Abstract: A multilayer ceramic electronic device includes a multilayer chip having a plurality of dielectric layers and a plurality of internal electrode layers facing each other through each of the plurality of dielectric layers, an external electrode that is provided on an end face of the multilayer chip in a second direction orthogonal to a first direction in which the plurality of internal electrode layers face each other, and has a plurality of glass portions that are spaced from each other on a surface of the external electrode, and a plated layer that is provided on the external electrode and has discontinuous portions on the plurality of glass portions.

Abstract: According to one embodiment, a power supply device includes a rectifying circuit configured to rectify an alternating-current power supply, a first capacitor configured to smooth a voltage after rectification, and a falling voltage chopper circuit configured to supply electric power to a load. The first capacitor is set to a capacity in which a section where a voltage after smoothing drops to an output voltage to the load is provided in a rectified half period of the alternating-current power supply. The falling voltage chopper circuit includes at least one switching element configured to receive an input of the voltage after smoothing, operate in a section where the voltage after smoothing exceeds the output voltage, and pause in a section of the output voltage and a second capacitor provided on an output side and having a capacity larger than the capacity of the first capacitor.

Abstract: According to one embodiment, a power supply device includes a rectifying circuit configured to rectify an alternating-current power supply, a first capacitor configured to smooth a voltage after rectification, and a falling voltage chopper circuit configured to supply electric power to a load. The first capacitor is set to a capacity in which a section where a voltage after smoothing drops to an output voltage to the load is provided in a rectified half period of the alternating-current power supply. The falling voltage chopper circuit includes at least one switching element configured to receive an input of the voltage after smoothing, operate in a section where the voltage after smoothing exceeds the output voltage, and pause in a section of the output voltage and a second capacitor provided on an output side and having a capacity larger than the capacity of the first capacitor.

Abstract: A first conversion unit (201) converts a signal from a time domain to a frequency domain. A signal extraction unit (202) extracts common channel information included in the signal which has been converted by the first conversion unit (201). A signal substitution unit (207) restores the common channel information which has been extracted by the signal extraction unit (202). An addition unit (208) substitutes the common channel information which has been restored by the signal substitution unit (207) for the common channel information included in the signal which has been converted by the first conversion unit (201). A second conversion unit (209) converts the signal including the common channel information substituted, which has been converted by the first conversion unit (201), from the frequency domain to the time domain.

Abstract: Provided is a communication capacity evaluating apparatus whereby the communication capacity can be grasped and the necessity of changing the content of a dead spot measure after the placement of a relay apparatus can be eliminated. In the communication capacity evaluating apparatus, a system information analyzing unit (121) acquires, from a received signal, used-band information of the communication using a MIMO mode. An S/N calculating unit (122) analyzes the received signal to determine a signal-to-noise ratio. A channel estimating unit (123) analyzes the received signal to determine a channel matrix. A throughput limit calculating unit (124) calculates the limit value of the communication capacity on the basis of the used-band information, information about the number of transmission antennas of a base station (180), information about the number of reception antennas of a radio relay apparatus (100) stored in advance, the signal-to-noise ratio and the channel matrix.

Abstract: According to one embodiment, a light source is mounted on one side of a base body, a cap is mounted on the other side of the base body and a lighting circuit is mounted in the cap. In the cap, a circumferential portion is formed, and a projection portion being projected from the other side of the circumferential portion and having an inner space opened to the one side is formed. The lighting circuit has a substrate and a plurality of components mounted on the substrate. The components include a first component group mounted on a center portion of the substrate and having a height stored in the projection portion and a second component group mounted on a peripheral portion of the substrate and having a smaller height stored in the circumferential portion.

Abstract: Both end portions of a magneto-resistive effect film form a junction taper shape and, at both end portions forming the junction taper shape, a pair of bias magnetic field applying layers are disposed via underlayers for applying a longitudinal bias magnetic field to a soft magnetic layer. Each of the underlayers is formed by a thin film made of at least one element selected from a group of Ru, Ti, Zr, Hf, and Zn or an alloy thin film containing, as a main component, at least one element selected from the group. Each of the bias magnetic field applying layers formed on the underlayers is formed by a hard magnetic layer and has a thickness of 200 ? or less (not including zero).

Abstract: A pair of domain control layers are disposed on both sides of the track width direction of the MR film so as to be separated from each other such that the MR film is held therebetween, and apply a longitudinal magnetic field to the MR film (free layer). The MR film is flanked by the domain control layers, each including a layer structure constituted by a base layer, a ferromagnetic layer, and a hard magnetic layer. The base layer causes the hard magnetic layer to have a magnetization direction aligning with an in-plane direction, so as to enhance the coercive force of the hard magnetic layer.

Abstract: At both end portions of at least a soft magnetic layer of a magneto-resistive effect film, a pair of bias magnetic field applying layers are disposed for applying a longitudinal bias magnetic field to the soft magnetic layer via magnetic underlayers. Further, mutual lattice point-to-point distances in the plane where each magnetic underlayer and the corresponding bias magnetic field applying layer are mated, are substantially equalized to each other. Therefore, a coercive force Hc in an in-plane direction (direction parallel to a film surface) of each bias magnetic field applying layer can be maintained at a high level so that even when further gap narrowing or track narrowing is aimed, the bias magnetic field applying layers can act to apply an effective bias magnetic field, i.e. can act to suppress occurrence of the Barkhausen noise.

Abstract: Both end portions of a magneto-resistive effect film form a junction taper shape and, at both end portions forming the junction taper shape, a pair of bias magnetic field applying layers are disposed via underlayers for applying a longitudinal bias magnetic field to a soft magnetic layer. Each of the underlayers is formed by a thin film made of at least one element selected from a group of Ru, Ti, Zr, Hf, and Zn or an alloy thin film containing, as a main component, at least one element selected from the group. Each of the bias magnetic field applying layers formed on the underlayers is formed by a hard magnetic layer and has a thickness of 200 ? or less (not including zero).

Abstract: A pair of domain control layers are disposed on both sides of the track width direction of the MR film so as to be separated from each other such that the MR film is held therebetween, and apply a longitudinal magnetic field to the MR film (free layer). The MR film is flanked by the domain control layers, each including a layer structure constituted by a base layer, a ferromagnetic layer, and a hard magnetic layer. The base layer causes the hard magnetic layer to have a magnetization direction aligning with an in-plane direction, so as to enhance the coercive force of the hard magnetic layer.

Abstract: At both end portions of at least a soft magnetic layer of a magneto-resistive effect film, a pair of bias magnetic field applying layers are disposed for applying a longitudinal bias magnetic field to the soft magnetic layer via magnetic underlayers. Further, mutual lattice point-to-point distances in the plane where each magnetic underlayer and the corresponding bias magnetic field applying layer are mated, are substantially equalized to each other. Therefore, a coercive force Hc in an in-plane direction (direction parallel to a film surface) of each bias magnetic field applying layer can be maintained at a high level so that even when further gap narrowing or track narrowing is aimed, the bias magnetic field applying layers can act to apply an effective bias magnetic field, i.e. can act to suppress occurrence of the Barkhausen noise.