Abstract: An inverter-control element operates with a power-supply potential supplied to an inverter-control-system power-supply terminal to output a signal for controlling an inverter switching element. A brake control element operates with a power-supply potential supplied to a brake-control-system power-supply terminal to output a signal for controlling a brake switching element. A first metal component includes a plurality of protrusions protruding from a sealing resin, is supported by the sealing resin with a portion embedded in the sealing resin, and is electrically connected to each of the inverter-control-system power-supply terminal and the brake-control-system power-supply terminal.

Abstract: A power semiconductor device includes a plurality of power chips sealed in a package to control power and an IC sealed in the package to control each of the power chips. The IC is disposed at the center part of the package in the plan view. The plurality of power chips are disposed so as to surround the IC in the plan view.

Abstract: Converter output terminals of a converter are located adjacent to each other on a first side and an external terminal for external connection of a composite module is located adjacent to the converter output terminal. AC input terminals of the converter are located on a second side. Each of the distances between the converter output terminals and between the converter output terminal and the external terminal is set to a first formation pitch. Each of the distances between the AC input terminals is set to a second formation pitch. The first formation pitch is set to be equal to the second formation pitch.

Abstract: An inverter-control element operates with a power-supply potential supplied to an inverter-control-system power-supply terminal to output a signal for controlling an inverter switching element. A brake control element operates with a power-supply potential supplied to a brake-control-system power-supply terminal to output a signal for controlling a brake switching element. A first metal component includes a plurality of protrusions protruding from a sealing resin, is supported by the sealing resin with a portion embedded in the sealing resin, and is electrically connected to each of the inverter-control-system power-supply terminal and the brake-control-system power-supply terminal.

Abstract: A semiconductor module includes a voltage generator, and a heat dissipating mechanism composed of, for example, an insulating heat dissipating sheet and a heat sink. The voltage generator is capable of generating, by using a built-in linear regulator function, a power source voltage to drive a boost converter based on a voltage boosted by the boost converter. The voltage generator is mounted on the heat dissipating mechanism.

Abstract: Converter output terminals of a converter are located adjacent to each other on a first side and an external terminal for external connection of a composite module is located adjacent to the converter output terminal. AC input terminals of the converter are located on a second side. Each of the distances between the converter output terminals and between the converter output terminal and the external terminal is set to a first formation pitch. Each of the distances between the AC input terminals is set to a second formation pitch. The first formation pitch is set to be equal to the second formation pitch.

Abstract: Among first IGBTs and first MOSFETs, a transistor arranged near a first gate control circuit gives, through a gate thereof, a gate control signal supplied from the first gate control circuit to a gate of a transistor arranged at a position farther from the first gate control circuit. Among second IGBTs and second MOSFETs, a transistor arranged near a second gate control circuit gives, through a gate thereof, a gate control signal supplied from the second gate control circuit to a gate of a transistor arranged at a position farther from the second gate control circuit.

Abstract: A power module includes an IGBT; a MOSFET connected in parallel with the IGBT; a lead frame having a first frame portion on which the IGBT is mounted and a second frame portion on which the MOSFET is mounted, and having a step by which the first frame portion is located at a first height and the second frame portion is located at a second height larger than the first height; and an insulation sheet for a heat sink which is disposed on an underside of only the first frame portion of the lead frame.

Abstract: A power semiconductor device includes a plurality of power chips sealed in a package to control power and an IC sealed in the package to control each of the power chips. The IC is disposed at the center part of the package in the plan view. The plurality of power chips are disposed so as to surround the IC in the plan view.

Abstract: A semiconductor module includes a voltage generator, and a heat dissipating mechanism composed of, for example, an insulating heat dissipating sheet and a heat sink. The voltage generator is capable of generating, by using a built-in linear regulator function, a power source voltage to drive a boost converter based on a voltage boosted by the boost converter. The voltage generator is mounted on the heat dissipating mechanism.

Abstract: A power module includes an IGBT; a MOSFET connected in parallel with the IGBT; a lead frame having a first frame portion on which the IGBT is mounted and a second frame portion on which the MOSFET is mounted, and having a step by which the first frame portion is located at a first height and the second frame portion is located at a second height larger than the first height; and an insulation sheet for a heat sink which is disposed on an underside of only the first frame portion of the lead frame.

