Patents by Inventor Tomoaki Takeuchi

Tomoaki Takeuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10771132
    Abstract: Disclosed is a MIMO system including a transmitter and a receiver, in which an overall BER characteristic is improved. The transmitter (1) maps data, distributed among transmit antennas, onto an IQ plane to generate carrier symbols, and then, applies an inter-polarization interleave processing in a time direction to the carrier symbols between the transmit antennas, to generate OFDM signals. Receiving the OFDM signals, the receiver (2) demodulates the OFDM signals to generate complex baseband signals, and after that, applies a first deinterleave processing in a time direction to the complex baseband signals to generate time deinterleaved data. Further, the receiver (2) applies a MIMO separation processing to the time deinterleaved data to generate a plurality of sets of MIMO separated data and applies a second deinterleave processing between the receive antennas to the plurality of sets of MIMO separated data, so as to generate carrier symbols.
    Type: Grant
    Filed: February 9, 2016
    Date of Patent: September 8, 2020
    Assignees: NIPPON HOSO KYOKAI, NHK Engineering System, Inc.
    Inventors: Shingo Asakura, Madoka Honda, Kenichi Murayama, Takuya Shitomi, Susumu Saito, Yoshikazu Narikiyo, Hiroaki Miyasaka, Akihiko Satou, Tomoaki Takeuchi, Kenichi Tsuchida, Masahiro Okano, Masayuki Takada, Kazuhiko Shibuya
  • Patent number: 10652488
    Abstract: An optical-detection element includes a p-type supporting-layer, an n-type buried charge-generation region to implement a photodiode with the supporting-layer, a p-type shield region buried in the buried charge-generation region, a gate insulating-film contacted with the shield region, a transparent electrode on the gate insulating-film, a p-type well region buried in the supporting-layer, and an n+-type charge-readout region buried in the supporting-layer at an edge of the well region toward the buried charge-generation region.
    Type: Grant
    Filed: March 30, 2018
    Date of Patent: May 12, 2020
    Assignees: BROOKMAN TECHNOLOGY, INC., IKEGAMI TSUSHINKI CO., LTD., JAPAN ATOMIC ENERGY AGENCY
    Inventors: Takashi Watanabe, Osamu Ozawa, Kunihiko Tsuchiya, Tomoaki Takeuchi
  • Publication number: 20200102625
    Abstract: A process of producing a fine-grained austenitic stainless steel, said process comprising a step of subjecting a fine-grained austenitic stainless steel comprising: C: 0.15 wt % or less, Si: 1.00 wt % or less, Mn: 2.0 wt % or less, Ni: 6.0 to 14.0 wt %, Cr: 16.0 to 22.0 wt %, and Mo: 3.0 wt % or less, with the balance being Fe and inevitable impurities, and having an average grain size of 10 ?m or lower, to an annealing treatment at a temperature from 600° C. to 700° C. for 48 hours or longer.
    Type: Application
    Filed: September 23, 2019
    Publication date: April 2, 2020
    Applicant: JAPAN ATOMIC ENERGY AGENCY
    Inventors: Noriaki HIROTA, Tomoaki TAKEUCHI, Hiroko NAKANO, Atsushi KIKUCHI
  • Publication number: 20180302581
    Abstract: An optical-detection element includes a p-type supporting-layer, an n-type buried charge-generation region to implement a photodiode with the supporting-layer, a p-type shield region buried in the buried charge-generation region, a gate insulating-film contacted with the shield region, a transparent electrode on the gate insulating-film, a p-type well region buried in the supporting-layer, and an n+-type charge-readout region buried in the supporting-layer at an edge of the well region toward the buried charge-generation region.
    Type: Application
    Filed: March 30, 2018
    Publication date: October 18, 2018
    Applicants: BROOKMAN TECHNOLOGY, INC., IKEGAMI TSUSHINKI CO., LTD., JAPAN ATOMIC ENERGY AGENCY
    Inventors: Takashi Watanabe, Osamu Ozawa, Kunihiko Tsuchiya, Tomoaki Takeuchi
  • Patent number: 10009078
    Abstract: Disclosed is a MIMO system including a transmitter and a receiver, in which an overall BER characteristic is improved. The transmitter (1) maps data, distributed among transmit antennas, onto an IQ plane to generate carrier symbols, and then, applies an inter-polarization interleave processing in a time direction to the carrier symbols between the transmit antennas, to generate OFDM signals. Receiving the OFDM signals, the receiver (2) demodulates the OFDM signals to generate complex baseband signals, and after that, applies a first deinterleave processing in a time direction to the complex baseband signals to generate time deinterleaved data. Further, the receiver (2) applies a MIMO separation processing to the time deinterleaved data to generate a plurality of sets of MIMO separated data and applies a second deinterleave processing between the receive antennas to the plurality of sets of MIMO separated data, so as to generate carrier symbols.
