Patents by Inventor Tomofumi Yamamuro

Tomofumi Yamamuro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11181805
    Abstract: A lighting system includes a light source having a broad emission spectrum, a spatial light modulator configured to modulate one or more of phase and amplitude of light irradiated from the light source to a target object, and a detector configured to detect light intensity being reflected from the target object. Additionally, the lighting system includes circuitry configured to divide an emission spectrum of light irradiated from a light source into a plurality of wavelength ranges, measure irradiated light formed with a first wavelength range to the target object, calculate a transmission matrix based on the measurement, calculate a set of other transmission matrixes, calculate a set of patterns for generating a plurality of localized illuminations, drive the spatial light modulator by a modulation signal which forms an irradiation pattern, and scan the plurality of localized illuminations on the target object.
    Type: Grant
    Filed: December 10, 2019
    Date of Patent: November 23, 2021
    Assignees: STANLEY ELECTRIC CO., LTD., LINOPTX, LLC
    Inventors: Lin Pang, Tomofumi Yamamuro
  • Publication number: 20210250479
    Abstract: An adaptive lighting apparatus includes a light source, a spatial light modulator, and processing circuitry. Further, the processing circuitry is configured to drive the spatial light modulator by a modulation signal for irradiating patterns for generating one or more localized illuminations, scan the one or more localized illuminations on the target object based on the patterns, and calculate, in advance, the patterns so that light intensity of the one or more localized illuminations is enhanced on a virtual target located at a predetermined distance and without a scattering medium.
    Type: Application
    Filed: December 10, 2019
    Publication date: August 12, 2021
    Applicants: STANLEY ELECTRIC CO., LTD., LINOPTX, LLC
    Inventors: Lin PANG, Tomofumi YAMAMURO
  • Publication number: 20200238896
    Abstract: A lighting system includes a light source having a broad emission spectrum, a spatial light modulator configured to modulate one or more of phase and amplitude of light irradiated from the light source to a target object, and a detector configured to detect light intensity being reflected from the target object. Additionally, the lighting system includes circuitry configured to divide an emission spectrum of light irradiated from a light source into a plurality of wavelength ranges, measure irradiated light formed with a first wavelength range to the target object, calculate a transmission matrix based on the measurement, calculate a set of other transmission matrixes, calculate a set of patterns for generating a plurality of localized illuminations, drive the spatial light modulator by a modulation signal which forms an irradiation pattern, and scan the plurality of localized illuminations on the target object.
    Type: Application
    Filed: December 10, 2019
    Publication date: July 30, 2020
    Applicants: Starley Electric Co., Ltd., LinOptx, LLC
    Inventors: Lin Pang, Tomofumi Yamamuro
  • Publication number: 20200241136
    Abstract: An image capture apparatus includes a light source, a modulator configured to modulate light irradiated from the light source to a target object, an imaging device configured to generate image data by capturing one or more images of the target object, and processing circuitry. The processing circuitry is configured to drive the modulator by a first modulation signal, the first modulation signal being for irradiating a first pattern, drive the modulator by a second modulation signal, the second signal being for irradiating a second pattern, wherein the first pattern and the second pattern are irradiated alternately, modulate reflected light from the target object, the reflected light from the target object being detected at a lock-in detector, and generate an image composed of image data from the reflected light of the plurality of localized illuminations.
    Type: Application
    Filed: December 10, 2019
    Publication date: July 30, 2020
    Applicants: Stanley Electric Co., Ltd., LinOptx, LLC
    Inventors: Lin PANG, Tomofumi YAMAMURO
  • Publication number: 20200241385
    Abstract: A system for association-based scattering processing includes a spatial light modulator configured to modulate one or more of phase and amplitude of light irradiated from a light source to a target object. Additionally, the system includes processing circuitry configured to evaluate a field distribution for one localized illumination, induce a set of field distributions for a plurality of localized illuminations based on the field distribution for the one localized illumination, and apply the set of field distributions to the spatial light modulator, scanning a plurality of localized illuminations on the target object.