Abstract: Among first IGBTs and first MOSFETs, a transistor arranged near a first gate control circuit gives, through a gate thereof, a gate control signal supplied from the first gate control circuit to a gate of a transistor arranged at a position farther from the first gate control circuit. Among second IGBTs and second MOSFETs, a transistor arranged near a second gate control circuit gives, through a gate thereof, a gate control signal supplied from the second gate control circuit to a gate of a transistor arranged at a position farther from the second gate control circuit.

Abstract: The present invention provides a method for inducing differentiation of cardiomyocytes efficiently and selectively from stem cells. A method for inducing differentiation of cardiomyocytes from pluripotent stem cells, which comprises: (i) culturing the pluripotent stem cells in a culture medium containing no substance that promotes activation of the canonical Wnt signaling pathway during the time period between initiation of differentiation induction and 24 hours before the period of elevated canonical Wnt gene expression; and then (ii) culturing the pluripotent stem cells in a culture medium containing a substance that promotes activation of the canonical Wnt signaling pathway during a time period of 24 to 96 hours, starting from 24 to 0 hours before the period of elevated canonical Wnt gene expression.

Abstract: For a method of inducing differentiation of cardiomyocytes from stem cells, a method is provided to induce efficiently and selectively differentiation of cardiomyocytes by such a method in which the stem cells are cultured to induce differentiation into cardiomyocytes in the presence of a substance that inhibits BMP signaling.

Abstract: The present invention provides a method for inducing differentiation of cardiomyocytes efficiently and selectively from stem cells. A method for inducing differentiation of cardiomyocytes from pluripotent stem cells, which comprises: (i) culturing the pluripotent stem cells in a culture medium containing no substance that promotes activation of the canonical Wnt signaling pathway during the time period between initiation of differentiation induction and 24 hours before the period of elevated canonical Wnt gene expression; and then (ii) culturing the pluripotent stem cells in a culture medium containing a substance that promotes activation of the canonical Wnt signaling pathway during a time period of 24 to 96 hours, starting from 24 to 0 hours before the period of elevated canonical Wnt gene expression.

Abstract: For a method of inducing differentiation of cardiomyocytes from stem cells, a method is provided to induce efficiently and selectively differentiation of cardiomyocytes by such a method in which the stem cells are cultured to induce differentiation into cardiomyocytes in the presence of a substance that inhibits BMP signaling.

Abstract: A control output signal is supplied to a gate electrode of an insulated gate transistor from a control signal output terminal of a control device, however, with regard to the insulated gate transistor, a control output signal is also influenced when that transistor is short-circuited, and a signal waveform different from that in a normal operating state occurs. The short-circuit is detected by monitoring the control output signal of the insulated gate transistor, and in case of the short-circuit, the short-circuit protection of the insulated gate transistor is performed by forcing the control device to stop that control output signal.

Abstract: A semiconductor apparatus is provided with a power switching semiconductor device, a control integrated circuit, a current detector section, and a protection circuit. The control integrated circuit drives the power switching semiconductor device, and the current detector section detects a current flowing in the power switching semiconductor device. The protection circuit compares a detected voltage obtained from the current detector section with a comparison reference voltage obtained from a predetermined reference voltage, and stops the control integrated circuit from driving the power switching semiconductor device when the detected voltage is higher than the comparison reference voltage. A terminal is further provided that pulls out a line of the comparison reference voltage to an external circuit of the semiconductor apparatus so as to change the comparison reference voltage by means of an external resistor connected to the terminal.

Abstract: A control output signal is supplied to a gate electrode of the transistor which is an insulated gate transistor from a control signal output terminal of a control device, however, with regard to the insulated gate transistor, a control output signal is also influenced when that transistor is short-circuited, and a signal waveform different from that in a normal operating state occurs. With employing this, the short-circuit is detected by monitoring the control output signal of the insulated gate transistor, and in case of the short-circuit, the short-circuit protection of the insulated gate transistor is performed by forcing the control device to stop that control output signal.

Abstract: A battery separator and a method for manufacturing the same and a battery using the same. The battery separator is excellent in alkaline retaining property, initial alkaline absorption and durable alkaline absorption while maintaining tensile strength and air permeability, by forming functional groups or bonds of —CHO or —C+H—O−, —CO—, and —COO— or —COO−on the surface of the non-woven fabric. The battery shows great wettability with an alkaline electrolyte when incorporated into an battery, and thus, improves the battery life.