Abstract: The pressure sensitive adhesive tape for semiconductor processing of the present invention is a pressure sensitive adhesive tape for semiconductor processing, which, in a step of grinding a back face of a semiconductor wafer having a groove formed on a front face thereof or having a modified region formed therein to singulate the semiconductor wafer into semiconductor chips, is stuck on the front face of the semiconductor wafer and used, the pressure sensitive adhesive tape for semiconductor processing including a base, a buffer layer provided on one face of the base, and a pressure sensitive adhesive layer provided on the other face of the base, and having a ratio (D2/D1) of a thickness (D2) of the buffer layer to a thickness (D1) of the base of 0.7 or less and an indentation depth (X) of the front face on the buffer layer side of 2.5 ?m or less.

Abstract: The pressure sensitive adhesive tape for semiconductor processing of the present invention is a pressure sensitive adhesive tape for semiconductor processing, which, in a step of grinding a back face of a semiconductor wafer having a groove formed on a front face thereof or having a modified region formed therein to singulate the semiconductor wafer into semiconductor chips, is stuck on the front face of the semiconductor wafer and used, the pressure sensitive adhesive tape for semiconductor processing including a base, a buffer layer provided on one face of the base, and a pressure sensitive adhesive layer provided on the other face of the base, and having a ratio (D2/D1) of a thickness (D2) of the buffer layer to a thickness (D1) of the base of 0.7 or less and an indentation depth (X) of the front face on the buffer layer side of 2.5 ?m or less.

Abstract: The pressure sensitive adhesive tape for semiconductor processing of the present invention is a pressure sensitive adhesive tape for semiconductor processing, which, in a step of grinding a back face of a semiconductor wafer having a groove formed on a front face thereof or having a modified region formed therein to singulate the semiconductor wafer into semiconductor chips, is stuck on the front face of the semiconductor wafer and used, the pressure sensitive adhesive tape for semiconductor processing including a base, a buffer layer provided on one face of the base, and a pressure sensitive adhesive layer provided on the other face of the base, and having a ratio (D2/D1) of a thickness (D2) of the buffer layer to a thickness (D1) of the base of 0.7 or less and an indentation depth (X) of the front face on the buffer layer side of 2.5 ?m or less.

Abstract: The pressure sensitive adhesive tape for semiconductor processing of the present invention is a pressure sensitive adhesive tape for semiconductor processing, which, in a step of grinding a back face of a semiconductor wafer having a groove formed on a front face thereof or having a modified region formed therein to singulate the semiconductor wafer into semiconductor chips, is stuck on the front face of the semiconductor wafer and used, the pressure sensitive adhesive tape for semiconductor processing including a base, a buffer layer provided on one face of the base, and a pressure sensitive adhesive layer provided on the other face of the base, and having a ratio (D2/D1) of a thickness (D2) of the buffer layer to a thickness (D1) of the base of 0.7 or less and an indentation depth (X) of the front face on the buffer layer side of 2.5 ?m or less.

Abstract: The present invention relates to a back grinding sheet (BG sheet) (1a, 1b, 1c) having an unevenness-absorbing layer (12) on a substrate (11), in which the unevenness-absorbing layer is a layer formed of a film-forming composition containing (A) a urethane (meth)acrylate and (B) a polymerizable monomer except component (A) and the layer satisfies the following requirements (a) to (c): (a) a loss tangent at 70° C. measured at a frequency of 1 Hz is 1.5 or more, (b) a relaxation rate 300 seconds after a square (1 cm×1 cm) of the unevenness-absorbing layer is compressed at 25° C. and a compressive load of 10 N is 30% or less, and (c) a storage elastic modulus at 25° C. measured at a frequency of 1 Hz is 1.0 to 10.0 MPa.

Abstract: The present invention relates to a back grinding sheet (BG sheet) (1a, 1b, 1c) having an unevenness-absorbing layer (12) on a substrate (11), in which the unevenness-absorbing layer is a layer formed of a film-forming composition containing (A) a urethane (meth)acrylate and (B) a polymerizable monomer except component (A) and the layer satisfies the following requirements (a) to (c): (a) a loss tangent at 70° C. measured at a frequency of 1 Hz is 1.5 or more, (b) a relaxation rate 300 seconds after a square (1 cm×1 cm) of the unevenness-absorbing layer is compressed at 25° C. and a compressive load of 10 N is 30% or less, and (c) a storage elastic modulus at 25° C. measured at a frequency of 1 Hz is 1.0 to 10.0 MPa.

Abstract: To provide an adhesive sheet for wafer processing that satisfies characteristics such as: (1) protecting an uneven circuit surface during grinding with an adhesive force that is not excessively weak; (2) being easy to remove after processing; and (3) leaving very little adhesive residue on the wafer, and that can preferably be used as a removable BG sheet or the like. This adhesive sheet for wafer processing is characterized in having a substrate and an adhesive layer formed on the substrate, the adhesive layer having an adhesive polymer (A) and a polyrotaxane (B) having a linear-chain molecule passing through the opening of the at least two cyclic molecules, and having a block group at both ends of the linear-chain molecule, the adhesive polymer (A) and the cyclic molecule of the polyrotaxane (B) being linked together to form a crosslinked structure.