Patents by Inventor Tomofumi Honjo
Tomofumi Honjo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9847435Abstract: To improve characteristics, reliability, and the like of a solar cell element, the solar cell element includes: a semiconductor substrate which includes a first main surface and a second main surface that is positioned opposite to the first main surface, and in which a p-type semiconductor region and an n-type semiconductor region are stacked in such a manner that the p-type semiconductor region is positioned closest to the first main surface and the n-type semiconductor region is positioned closest to the second main surface; a first passivation layer which is disposed on the p-type semiconductor region that is positioned closest to the first main surface, and which includes aluminum oxide; and a first protective layer that is disposed on the first passivation layer. The first protective layer includes an oxide that contains at least one kind of zirconium and hafnium.Type: GrantFiled: August 26, 2013Date of Patent: December 19, 2017Assignee: KYOCERA CorporationInventors: Shiro Miyazaki, Tomofumi Honjo, Shigeo Aono
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Patent number: 9735293Abstract: This solar cell element, which is increased in the conversion efficiency due to improved effect of passivation, includes a semiconductor substrate in which a p-type first semiconductor region and an n-type second semiconductor region are stacked such that the first semiconductor region is located nearmost a first principal surface side and the second semiconductor region is located nearmost a second principal surface side; and a first passivation film containing aluminum oxide and arranged on the first principal surface side of the first semiconductor region. In the inside of the first passivation film of the solar cell element, the first ratio obtained by dividing the aluminum atomic density by the oxygen atomic density is 0.613 or more and less than 0.667 and the second ratio obtained by dividing the sum of the aluminum atomic density and the hydrogen atomic density by the oxygen atomic density is 0.667 or more and less than 0.786.Type: GrantFiled: March 28, 2013Date of Patent: August 15, 2017Assignee: Kyocera CorporationInventors: Kouji Miyamoto, Shigeo Aono, Tomofumi Honjo, Shiro Miyazaki, Masahiro Tanaka, Koichiro Niira, Kenichi Kurobe
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Patent number: 9287351Abstract: [Problem] To provide a composite substrate which includes a silicon substrate having few lattice defects. [Solution] A composite substrate (50) that comprises a first substrate (10), which is constituted of a semiconductor material, a second substrate (40), which is constituted of an insulating material, and an oxide layer (30) and a semiconducting epitaxial layer (20) which have been disposed between the substrates (10) and (40) in this order from the second substrate (40) side, the oxide layer (30) having oxygen atoms arranged on the side thereof which faces the epitaxial layer (20).Type: GrantFiled: June 26, 2012Date of Patent: March 15, 2016Assignee: Kyocera CorporationInventors: Masanobu Kitada, Tomofumi Honjo
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Patent number: 9171972Abstract: The method for producing a photoelectric converter of the present invention comprises a preparation step for preparing a substrate (2) formed from silicon; a first film-formation step for the formation of a first protective film (3) by deposition of aluminum oxide on a top surface (2B) of the substrate (2) using the atom deposition method or chemical vapor deposition method in an atmosphere containing hydrogen; and a second film-formation step for forming a second protective film (4) by deposition of aluminum oxide on the first protective film (3) using sputtering after the first film-formation step. Moreover, the photoelectric converter of the present invention comprises a substrate formed from silicon; a first protective film formed from aluminum oxide; and a second protective film formed from aluminum oxide, wherein the concentration of hydrogen contained in the first protective film is higher than the concentration of hydrogen contained in the second protective film.Type: GrantFiled: January 30, 2013Date of Patent: October 27, 2015Assignee: KYOCERA CorporationInventors: Shiro Miyazaki, Tomofumi Honjo, Koji Niwa, Hironori Kii, Shigeo Aono, Yosuke Nishioka
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Publication number: 20150136221Abstract: To improve characteristics, reliability, and the like of a solar cell element, the solar cell element includes: a semiconductor substrate which includes a first main surface and a second main surface that is positioned opposite to the first main surface, and in which a p-type semiconductor region and an n-type semiconductor region are stacked in such a manner that the p-type semiconductor region is positioned closest to the first main surface and the n-type semiconductor region is positioned closest to the second main surface; a first passivation layer which is disposed on the p-type semiconductor region that is positioned closest to the first main surface, and which includes aluminum oxide; and a first protective layer that is disposed on the first passivation layer. The first protective layer includes an oxide that contains at least one kind of zirconium and hafnium.Type: ApplicationFiled: August 26, 2013Publication date: May 21, 2015Inventors: Shiro Miyazaki, Tomofumi Honjo, Shigeo Aono
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Publication number: 20150075605Abstract: This solar cell element, which is increased in the conversion efficiency due to improved effect of passivation, includes a semiconductor substrate in which a p-type first semiconductor region and an n-type second semiconductor region are stacked such that the first semiconductor region is located nearmost a first principal surface side and the second semiconductor region is located nearmost a second principal surface side; and a first passivation film containing aluminum oxide and arranged on the first principal surface side of the first semiconductor region. In the inside of the first passivation film of the solar cell element, the first ratio obtained by dividing the aluminum atomic density by the oxygen atomic density is 0.613 or more and less than 0.667 and the second ratio obtained by dividing the sum of the aluminum atomic density and the hydrogen atomic density by the oxygen atomic density is 0.667 or more and less than 0.786.Type: ApplicationFiled: March 28, 2013Publication date: March 19, 2015Inventors: Kouji Miyamoto, Shigeo Aono, Tomofumi Honjo, Shiro Miyazaki, Masahiro Tanaka, Koichiro Niira, Kenichi Kurobe
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Publication number: 20150001657Abstract: The method for producing a photoelectric converter of the present invention comprises a preparation step for preparing a substrate (2) that has a photoelectric conversion layer (2a) and is formed from silicon; a first film-formation step for the formation of a first protective film (3) by deposition of aluminum oxide on a top surface (2B) of the substrate (2) using the atom deposition method or chemical vapor deposition method in an atmosphere containing hydrogen; and a second film-formation step for forming a second protective film (4) by deposition of aluminum oxide on the first protective film (3) using sputtering after the first film-formation step.Type: ApplicationFiled: January 30, 2013Publication date: January 1, 2015Applicant: KYOCERA CorporationInventors: Shiro Miyazaki, Tomofumi Honjo, Koji Niwa, Hironori Kii, Shigeo Aono, Yosuke Nishioka
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Publication number: 20140167230Abstract: [Problem] To provide a composite substrate which includes a silicon substrate having few lattice defects. [Solution] A composite substrate (50) that comprises a first substrate (10), which is constituted of a semiconductor material, a second substrate (40), which is constituted of an insulating material, and an oxide layer (30) and a semiconducting epitaxial layer (20) which have been disposed between the substrates (10) and (40) in this order from the second substrate (40) side, the oxide layer (30) having oxygen atoms arranged on the side thereof which faces the epitaxial layer (20).Type: ApplicationFiled: June 26, 2012Publication date: June 19, 2014Applicant: KYOCERA CORPORATIONInventors: Masanobu Kitada, Tomofumi Honjo