, Takafumi SHIMODA, Takayuki NEGISHI
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Publication number: 20220394643Abstract: Provided are a network synchronization system and a synchronization method for a network system that achieve network synchronization for a network between geographically apart points. The network synchronization system includes a first communication device positioned at a first point, a second communication device positioned at a second point being different from the first point, and a third communication device configured to communicate with the first communication device and the second communication device, and receive synchronization information relating to the first communication device from the first communication device, and then transmit the synchronization information relating to the first communication device to the second communication device.Type: ApplicationFiled: May 27, 2022Publication date: December 8, 2022Applicant: NEC CorporationInventor: Tomoaki SATO
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Publication number: 20220328320Abstract: Provided are: a semiconductor treatment liquid containing a hypobromite ion, in which the concentration of the hypobromite ion is 0.1 ?mol/L or more and less than 0.001 mol/L; a RuO4 gas generation inhibitor containing an onium salt composed of an onium ion and a bromine-containing ion, in which the hypobromite ion concentration is 0.1 ?mol/L or more and less than 0.001 mol/L; and a method of producing a halogen oxyacid, the method including allowing a bromine salt, an organic alkali, and a halogen to react with each other to obtain the halogen oxyacid.Type: ApplicationFiled: March 30, 2022Publication date: October 13, 2022Applicant: TOKUYAMA CORPORATIONInventors: Yuki KIKKAWA, Tomoaki SATO, Takayuki NEGISHI
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Publication number: 20220316996Abstract: A ruthenium oxide gas absorbent liquid includes an organic alkali solution containing a ligand and/or an onium salt composed of an onium ion and an anion, at least part of which is a hydroxide ion, wherein the hydroxide ion has a concentration ranging from more than 1×10?7 mol/L to 6 mol/L or less.Type: ApplicationFiled: June 17, 2020Publication date: October 6, 2022Applicant: TOKUYAMA CORPORATIONInventors: Tomoaki SATO, Yuki KIKKAWA, Takafumi SHIMODA, Takayuki NEGISHI, Shigenori MAEDA
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Patent number: D984947Type: GrantFiled: July 28, 2021Date of Patent: May 2, 2023Assignee: AMERICAN HONDA MOTOR CO., INC.Inventors: Jeffery L. Miller, Tomoaki Sato