Abstract: A signal processing circuit includes a chopper amplifier that has a differential amplifier circuit that amplifies differential input signals Vsp(t) and Vsm(t), and an adder circuit that generates an addition signal Vfil(t) by addition of the chopper output signal Vsub(t) that the chopper amplifier generates. Differential signals inputted into the differential amplifier circuit are interchanged for every first phase period and second phase period, and the adder circuit generates the addition signal by addition of the chopper output signal in the first phase period and in the second phase period.

Abstract: A signal processing circuit includes a chopper amplifier that has a differential amplifier circuit that amplifies differential input signals Vsp(t) and Vsm(t), and an adder circuit that generates an addition signal Vfil(t) by addition of the chopper output signal Vsub(t) that the chopper amplifier generates. Differential signals inputted into the differential amplifier circuit are interchanged for every first phase period and second phase period, and the adder circuit generates the addition signal by addition of the chopper output signal in the first phase period and in the second phase period.

Abstract: A signal processing circuit includes a chopper amplifier that has a differential amplifier circuit that amplifies differential input signals Vsp(t) and Vsm(t), and an adder circuit that generates an addition signal Vfil(t) by addition of the chopper output signal Vsub(t) that the chopper amplifier generates. Differential signals inputted into the differential amplifier circuit are interchanged for every first phase period and second phase period, and the adder circuit generates the addition signal by addition of the chopper output signal in the first phase period and in the second phase period.

Abstract: A signal processing circuit includes a chopper amplifier that has a differential amplifier circuit that amplifies differential input signals Vsp(t) and Vsm(t), and an adder circuit that generates an addition signal Vfil(t) by addition of the chopper output signal Vsub(t) that the chopper amplifier generates. Differential signals inputted into the differential amplifier circuit are interchanged for every first phase period and second phase period, and the adder circuit generates the addition signal by addition of the chopper output signal in the first phase period and in the second phase period.

Abstract: A dummy circuit including a plurality of dummy cells is provided in correspondence to a predetermined number of word lines. When either one of corresponding word lines are selected, a dummy bit line equal in load to a normal bit line is driven using the plurality of dummy cells included in this dummy circuit. A potential of this dummy bit line is detected by a dummy sense amplifier, and a sense enable signal is generated. Therefore, it is possible to accurately detect a sense timing irrespectively of array architecture.

Abstract: A dummy circuit including a plurality of dummy cells is provided in correspondence to a predetermined number of word lines. When either one of corresponding word lines are selected, a dummy bit line equal in load to a normal bit line is driven using the plurality of dummy cells included in this dummy circuit. A potential of this dummy bit line is detected by a dummy sense amplifier, and a sense enable signal is generated. Therefore, it is possible to accurately detect a sense timing irrespectively of array architecture.

Abstract: A memory cell has two cross-coupled inverters each formed from a load transistor and a drive transistor. In the memory cell, the gates of the load transistor and the drive transistor are electrically coupled to the same gate line having a poly-metal gate structure. In the memory cell, a potential change at a storage node corresponding to an output node of one inverter is transmitted to the gate of the load transistor of the other inverter through a contact resistance at the interface between a silicon layer and a metal layer of the poly-metal structure.

Abstract: A memory cell has two cross-coupled inverters each formed from a load transistor and a drive transistor. In the memory cell, the gates of the load transistor and the drive transistor are electrically coupled to the same gate line having a poly-metal gate structure. In the memory cell, a potential change at a storage node corresponding to an output node of one inverter is transmitted to the gate of the load transistor of the other inverter through a contact resistance at the interface between a silicon layer and a metal layer of the poly-metal structure.