Patents by Inventor Tomoaki Yamabayashi
Tomoaki Yamabayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8716762Abstract: Disclosed are: a biosensor kit in which a bionsensor utilizing a field effect transistor is not deteriorated during storage or transport; and a system for detecting a substance of interest, which is equipped with the biosensor chip. The biosensor kit comprises a biosensor chip which can measure a substance of interest quantitatively and a package which can hermetically seal the biosensor chip and is composed of a packaging material comprising a metal film. The biosensor chip can measure the substance quantitatively based on the value of a current generated in a field effect transistor when the substance is reacted with a molecule that can recognize the substance and is immobilized on a reaction field connected to the field effect transistor. The biosensor chip comprises the field effect transistor and a mounting substrate on which the field effect transistor is mounted.Type: GrantFiled: March 15, 2011Date of Patent: May 6, 2014Assignee: Mitsumi Electric Co., Ltd.Inventors: Mitsuru Sakamoto, Hirohiko Urushiyama, Hiroaki Kikuchi, Tomoaki Yamabayashi
-
Patent number: 8710554Abstract: Disclosed are: a biosensor kit in which a biosensor utilizing a field effect transistor is not deteriorated during storage or transport; and a system for detecting a substance of interest, which is equipped with the biosensor chip. The biosensor kit comprises a biosensor chip which can measure a substance of interest quantitatively and a package which can hermetically seal the biosensor chip and is composed of a packaging material comprising a metal film. The biosensor chip can measure the substance quantitatively based on the value of a current generated in a field effect transistor when the substance is reacted with a molecule that can recognize the substance and is immobilized on a reaction field connected to the field effect transistor. The biosensor chip comprises the field effect transistor and a mounting substrate on which the field effect transistor is mounted.Type: GrantFiled: September 19, 2013Date of Patent: April 29, 2014Assignee: Mitsumi Electric, Co., Ltd.Inventors: Mitsuru Sakamoto, Hirohiko Urushiyama, Hiroaki Kikuchi, Tomoaki Yamabayashi
-
Patent number: 8698210Abstract: Provided is a sensor having a high sensitivity and a high degree of freedom of layout by reducing constrictions of the channel shape, the reaction field area, and the position. Provided is also a method for manufacturing the sensor. The sensor (10) includes: a source electrode (15), a drain electrode, (14), and a gate electrode (13) arranged on silicon oxide film (12a, 12b); a channel (16) arranged on the silicon oxide films (12a, 12b) and electrically connected to the source electrode (15) and the drain electrode (14); and a reaction field (20) arranged on the silicon oxide films (12a, 12b). The reaction field (20) is formed at a position on the silicon oxide film (12a), the position being different from a position for the channel (16). With this configuration, it is possible to independently select the shape of the channel (16) and the area of the reaction field (20). This enables the sensor (10) to have a high measurement sensitivity and a high degree of freedom of layout.Type: GrantFiled: May 13, 2009Date of Patent: April 15, 2014Assignee: Mitsumi Electric, Co., Ltd.Inventors: Tomoaki Yamabayashi, Osamu Takahashi, Katsunori Kondo, Hiroaki Kikuchi
-
Publication number: 20140017146Abstract: Disclosed are: a biosensor kit in which a biosensor utilizing a field effect transistor is not deteriorated during storage or transport; and a system for detecting a substance of interest, which is equipped with the biosensor chip. The biosensor kit comprises a biosensor chip which can measure a substance of interest quantitatively and a package which can hermetically seal the biosensor chip and is composed of a packaging material comprising a metal film. The biosensor chip can measure the substance quantitatively based on the value of a current generated in a field effect transistor when the substance is reacted with a molecule that can recognize the substance and is immobilized on a reaction field connected to the field effect transistor. The biosensor chip comprises the field effect transistor and a mounting substrate on which the field effect transistor is mounted.Type: ApplicationFiled: September 19, 2013Publication date: January 16, 2014Applicant: MITSUMI ELECTRIC CO., LTD.Inventors: Mitsuru SAKAMOTO, Hirohiko URUSHIYAMA, Hiroaki KIKUCHI, Tomoaki YAMABAYASHI
