Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Abstract: A process of producing a fine-grained austenitic stainless steel, the process comprising a step of subjecting a fine-grained austenitic stainless steel comprising: C: 0.15 wt % or less, Si: 1.00 wt % or less, Mn: 2.0 wt % or less, Ni: 6.0 to 14.0 wt %, Cr: 16.0 to 22.0 wt %, and Mo: 3.0 wt % or less, with the balance being Fe and inevitable impurities, and having an average grain size of 10 ?m or lower, to an annealing treatment at a temperature from 600° C. to 700° C. for 48 hours or longer.

Abstract: Disclosed is a MIMO system including a transmitter and a receiver, in which an overall BER characteristic is improved. The transmitter (1) maps data, distributed among transmit antennas, onto an IQ plane to generate carrier symbols, and then, applies an inter-polarization interleave processing in a time direction to the carrier symbols between the transmit antennas, to generate OFDM signals. Receiving the OFDM signals, the receiver (2) demodulates the OFDM signals to generate complex baseband signals, and after that, applies a first deinterleave processing in a time direction to the complex baseband signals to generate time deinterleaved data. Further, the receiver (2) applies a MIMO separation processing to the time deinterleaved data to generate a plurality of sets of MIMO separated data and applies a second deinterleave processing between the receive antennas to the plurality of sets of MIMO separated data, so as to generate carrier symbols.

Abstract: An optical-detection element includes a p-type supporting-layer, an n-type buried charge-generation region to implement a photodiode with the supporting-layer, a p-type shield region buried in the buried charge-generation region, a gate insulating-film contacted with the shield region, a transparent electrode on the gate insulating-film, a p-type well region buried in the supporting-layer, and an n+-type charge-readout region buried in the supporting-layer at an edge of the well region toward the buried charge-generation region.

Abstract: A process of producing a fine-grained austenitic stainless steel, said process comprising a step of subjecting a fine-grained austenitic stainless steel comprising: C: 0.15 wt % or less, Si: 1.00 wt % or less, Mn: 2.0 wt % or less, Ni: 6.0 to 14.0 wt %, Cr: 16.0 to 22.0 wt %, and Mo: 3.0 wt % or less, with the balance being Fe and inevitable impurities, and having an average grain size of 10 ?m or lower, to an annealing treatment at a temperature from 600° C. to 700° C. for 48 hours or longer.

Abstract: An optical-detection element includes a p-type supporting-layer, an n-type buried charge-generation region to implement a photodiode with the supporting-layer, a p-type shield region buried in the buried charge-generation region, a gate insulating-film contacted with the shield region, a transparent electrode on the gate insulating-film, a p-type well region buried in the supporting-layer, and an n+-type charge-readout region buried in the supporting-layer at an edge of the well region toward the buried charge-generation region.

Abstract: Disclosed is a MIMO system including a transmitter and a receiver, in which an overall BER characteristic is improved. The transmitter (1) maps data, distributed among transmit antennas, onto an IQ plane to generate carrier symbols, and then, applies an inter-polarization interleave processing in a time direction to the carrier symbols between the transmit antennas, to generate OFDM signals. Receiving the OFDM signals, the receiver (2) demodulates the OFDM signals to generate complex baseband signals, and after that, applies a first deinterleave processing in a time direction to the complex baseband signals to generate time deinterleaved data. Further, the receiver (2) applies a MIMO separation processing to the time deinterleaved data to generate a plurality of sets of MIMO separated data and applies a second deinterleave processing between the receive antennas to the plurality of sets of MIMO separated data, so as to generate carrier symbols.

Abstract: A radiation tolerant optical detection element includes: a p-type base-body region; a gate insulating film provided on an upper surface of the base-body region; an n-type buried charge-generation region buried in an upper portion of the base-body region; an n-type charge-readout region buried in an upper portion of the base-body region on the inner-contour side of the buried charge-generation region; an n-type reset-drain region buried on the inner-contour side of the charge-readout region; a transparent electrode provided on the gate insulating film above the buried charge-generation region; and a reset-gate electrode provided on a portion of the gate insulating film between the charge-readout region and the reset-drain region.

