Patents by Inventor Tomochika TANIKAWA

Tomochika TANIKAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • P-type oxide semiconductor and method for manufacturing same
    Patent number: 11916103
    Abstract: A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.
    Type: Grant
    Filed: July 18, 2022
    Date of Patent: February 27, 2024
    Assignees: FLOSFIA INC., KYOTO UNIVERSITY
    Inventors: Shizuo Fujita, Kentaro Kaneko, Toshimi Hitora, Tomochika Tanikawa
  • P-TYPE OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING SAME
    Publication number: 20220352303
    Abstract: A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.
    Type: Application
    Filed: July 18, 2022
    Publication date: November 3, 2022
    Inventors: Shizuo FUJITA, Kentaro KANEKO, Toshimi HITORA, Tomochika TANIKAWA
  • P-type oxide semiconductor and method for manufacturing same
    Patent number: 11424320
    Abstract: A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: August 23, 2022
    Assignees: FLOSFIA INC., KYOTO UNIVERSITY
    Inventors: Shizuo Fujita, Kentaro Kaneko, Toshimi Hitora, Tomochika Tanikawa
  • Oxide semiconductor film and method for producing same
    Patent number: 11107926
    Abstract: A new and useful oxide semiconductor film with enhanced p-type semiconductor property and the method of manufacturing the oxide semiconductor film are provided. A method of manufacturing an oxide semiconductor film including: generating atomized droplets by atomizing a raw material solution containing a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table and a p-type dopant; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under oxygen atmosphere to form the oxide semiconductor film on the base.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: August 31, 2021
    Assignee: FLOSFIA INC.
    Inventors: Tomochika Tanikawa, Toshimi Hitora
  • OXIDE SEMICONDUCTOR FILM AND METHOD FOR PRODUCING SAME
    Publication number: 20190157400
    Abstract: A new and useful oxide semiconductor film with enhanced p-type semiconductor property and the method of manufacturing the oxide semiconductor film are provided. A method of manufacturing an oxide semiconductor film including: generating atomized droplets by atomizing a raw material solution containing a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table and a p-type dopant; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under oxygen atmosphere to form the oxide semiconductor film on the base.
    Type: Application
    Filed: June 30, 2017
    Publication date: May 23, 2019
    Applicant: FLOSFIA INC.
    Inventors: Tomochika TANIKAWA, Toshimi HITORA
  • P-TYPE OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING SAME
    Publication number: 20190157380
    Abstract: A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.
    Type: Application
    Filed: June 30, 2017
    Publication date: May 23, 2019
    Applicants: FLOSFIA INC., KYOTO UNIVERSITY
    Inventors: Shizuo FUJITA, Kentaro KANEKO, Toshimi HITORA, Tomochika TANIKAWA