-
Patent number: 8487297Abstract: Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively.Type: GrantFiled: December 25, 2009Date of Patent: July 16, 2013Assignees: Mitsumi Electric Co., Ltd., Arkray, inc.Inventors: Agus Subagyo, Motonori Nakamura, Tomoaki Yamabayashi, Osamu Takahashi, Hiroaki Kikuchi, Katsunori Kondo
-
Publication number: 20130028789Abstract: Disclosed are: a biosensor kit in which a bionsensor utilizing a field effect transistor is not deteriorated during storage or transport; and a system for detecting a substance of interest, which is equipped with the biosensor chip. The biosensor kit comprises a biosensor chip which can measure a substance of interest quantitatively and a package which can hermetically seal the biosensor chip and is composed of a packaging material comprising a metal film. The biosensor chip can measure the substance quantitatively based on the value of a current generated in a field effect transistor when the substance is reacted with a molecule that can recognize the substance and is immobilized on a reaction field connected to the field effect transistor. The biosensor chip comprises the field effect transistor and a mounting substrate on which the field effect transistor is mounted.Type: ApplicationFiled: March 15, 2011Publication date: January 31, 2013Inventors: Mitsuru Sakamoto, Hirohiko Urushiyama, Hiroaki Kikuchi, Tomoaki Yamabayashi
-
Patent number: 8288804Abstract: Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited.Type: GrantFiled: May 22, 2009Date of Patent: October 16, 2012Assignee: Mitsumi Electric Co., Ltd.Inventors: Hiroaki Kikuchi, Osamu Takahashi, Katsunori Kondo, Tomoaki Yamabayashi, Kunio Ogasawara, Tadashi Ishigaki, Yutaka Hienuki, Motonori Nakamura, Agus Subagyo
-
Patent number: 8236639Abstract: A semiconductor device manufacturing method is a method of forming a semiconductor device that includes a cell part that includes plural transistor cells in each of which a gate of a trench type is formed in a semiconductor layer, and diffused layers are formed on both sides of the gate, and a guard ring part that surrounds the cell part. The semiconductor device manufacturing method includes forming an interlayer dielectric film on a surface of the semiconductor layer in which the gate and the diffused layers are formed; reducing a thickness of the interlayer dielectric film formed in the cell part through etch back; forming a contact part having a shape of a hole or a groove in the interlayer dielectric film at a position above the diffused layer; and forming a metal film on the interlayer dialectic film.Type: GrantFiled: March 24, 2011Date of Patent: August 7, 2012Assignee: Mitsumi Electric Co., Ltd.Inventors: Hiroaki Kikuchi, Katsunori Kondo, Shigeru Shinohara, Osamu Takahashi, Tomoaki Yamabayashi
-
Patent number: 8148213Abstract: A method for manufacturing a biosensor includes forming a laminate of a first silicon oxide film and a polysilicon film on one surface of a silicon substrate; forming a second silicon oxide film on the other surface of the silicon substrate; forming a source electrode, a drain electrode, and a channel on the first silicon oxide film, the channel connecting the source electrode and the drain electrode; and removing the polysilicon film.Type: GrantFiled: February 16, 2011Date of Patent: April 3, 2012Assignee: Mitsumi Electric Co., Ltd.Inventors: Hiroaki Kikuchi, Tomoaki Yamabayashi, Osamu Takahashi
-
Publication number: 20110291075Abstract: Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively.Type: ApplicationFiled: December 25, 2009Publication date: December 1, 2011Inventors: Agus Subagyo, Motonori Nakamura, Tomoaki Yamabayashi, Osamu Takahashi, Hiroaki Kikuchi, Katsunori Kondo
