Abstract: Provided is a polyamide resin molded article having high mechanical properties and dimensional accuracy as well as low friction coefficient, low wear, and/or low abrasion property. The present invention provides a polyamide resin molded article composed of a polyamide resin composition including (A) a polyamide resin, (B) chemically modified cellulose microfibers having a weight average molecular weight (Mw) of 100,000 or more, a ratio (Mw/Mn) of the weight average molecular weight (Mw) and the number average molecular weight (Mn) of 6 or less, an alkali-soluble polysaccharides average content of 12 mass percent or less, and a degree of crystallization of 60% or more, and (C) a dispersant having a melting point of 80° C. or less and a number average molecular weight of 1000-50,000, wherein the melting point (Tm) and the crystallization temperature (Tc) of the polyamide resin molded article satisfy formula (1): Tm?Tc?30° C. . . . (1).

Abstract: To provide semiconductor films for enabling semiconductor light emitting devices particularly having excellent luminous efficiency as compared with conventional devices to be manufactured with high yields, and semiconductor light emitting devices using the films, the present invention provides an optical substrate with a concavo-convex structure (20) formed on a part or the whole of a main surface, where the concavo-convex structure has regular toothless portions. The concavo-convex structure is comprised of convex portions (21), inter-convex portion bottom portions (flat portions) (22), and a concave portion (23) (toothless portion) having a flat plane in a position lower than a main surface formed of the inter-convex bottom portions.

Abstract: A semiconductor device has a semiconductor element having a base, a cavity having a polygonal horizontal cross-section penetrating vertically through the base, a diaphragm arranged on the base to cover the cavity, and a substrate formed with a die bonding pad. A lower surface of the semiconductor element is adhered on the die bonding pad with a die bonding resin. The die bonding pad is formed so as not to contact a lower end of a valley section formed by an intersection of wall surfaces of an inner peripheral surface of the cavity of the semiconductor element.

Abstract: In a direct type point light source backlight using point light sources, a light diffuser is provided that can achieve coexistence of superior luminance, luminance uniformity (front and oblique views), and a color unevenness characteristic even with a desired backlight thickness and a few number of point light sources without using a number of optical films together. Specifically, provided is a light diffuser for point light sources, the light diffuser having a plurality of convex portions formed on a surface thereof, wherein the convex portion has a substantially triangular pyramid shape whose bottom surface is a triangle, and an inclined angle ? with respect to a bottom surface of a side surface of the substantially triangular pyramid shape and a refractive index A of a material forming the convex portion satisfy the following equations (1) and (2). ???40A°+115.2°??(1) ??25A°+22.

Abstract: A bump-joining pad (61) is provided to the upper surface of a substrate (45), and a bump (70) of a circuit element (43) is connected to the bump-joining pad. The bump-joining pad (61) is connected to a substrate-side joining section (69) provided to a surface facing a cover by a pattern wiring (64). A microphone chip (42) is mounted on the lower surface of the cover (44). A first joining pad (a bonding pad (48), a cover-side joining section (49)) is provided to a surface of the cover (44) facing the substrate (45), and the microphone chip (42) is connected to the first joining pad by a bonding wire (50). The first joining pad of the cover (44) and the substrate-side joining section (69) of the substrate (45) are joined by a conductive material (65), and as a result, the microphone chip (42) and the circuit element (43) are electrically connected.

Abstract: A miniaturized microphone maintaining the properties of a microphone chip and achieving a smaller mounting area. The microphone includes a package which includes a first and second member. At least one of the first second members includes a recess. The microphone also includes a circuit element installed on an inner surface of the first member. Additionally, the microphone includes a microphone chip arranged on a surface on an opposite side of an installing surface of the circuit element.

Abstract: A connecting pad producing method has a first process of projecting an insulating member in a surface of a base material such that a region where a connecting pad is formed is surrounded, a second process of forming a conductive layer in the surface of the base material such that the insulating member is coated with the conductive layer, and a third process of removing the conductive layer with which the insulating member is coated, exposing the insulating member over a whole periphery from the conductive layer, and forming the connecting pad including the conductive layer in a region surrounded by the insulating member. The conductive layer with which the insulating member is coated is removed so as not to reach the conductive layer surface in a region adjacent to the insulating member in the third process.

Abstract: An electronic component has a substrate, a die bonding pad provided on an upper surface of the substrate, a semiconductor element bonded onto the die bonding pad by a die bonding resin, a conductive pattern disposed adjacent to the die bonding pad, and a coating member covering the conductive pattern. At least an outer peripheral portion of a surface of the die bonding pad is made of an inorganic material. The inorganic material of the outer peripheral portion is exposed. The die bonding pad and the conductive pattern are separated by an air gap such that the coating member does not come into contact with the die bonding pad.

Abstract: An electronic component has a board, a semiconductor element mounted on an upper surface of the board, a ground electrode formed in a region surrounding the semiconductor element on the upper surface of the board, a conductive cap that overlaps the board such that the semiconductor element is covered therewith, and a conductive joining member that joins a whole periphery of a lower surface of the conductive cap to the ground electrode. The conductive cap includes a pressing portion on the lower surface thereof The lower surface of the conductive cap and the ground electrode are joined by the conductive joining member on an outer peripheral side of the pressing portion.

Abstract: The semiconductor device has a simplified structure which includes a package structure in which a member for mounting a semiconductor element is separate from a member including a signal input/output unit. A microphone package is configured with a cover and a substrate. A microphone chip and a circuit element are adhered and fixed to a top surface of a recess formed in the cover. A plurality of bonding pads are arranged on the lower surface of the cover on the outer side of the recess. A bonding wire is connected to the circuit element and the bonding pad. The substrate includes a signal input/output terminal serving as the signal input/output unit, and a connection electrode, conducted with the signal input/output terminal, is arranged facing the bonding pad on the upper surface of the substrate. The substrate, cover, connection electrode, and bonding pad are joined with a conductive member.

