Patents by Inventor Tomoaki SUMI

Tomoaki SUMI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate
    Patent number: 11795573
    Abstract: A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NO2 gas, N2O gas, and N2O4 gas; and growing the group III nitride crystal on the seed substrate.
    Type: Grant
    Filed: June 28, 2021
    Date of Patent: October 24, 2023
    Assignees: OSAKA UNIVERSITY, PANASONIC HOLDINGS CORPORATION
    Inventors: Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Akira Kitamoto, Junichi Takino, Tomoaki Sumi, Yoshio Okayama
  • GROUP-III NITRIDE SUBSTRATE
    Publication number: 20230323563
    Abstract: A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.
    Type: Application
    Filed: June 14, 2023
    Publication date: October 12, 2023
    Applicant: Panasonic Holdings Corporation
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Masayuki IMANISHI, Akira KITAMOTO, Junichi TAKINO, Tomoaki SUMI, Yoshio OKAYAMA
  • Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containng gas at a supersation ratio of greater than 1 and equal to or less than 5
    Patent number: 11753739
    Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.
    Type: Grant
    Filed: September 20, 2021
    Date of Patent: September 12, 2023
    Assignees: PANASONIC HOLDINGS CORPORATION, OSAKA UNIVERSITY
    Inventors: Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Akira Kitamoto, Junichi Takino, Tomoaki Sumi
  • Group-III nitride substrate
    Patent number: 11713517
    Abstract: A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: August 1, 2023
    Assignee: PANASONIC HOLDINGS CORPORATION
    Inventors: Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Akira Kitamoto, Junichi Takino, Tomoaki Sumi, Yoshio Okayama
  • Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal
    Patent number: 11713516
    Abstract: A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and the concentration of the N-type dopant is 1×1020 cm?3 or more, and the concentration of the hydrogen element is 1×1019 cm?3 or more.
    Type: Grant
    Filed: June 7, 2021
    Date of Patent: August 1, 2023
    Assignee: PANASONIC HOLDINGS CORPORATION
    Inventors: Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Akira Kitamoto, Tomoaki Sumi, Junichi Takino, Yoshio Okayama
  • MOTOR CONTROL DEVICE
    Publication number: 20230114838
    Abstract: A motor control device executes fluctuation suppression control when a power supply voltage for driving a motor supplied from a power supply temporarily decreases and then increases to a normal power supply voltage after recovery. The fluctuation suppression control suppresses fluctuation in a rotation speed of the motor which is caused by following fluctuation in the power supply voltage.
    Type: Application
    Filed: December 14, 2022
    Publication date: April 13, 2023
    Inventor: TOMOAKI SUMI
  • Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal
    Patent number: 11624128
    Abstract: A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a germanium element, the concentration of the N-type dopant is 1×1019 cm?3 or more, and the concentration of the germanium element is nine times or more higher than the concentration of the N-type dopant.
    Type: Grant
    Filed: June 7, 2021
    Date of Patent: April 11, 2023
    Assignee: PANASONIC HOLDINGS CORPORATION
    Inventors: Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Akira Kitamoto, Tomoaki Sumi, Junichi Takino, Yoshio Okayama
  • Group-III nitride substrate containing carbon at a surface region thereof
    Patent number: 11396716
    Abstract: A group-III nitride substrate includes: a base material part of a group-III nitride including a front surface, a back surface, and an inner layer between the front surface and the back surface, wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: July 26, 2022
    Assignees: OSAKA UNIVERSITY, PANASONIC HOLDINGS CORPORATION
    Inventors: Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Akira Kitamoto, Junichi Takino, Tomoaki Sumi, Yoshio Okayama
  • METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL
    Publication number: 20220056614
    Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.
    Type: Application
    Filed: September 20, 2021
    Publication date: February 24, 2022
    Applicants: OSAKA UNIVERSITY, Panasonic Corporation
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Masayuki IMANISHI, Akira KITAMOTO, Junichi TAKINO, Tomoaki SUMI
  • METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL
    Publication number: 20220002904
    Abstract: A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NO2 gas, N2O gas, and N2O4 gas; and growing the group III nitride crystal on the seed substrate.