-
Publication number: 20110248698Abstract: A biosensor includes at least two field effect transistor devices, each including a silicon substrate, a silicon oxide film formed on a surface of the silicon substrate, a source electrode disposed on the silicon oxide film, a drain electrode disposed on the silicon oxide film, a channel for connecting the source electrode and the drain electrode, and a gate electrode capable of controlling the channel, wherein one of the at least two field effect transistor devices is provided with a reaction field on which a target recognition molecule is to be immobilized, and the other one of the at least two field effect transistor devices is provided with a reaction field on which a target recognition molecule is not to be immobilized.Type: ApplicationFiled: April 6, 2011Publication date: October 13, 2011Inventors: Hiroaki Kikuchi, Tomoaki Yamabayashi, Osamu Takahashi
-
Publication number: 20110244638Abstract: A semiconductor device manufacturing method is a method of forming a semiconductor device that includes a cell part that includes plural transistor cells in each of which a gate of a trench type is formed in a semiconductor layer, and diffused layers are formed on both sides of the gate, and a guard ring part that surrounds the cell part. The semiconductor device manufacturing method includes forming an interlayer dielectric film on a surface of the semiconductor layer in which the gate and the diffused layers are formed; reducing a thickness of the interlayer dielectric film formed in the cell part through etch back; forming a contact part having a shape of a hole or a groove in the interlayer dielectric film at a position above the diffused layer; and forming a metal film on the interlayer dialectic film.Type: ApplicationFiled: March 24, 2011Publication date: October 6, 2011Applicant: MITSUMI ELECTRIC CO., LTD.Inventors: Hiroaki KIKUCHI, Katsunori KONDO, Shigeru SHINOHARA, Osamu TAKAHASHI, Tomoaki YAMABAYASHI
-
Publication number: 20110212562Abstract: A method for manufacturing a biosensor includes forming a laminate of a first silicon oxide film and a polysilicon film on one surface of a silicon substrate; forming a second silicon oxide film on the other surface of the silicon substrate; forming a source electrode, a drain electrode, and a channel on the first silicon oxide film, the channel connecting the source electrode and the drain electrode; and removing the polysilicon film.Type: ApplicationFiled: February 16, 2011Publication date: September 1, 2011Applicant: MITSUMI ELECTRIC CO., LTD.Inventors: Hiroaki KIKUCHI, Tomoaki YAMABAYASHI, Osamu TAKAHASHI
-
Publication number: 20110062419Abstract: Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited.Type: ApplicationFiled: May 22, 2009Publication date: March 17, 2011Inventors: Hiroaki Kikuchi, Osamu Takahashi, Katsunori Kondo, Tomoaki Yamabayashi, Kunio Ogasawara, Tadashi Ishigaki, Yutaka Hienuki, Motonori Nakamura, Agus Subagyo
-
Publication number: 20110042673Abstract: Provided is a sensor having a high sensitivity and a high degree of freedom of layout by reducing constrictions of the channel shape, the reaction field area, and the position. Provided is also a method for manufacturing the sensor. The sensor (10) includes: a source electrode (15), a drain electrode, (14), and a gate electrode (13) arranged on silicon oxide film (12a, 12b); a channel (16) arranged on the silicon oxide films (12a, 12b) and electrically connected to the source electrode (15) and the drain electrode (14); and a reaction field (20) arranged on the silicon oxide films (12a, 12b). The reaction field (20) is formed at a position on the silicon oxide film (12a), the position being different from a position for the channel (16). With this configuration, it is possible to independently select the shape of the channel (16) and the area of the reaction field (20). This enables the sensor (10) to have a high measurement sensitivity and a high degree of freedom of layout.Type: ApplicationFiled: May 13, 2009Publication date: February 24, 2011Inventors: Tomoaki Yamabayashi, Osamu Takahashi, Katsunori Kondo, Hiroaki Kikuchi