Abstract: A silicon-containing composition includes: a polysiloxane including a first structural unit represented by formula (1); and a solvent. X is an alkali-dissociable group; a is an integer of 1 to 3; and when a is 2 or more, a plurality of Xs are the same or different from each other. R1 is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom; b is an integer of 0 to 2; and when b is 2, two R1s are the same or different from each other. a + b is 3 or less.

Abstract: A composition for resist underlayer film formation, includes: a polysiloxane compound including a first structural unit represented by formula (1); and a solvent. X represents an organic group comprising at least one structure selected from the group consisting of a hydroxy group, a carbonyl group, and an ether bond; a is an integer of 1 to 3, wherein in a case in which a is no less than 2, a plurality of Xs are identical or different from each other; R1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms, wherein is a group other than X; and b is an integer of 0 to 2, wherein in a case in which b is 2, two R1s are identical or different from each other, and wherein a sum of a and b is no greater than 3.

Abstract: A resist underlayer film-forming composition includes: a polysiloxane compound including a first structural unit represented by formula (1); and a solvent. X represents a group represented by formula (2); a is an integer of 1 to 3; R1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; and b is an integer of 0 to 2; and a sum of a and b is no greater than 3. R2 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; n is 1 or 2; R3 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; L represents a single bond or a divalent linking group; and * denotes a site bonding to the silicon atom in the formula (1). The composition is suitable for lithography with an electron beam or extreme ultraviolet ray.

Abstract: A composition includes a solvent and at least one compound selected from the group consisting of: a first compound which comprises a first structural unit comprising a Si—H bond, and a second structural unit represented by formula (2), and a second compound which comprises the second structural unit represented by the formula (2). X represents a monovalent organic group having 1 to 20 carbon atoms which comprises a nitrogen atom; e is an integer of 1 to 3; R4 represents a monovalent organic group having 1 to 20 carbon atoms, or a hydroxy group, a hydrogen atom, or a halogen atom; and f is an integer of 0 to 2. A sum of e and f is no greater than 3. In the case where the at least one compound is the second compound, f is 1 or 2, and at least one R4 represents a hydrogen atom.

Abstract: A film-forming composition includes a compound including a Si—H bond and an orthoester. The compound preferably includes a structural unit that is a structural unit represented by formula (1-1), a structural unit represented by formula (1-2), or a combination thereof. In the formula (1-1) and the formula (1-2), R1 and R2 each represent a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms; and R3 represents a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms that bonds to two Si atoms.

Abstract: A resist pattern-forming method includes treating a surface layer of a substrate with an ultraviolet ray, plasma, water, an alkali, an acid, hydrogen peroxide, ozone, or a combination thereof. The surface layer includes at least one metal element. A resist composition is applied on a surface of the surface layer to provide a resist film directly or indirectly on the surface. The resist film is exposed to an extreme ultraviolet ray or an electron beam. The resist film exposed is developed. The at least one metal element preferably belongs to period 3 to period 7 of group 3 to group 15 in periodic table.

Abstract: The pattern-forming method includes: applying a silicon-containing film-forming composition directly or indirectly on at least an upper face side of a substrate to form a silicon-containing film; applying a resist film-forming composition directly or indirectly on an upper face side of the silicon-containing film to form a resist film; exposing the resist film to an extreme ultraviolet ray or an electron beam; and developing the resist film exposed to form a resist pattern. The silicon-containing film-forming composition contains a compound having a first structural unit represented by formula (1), and a solvent. In the formula (1), R1 represents a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms; and X and Y each independently represent a hydrogen atom, a hydroxy group, a halogen atom or a monovalent organic group having 1 to 20 carbon atoms.

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or —OR2, and R2 represents a monovalent organic group.

Abstract: A film-forming material for a resist process includes: a siloxane polymer component including at least two selected from the group consisting of a sulfur atom, a nitrogen atom, a boron atom and a phosphorus atom; and organic solvent. The siloxane polymer component preferably has a formulation represented by formula (1). R1 represents a monovalent organic group comprising at least one of a sulfur atom and a nitrogen atom. R2 represents a monovalent organic group comprising at least one of a sulfur atom and a nitrogen atom, a hydrogen atom, a hydroxy group, or a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms. A pattern-forming method includes: applying the film-forming material for a resist process onto a substrate to form a silicon-containing film; forming a pattern using the silicon-containing film as a mask; and removing the silicon-containing film.

Abstract: A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or —OR2, and R2 represents a monovalent organic group.

Abstract: A composition for forming a resist underlayer film includes a polysiloxane, and an organic solvent composition. The organic solvent composition includes an alkylene glycol monoalkyl ether acetate having a standard boiling point of less than 150.0° C., and an organic solvent having a standard boiling point of no less than 150.0° C. In the organic solvent composition, a content of the alkylene glycol monoalkyl ether acetate is no less than 50% by mass and no greater than 99% by mass, and a content of the organic solvent is no less than 1% by mass and no greater than 50% by mass.

Abstract: A composition for silicon-containing film formation includes a polysiloxane compound and a solvent. The polysiloxane compound includes a structure represented by formula (Q2), a structure represented by formula (Q3) and a structure represented by formula (Q4). A value of q calculated according to formula (I) is no greater than 0.25, wherein q1 to q4 represent integrated intensities of 29Si-NMR signals due to the silicon atoms in the structures represented by the formulae (Q1) to (Q4), respectively. A weight average molecular weight of the polysiloxane compound is no greater than 4,000.

Abstract: A resist pattern-forming method capable of forming a resist pattern excellent in pattern collapse resistance in the case of development with the organic solvent in multilayer resist processes. The method has the steps of: (1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film; (2) providing a resist film on the resist underlayer film using a photoresist composition; (3) exposing the resist film; and (4) developing the exposed resist film using a developer solution containing no less than 80% by mass of an organic solvent, in which the composition for forming a resist underlayer film contains (A) a component that includes a polysiloxane chain and that has a carboxyl group, a group that can generate a carboxyl group by an action of an acid, an acid anhydride group or a combination thereof.

Abstract: A composition for forming a resist underlayer film includes a polysiloxane, and an organic solvent composition. The organic solvent composition includes an alkylene glycol monoalkyl ether acetate having a standard boiling point of less than 150.0° C., and an organic solvent having a standard boiling point of no less than 150.0° C. In the organic solvent composition, a content of the alkylene glycol monoalkyl ether acetate is no less than 50% by mass and no greater than 99% by mass, and a content of the organic solvent is no less than 1% by mass and no greater than 50% by mass.

Abstract: A polymer composition for aqueous binders includes (1) a polymer obtained by emulsion polymerization of (b) a first monomer having one ethylenically unsaturated bond in the molecule and (c) a second monomer having two or more ethylenically unsaturated bonds in the molecule in the presence of (a) an emulsifier, and (2) a wax.

Abstract: An ink-jet recording water-based ink composition includes a polymer obtained by emulsion polymerization of a monomer having an ethylene-type unsaturated bond in the molecule and divinylbenzene in the presence of a reactive emulsifier, a polyethylene-based wax, a water-soluble resin, water, and a colorant. When ink coat is formed on a plastic film having a degree of gloss at 60° of 140 to 150 by discharging droplets of the ink composition onto the plastic film, the ink coat has a degree of gloss at 60° within a range of 50 to 120.

Abstract: Provided is a metal-coating material excellent in sulfur barrier property and transparency, a method for protecting a metal using the metal-coating material, and a light emitting device permitting high luminance and long life.