    Type: Grant
    Filed: February 9, 2016
    Date of Patent: June 26, 2018
    Assignees: NIPPON HOSO KYOKAI, NHK Engineering System, Inc.
    Inventors: Shingo Asakura, Madoka Honda, Kenichi Murayama, Takuya Shitomi, Susumu Saito, Yoshikazu Narikiyo, Hiroaki Miyasaka, Akihiko Satou, Tomoaki Takeuchi, Kenichi Tsuchida, Masahiro Okano, Masayuki Takada, Kazuhiko Shibuya
  • Patent number: 9923006
    Abstract: A radiation tolerant optical detection element includes: a p-type base-body region; a gate insulating film provided on an upper surface of the base-body region; an n-type buried charge-generation region buried in an upper portion of the base-body region; an n-type charge-readout region buried in an upper portion of the base-body region on the inner-contour side of the buried charge-generation region; an n-type reset-drain region buried on the inner-contour side of the charge-readout region; a transparent electrode provided on the gate insulating film above the buried charge-generation region; and a reset-gate electrode provided on a portion of the gate insulating film between the charge-readout region and the reset-drain region.
    Type: Grant
    Filed: January 23, 2017
    Date of Patent: March 20, 2018
    Assignees: BROOKMAN TECHNOLOGY, INC., IKEGAMI TSUSHINKI CO., LTD., JAPAN ATOMIC ENERGY AGENCY
    Inventors: Takashi Watanabe, Tomohiro Kamiyanagi, Kunihiko Tsuchiya, Tomoaki Takeuchi
  • Publication number: 20180038942
    Abstract: Disclosed is a MIMO system including a transmitter and a receiver, in which an overall BER characteristic is improved. The transmitter (1) maps data, distributed among transmit antennas, onto an IQ plane to generate carrier symbols, and then, applies an inter-polarization interleave processing in a time direction to the carrier symbols between the transmit antennas, to generate OFDM signals. Receiving the OFDM signals, the receiver (2) demodulates the OFDM signals to generate complex baseband signals, and after that, applies a first deinterleave processing in a time direction to the complex baseband signals to generate time deinterleaved data. Further, the receiver (2) applies a MIMO separation processing to the time deinterleaved data to generate a plurality of sets of MIMO separated data and applies a second deinterleave processing between the receive antennas to the plurality of sets of MIMO separated data, so as to generate carrier symbols.
    Type: Application
    Filed: February 9, 2016
    Publication date: February 8, 2018
    Applicants: NIPPON HOSO KYOKAI, NHK Engineering System, Inc.
    Inventors: Shingo ASAKURA, Madoka HONDA, Kenichi MURAYAMA, Takuya SHITOMI, Susumu SAITO, Yoshikazu NARIKIYO, Hiroaki MIYASAKA, Akihiko SATOU, Tomoaki TAKEUCHI, Kenichi TSUCHIDA, Masahiro OKANO, Masayuki TAKADA, Kazuhiko SHIBUYA
  • Publication number: 20180034521
    Abstract: Disclosed is a MIMO system including a transmitter and a receiver, in which an overall BER characteristic is improved. The transmitter (1) maps data, distributed among transmit antennas, onto an IQ plane to generate carrier symbols, and then, applies an inter-polarization interleave processing in a time direction to the carrier symbols between the transmit antennas, to generate OFDM signals. Receiving the OFDM signals, the receiver (2) demodulates the OFDM signals to generate complex baseband signals, and after that, applies a first deinterleave processing in a time direction to the complex baseband signals to generate time deinterleaved data. Further, the receiver (2) applies a MIMO separation processing to the time deinterleaved data to generate a plurality of sets of MIMO separated data and applies a second deinterleave processing between the receive antennas to the plurality of sets of MIMO separated data, so as to generate carrier symbols.
    Type: Application
    Filed: February 9, 2016
    Publication date: February 1, 2018
    Applicants: NIPPON HOSO KYOKAI, NHK Engineering System, Inc.