Abstract: An electronic component has a printed substrate having a die bonding portion, a semiconductor element rigidly bonded to the die bonding portion of the printed substrate by a die bonding resin, and a wire bonding terminal formed by a conductor pattern on the printed substrate that is connected to the semiconductor element by a bonding wire. A groove portion located at a level lower than the conductor pattern of the printed substrate is formed in a region located on at least a die bonding portion side in a region surrounding the wire bonding terminal.

Abstract: In a direct type point light source backlight using point light sources, a light diffuser is provided that can achieve coexistence of superior luminance, luminance uniformity (front and oblique views), and a color unevenness characteristic even with a desired backlight thickness and a few number of point light sources without using a number of optical films together. Specifically, provided is a light diffuser for point light sources, the light diffuser having a plurality of convex portions formed on a surface thereof, wherein the convex portion has a substantially triangular pyramid shape whose bottom surface is a triangle, and an inclined angle ? with respect to a bottom surface of a side surface of the substantially triangular pyramid shape and a refractive index A of a material forming the convex portion satisfy the following equations (1) and (2). ???40 A°+115.2°??(1) ??25 A°+22.

Abstract: An electronic component has a substrate, a die bonding pad provided on an upper surface of the substrate, a semiconductor element bonded onto the die bonding pad by a die bonding resin, a conductive pattern disposed adjacent to the die bonding pad, and a coating member covering the conductive pattern. At least an outer peripheral portion of a surface of the die bonding pad is made of an inorganic material. The inorganic material of the outer peripheral portion is exposed. The die bonding pad and the conductive pattern are separated by an air gap such that the coating member does not come into contact with the die bonding pad.

Abstract: A miniaturized microphone maintaining the properties of a microphone chip and achieving a smaller mounting area. The microphone includes a package which includes a first and second member. At least one of the first second members includes a recess. The microphone also includes a circuit element installed on an inner surface of the first member. Additionally, the microphone includes a microphone chip arranged on a surface on an opposite side of an installing surface of the circuit element.

Abstract: A semiconductor device including a package formed by overlapping a cover and a substrate one over the other. A microphone chip is mounted on a top surface of a recess of the cover, and a circuit element is mounted on an upper surface of a recess of the substrate, where the microphone chip is positioned perpendicularly on the upper side of the circuit element. The microphone chip is connected to a bonding pad arranged on the lower surface of the cover by a bonding wire, the circuit element is connected to a bonding pad arranged on the upper surface of the substrate by a bonding wire, and a cover side joining portion conducted to the bonding pad on the lower surface of the cover and a substrate side joining portion conducted t to the bonding pad on the upper surface of the substrate are joined by a conductive material.

Abstract: The semiconductor device has a simplified structure which includes a package structure in which a member for mounting a semiconductor element is separate from a member including a signal input/output unit. A microphone package is configured with a cover and a substrate. A microphone chip and a circuit element are adhered and fixed to a top surface of a recess formed in the cover. A plurality of bonding pads are arranged on the lower surface of the cover on the outer side of the recess. A bonding wire is connected to the circuit element and the bonding pad. The substrate includes a signal input/output terminal serving as the signal input/output unit, and a connection electrode, conducted with the signal input/output terminal, is arranged facing the bonding pad on the upper surface of the substrate. The substrate, cover, connection electrode, and bonding pad are joined with a conductive member.

Abstract: A connecting pad producing method has a first process of projecting an insulating member in a surface of a base material such that a region where a connecting pad is formed is surrounded, a second process of forming a conductive layer in the surface of the base material such that the insulating member is coated with the conductive layer, and a third process of removing the conductive layer with which the insulating member is coated, exposing the insulating member over a whole periphery from the conductive layer, and forming the connecting pad including the conductive layer in a region surrounded by the insulating member.

Abstract: A semiconductor device has a semiconductor element having a base, a cavity having a polygonal horizontal cross-section penetrating vertically through the base, a diaphragm arranged on the base to cover the cavity, and a substrate formed with a die bonding pad. A lower surface of the semiconductor element is adhered on the die bonding pad with a die bonding resin. The die bonding pad is formed so as not to contact a lower end of a valley section formed by an intersection of wall surfaces of an inner peripheral surface of the cavity of the semiconductor element.

Abstract: An electronic component has a printed substrate having a die bonding portion, a semiconductor element rigidly bonded to the die bonding portion of the printed substrate by a die bonding resin, and a wire bonding terminal formed by a conductor pattern on the printed substrate that is connected to the semiconductor element by a bonding wire. A groove portion located at a level lower than the conductor pattern of the printed substrate is formed in a region located on at least a die bonding portion side in a region surrounding the wire bonding terminal.

Abstract: The present invention takes as its object the provision of a thermoplastic resin foamed sheet having excellent surface exterior appearance, lightweightness, PTT property and light reflectivity and the provision of a method for producing the thermoplastic resin foamed sheet. Specifically, the thermoplastic resin foamed sheet is a foamed sheet including 80 to 99.5% by weight of an (A) thermoplastic resin and 0.5 to 20% by weight of (B) PTFE (polytetrafluoroethylene), wherein when in the foamed sheet interior observed with a SEM (scanning electron microscope), the number of the particles of (B) PTFE having a dispersed particle size falling within a range from 0.05 to 1 ?m is represented by (L), the number of the particles of (B) PTFE having a dispersed particle size falling within a range from 1 to 30 ?m is represented by (M) and the number of the particles of (B) PTFE having a dispersed particle size falling within a range of 30 ?m or more is represented by (N), (L)/(M)=99.99/0.