    Type: Application
    Filed: June 28, 2021
    Publication date: January 6, 2022
    Applicants: OSAKA UNIVERSITY, Panasonic Corporation
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Masayuki IMANISHI, Akira KITAMOTO, Junichi TAKINO, Tomoaki SUMI, Yoshio OKAYAMA
  • GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SUBSTRATE, AND METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL
    Publication number: 20210388528
    Abstract: A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a germanium element, the concentration of the N-type dopant is 1×1019 cm?3 or more, and the concentration of the germanium element is nine times or more higher than the concentration of the N-type dopant.
    Type: Application
    Filed: June 7, 2021
    Publication date: December 16, 2021
    Applicant: Panasonic Corporation
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Masayuki IMANISHI, Akira KITAMOTO, Tomoaki SUMI, Junichi TAKINO, Yoshio OKAYAMA
  • GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SUBSTRATE, AND METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL
    Publication number: 20210388529
    Abstract: A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and the concentration of the N-type dopant is 1×1020 cm?3 or more, and the concentration of the hydrogen element is 1×1019 cm?3 or more.
    Type: Application
    Filed: June 7, 2021
    Publication date: December 16, 2021
    Applicant: Panasonic Corporation
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Masayuki IMANISHI, Akira KITAMOTO, Tomoaki SUMI, Junichi TAKINO, Yoshio OKAYAMA
  • Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containing gas at a supersaturation ratio of greater than 1 and equal to or less than 5
    Patent number: 11155931
    Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.
    Type: Grant
    Filed: January 30, 2020
    Date of Patent: October 26, 2021
    Assignees: OSAKA UNIVERSITY, PANASONIC CORPORATION
    Inventors: Yusuke Mori, Masashi Yoshimura, Masayuki Imanishi, Akira Kitamoto, Junichi Takino, Tomoaki Sumi
  • GROUP-III NITRIDE SUBSTRATE
    Publication number: 20210087707
    Abstract: A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.
    Type: Application
    Filed: September 17, 2020
    Publication date: March 25, 2021
    Applicant: Panasonic Corporation
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Masayuki IMANISHI, Akira KITAMOTO, Junichi TAKINO, Tomoaki SUMI, Yoshio OKAYAMA
  • GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE
    Publication number: 20210006042
    Abstract: A group-III nitride semiconductor laser device includes a GaN substrate, and an active layer provided on the GaN substrate, in which the GaN substrate has an oxygen concentration of 5×1019 cm?3 or more, and an absorption coefficient of the GaN substrate with respect to an oscillation wavelength of the active layer is greater than an absorption coefficient of the active layer with respect to the oscillation wavelength.
    Type: Application
    Filed: June 25, 2020
    Publication date: January 7, 2021
    Inventors: AKIHIKO ISHIBASHI, HIROSHI OHNO, JUNICHI TAKINO, TOMOAKI SUMI
  • METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL
    Publication number: 20200255975
    Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.
    Type: Application
    Filed: January 30, 2020
    Publication date: August 13, 2020
    Applicants: OSAKA UNIVERSITY, Panasonic Corporation
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Masayuki IMANISHI, Akira KITAMOTO, Junichi TAKINO, Tomoaki SUMI
  • GROUP-III NITRIDE SUBSTRATE AND METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL
    Publication number: 20200017993
    Abstract: A group-III nitride substrate includes: a base material part of a group-III nitride including a front surface, a back surface, and an inner layer between the front surface and the back surface, wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer.
    Type: Application
    Filed: July 10, 2019
    Publication date: January 16, 2020
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Masayuki IMANISHI, Akira KITAMOTO, Junichi TAKINO, Tomoaki SUMI, Yoshio OKAYAMA