    Inventors: Shingo ASAKURA, Madoka HONDA, Kenichi MURAYAMA, Takuya SHITOMI, Susumu SAITO, Yoshikazu NARIKIYO, Hiroaki MIYASAKA, Akihiko SATOU, Tomoaki TAKEUCHI, Kenichi TSUCHIDA, Masahiro OKANO, Masayuki TAKADA, Kazuhiko SHIBUYA
  • Publication number: 20170133419
    Abstract: A radiation tolerant optical detection element includes: a p-type base-body region; a gate insulating film provided on an upper surface of the base-body region; an n-type buried charge-generation region buried in an upper portion of the base-body region; an n-type charge-readout region buried in an upper portion of the base-body region on the inner-contour side of the buried charge-generation region; an n-type reset-drain region buried on the inner-contour side of the charge-readout region; a transparent electrode provided on the gate insulating film above the buried charge-generation region; and a reset-gate electrode provided on a portion of the gate insulating film between the charge-readout region and the reset-drain region.
    Type: Application
    Filed: January 23, 2017
    Publication date: May 11, 2017
    Applicants: BROOKMAN TECHNOLOGY, INC., IKEGAMI TSUSHINKI CO., LTD., JAPAN ATOMIC ENERGY AGENCY
    Inventors: Takashi WATANABE, Tomohiro KAMIYANAGI, Kunihiko TSUCHIYA, Tomoaki TAKEUCHI
  • Patent number: 9046611
    Abstract: A self-powered gamma detector which can hold the influence of neutron rays to the minimum, and can measure the dose of gamma rays accurately under a high neutron environment in the reactor is disclosed. The self-powered gamma detector has a columnar emitter member; a collector member arranged in surroundings of the emitter member through an insulating member, and the strength of gamma rays is measured by detecting the value of a current which flows between the emitter member and an MI cable connected with the emitter member, and the collector member. Especially, the emitter member consists of pure tungsten (W), whose inevitable impurities is in 0.03 percent by weight or less.
    Type: Grant
    Filed: October 11, 2013
    Date of Patent: June 2, 2015
    Assignees: Japan Atomic Energy Agency, Sukegawa Electric Co., Ltd.
    Inventors: Tomoaki Takeuchi, Hiroshi Nagata, Noriaki Ohtsuka, Akira Shibata, Kunihiko Tsuchiya, Kuniaki Miura, Hiroshi Yamamoto
  • Publication number: 20140110578
    Abstract: A self-powered gamma detector which can hold the influence of neutron rays to the minimum, and can measure the dose of gamma rays accurately under a high neutron environment in the reactor is disclosed. The self-powered gamma detector has a columnar emitter member; a collector member arranged in surroundings of the emitter member through an insulating member, and the strength of gamma rays is measured by detecting the value of a current which flows between the emitter member and an MI cable connected with the emitter member, and the collector member. Especially, the emitter member consists of pure tungsten (W), whose inevitable impurities is in 0.03 percent by weight or less.
    Type: Application
    Filed: October 11, 2013
    Publication date: April 24, 2014
    Applicants: SUKEGAWA ELECTRIC CO., LTD., JAPAN ATOMIC ENERGY AGENCY
    Inventors: Tomoaki TAKEUCHI, Hiroshi NAGATA, Noriaki OHTSUKA, Akira SHIBATA, Kunihiko TSUCHIYA, Kuniaki MIURA, Hiroshi YAMAMOTO
  • Patent number: 7172383
    Abstract: A semiconductor wafer transfer equipment transfers a plurality of semiconductor wafers, held in grooves of carriers in an erected state, to a boat using first and second wafer elevators equipped with a comb-teeth portion and a wafer grip and transfer unit. The first and second wafer elevators correspond to the carriers and the boat and are equipped with a position correction mechanism which corrects positions of comb-teeth openings of comb-teeth members provided on the comb-teeth portion, corresponding to semiconductor wafers housed in the grooves of the carriers.
    Type: Grant
    Filed: June 23, 2004
    Date of Patent: February 6, 2007
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koji Fujii, Tomoaki Takeuchi
  • Publication number: 20050036862
    Abstract: A semiconductor wafer transfer equipment transfers a number of semiconductor wafers 51 that are held in grooves 52 of carriers 53 in the erected state to boat 54 using first and second wafer elevators 22 and 23 equipped with comb-teeth member 31 and wafer grip and transfer unit 24, and first and second wafer elevators 22 and 23 provided corresponding to carriers 53 and boats 54 are equipped with position correction mechanism 30 which corrects the positions of comb-teeth openings 34 of comb shape members 32 and 33 provided to comb-teeth members 31 corresponding to semiconductor wafers 51 housed in grooves 52 of carriers 53.
    Type: Application
    Filed: June 23, 2004
    Publication date: February 17, 2005
    Inventors: Koji Fujii, Tomoaki Takeuchi