Abstract: Disclosed is a MIMO system including a transmitter and a receiver, in which an overall BER characteristic is improved. The transmitter (1) maps data, distributed among transmit antennas, onto an IQ plane to generate carrier symbols, and then, applies an inter-polarization interleave processing in a time direction to the carrier symbols between the transmit antennas, to generate OFDM signals. Receiving the OFDM signals, the receiver (2) demodulates the OFDM signals to generate complex baseband signals, and after that, applies a first deinterleave processing in a time direction to the complex baseband signals to generate time deinterleaved data. Further, the receiver (2) applies a MIMO separation processing to the time deinterleaved data to generate a plurality of sets of MIMO separated data and applies a second deinterleave processing between the receive antennas to the plurality of sets of MIMO separated data, so as to generate carrier symbols.

Abstract: Disclosed is a MIMO system including a transmitter and a receiver, in which an overall BER characteristic is improved. The transmitter (1) maps data, distributed among transmit antennas, onto an IQ plane to generate carrier symbols, and then, applies an inter-polarization interleave processing in a time direction to the carrier symbols between the transmit antennas, to generate OFDM signals. Receiving the OFDM signals, the receiver (2) demodulates the OFDM signals to generate complex baseband signals, and after that, applies a first deinterleave processing in a time direction to the complex baseband signals to generate time deinterleaved data. Further, the receiver (2) applies a MIMO separation processing to the time deinterleaved data to generate a plurality of sets of MIMO separated data and applies a second deinterleave processing between the receive antennas to the plurality of sets of MIMO separated data, so as to generate carrier symbols.

Abstract: A radiation tolerant optical detection element includes: a p-type base-body region; a gate insulating film provided on an upper surface of the base-body region; an n-type buried charge-generation region buried in an upper portion of the base-body region; an n-type charge-readout region buried in an upper portion of the base-body region on the inner-contour side of the buried charge-generation region; an n-type reset-drain region buried on the inner-contour side of the charge-readout region; a transparent electrode provided on the gate insulating film above the buried charge-generation region; and a reset-gate electrode provided on a portion of the gate insulating film between the charge-readout region and the reset-drain region.

Abstract: A self-powered gamma detector which can hold the influence of neutron rays to the minimum, and can measure the dose of gamma rays accurately under a high neutron environment in the reactor is disclosed. The self-powered gamma detector has a columnar emitter member; a collector member arranged in surroundings of the emitter member through an insulating member, and the strength of gamma rays is measured by detecting the value of a current which flows between the emitter member and an MI cable connected with the emitter member, and the collector member. Especially, the emitter member consists of pure tungsten (W), whose inevitable impurities is in 0.03 percent by weight or less.

Abstract: A self-powered gamma detector which can hold the influence of neutron rays to the minimum, and can measure the dose of gamma rays accurately under a high neutron environment in the reactor is disclosed. The self-powered gamma detector has a columnar emitter member; a collector member arranged in surroundings of the emitter member through an insulating member, and the strength of gamma rays is measured by detecting the value of a current which flows between the emitter member and an MI cable connected with the emitter member, and the collector member. Especially, the emitter member consists of pure tungsten (W), whose inevitable impurities is in 0.03 percent by weight or less.

Abstract: A semiconductor wafer transfer equipment transfers a plurality of semiconductor wafers, held in grooves of carriers in an erected state, to a boat using first and second wafer elevators equipped with a comb-teeth portion and a wafer grip and transfer unit. The first and second wafer elevators correspond to the carriers and the boat and are equipped with a position correction mechanism which corrects positions of comb-teeth openings of comb-teeth members provided on the comb-teeth portion, corresponding to semiconductor wafers housed in the grooves of the carriers.

Abstract: A semiconductor wafer transfer equipment transfers a number of semiconductor wafers 51 that are held in grooves 52 of carriers 53 in the erected state to boat 54 using first and second wafer elevators 22 and 23 equipped with comb-teeth member 31 and wafer grip and transfer unit 24, and first and second wafer elevators 22 and 23 provided corresponding to carriers 53 and boats 54 are equipped with position correction mechanism 30 which corrects the positions of comb-teeth openings 34 of comb shape members 32 and 33 provided to comb-teeth members 31 corresponding to semiconductor wafers 51 housed in grooves 52 of carriers 53.