    Type: Application
    Filed: December 10, 2019
    Publication date: July 30, 2020
    Applicants: Stanley Electric Co., Ltd., LinOptx, LLC
    Inventors: Lin PANG, Tomofumi YAMAMURO
  • Patent number: 9035339
    Abstract: A light emitting device and a method of manufacturing the same are capable of enhancing brightness and color distribution characteristics on a light-exiting surface. The light emitting device can include: a substrate; a light emitting stacked body composed of a semiconductor light emitting element disposed on the substrate, a wavelength conversion layer disposed on the semiconductor light emitting element and containing phosphor particles, and a light-transmitting plate member disposed on the wavelength conversion layer; and a light-transmitting scattering member containing a scattering material and disposed on the light-transmitting plate member.
    Type: Grant
    Filed: February 25, 2013
    Date of Patent: May 19, 2015
    Assignee: Stanley Electric Co., Ltd.
    Inventor: Tomofumi Yamamuro
  • Patent number: 8546797
    Abstract: In a ZnO based compound semiconductor device, nitrogen (N) doped (Mg)ZnO:N layer is inserted as a diffusion barrier layer 9 between a ZnO based n-type layer 3 to which n-type dopants are doped and an active layer 4 or a p-type layer 5. The diffusion barrier layer 9 prevents diffusion of the n-type dopants to the active layer 4 or the p-type layer 5. Crystalline quality of the active layer 4 of the ZnO based compound semiconductor device is not deteriorated by the diffusion of the n-type dopants.
    Type: Grant
    Filed: October 19, 2010
    Date of Patent: October 1, 2013
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Tomofumi Yamamuro, Hiroyuki Kato, Akio Ogawa
  • Patent number: 8436351
    Abstract: A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.
    Type: Grant
    Filed: December 15, 2010
    Date of Patent: May 7, 2013
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Tomofumi Yamamuro, Michihiro Sano, Naochika Horio, Hiroyuki Kato, Akio Ogawa, Hiroshi Kotani
  • Patent number: 8294146
    Abstract: Mg is doped in a ZnO-containing semiconductor layer in a concentration range from 1×1017 cm?3 to 2×1020 cm?3.
    Type: Grant
    Filed: November 3, 2009
    Date of Patent: October 23, 2012
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Tomofumi Yamamuro, Hiroyuki Kato
  • Patent number: 8143618
    Abstract: A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn—Si—O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure.
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: March 27, 2012
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Hiroshi Kotani, Michihiro Sano, Hiroyuki Kato, Naochika Horio, Akio Ogawa, Tomofumi Yamamuro
  • Patent number: 8039867
    Abstract: A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO.
    Type: Grant
    Filed: August 13, 2009
    Date of Patent: October 18, 2011
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Akio Ogawa, Michihiro Sano, Hiroyuki Kato, Naochika Horio, Hiroshi Kotani, Tomofumi Yamamuro
  • Patent number: 7968905
    Abstract: A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.
    Type: Grant
    Filed: July 1, 2008
    Date of Patent: June 28, 2011
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Tomofumi Yamamuro, Michihiro Sano, Naochika Horio, Hiroyuki Kato, Akio Ogawa, Hiroshi Kotani
  • Patent number: 7943927
    Abstract: A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO1-x1Sx1; a second semiconductor layer formed above the first semiconductor layer and containing ZnO1-x2Sx2; and a third semiconductor layer formed above the second semiconductor layer and containing ZnO1-x3Sx3, wherein an S composition x1 of the first semiconductor layer, an S composition x2 of the second semiconductor layer and an S composition x3 of the third semiconductor layer are so selected that an energy of the second semiconductor layer at the lower end of a conduction band becomes lower than both energies of the first and third semiconductor layers at the lower end of the conduction bands, and that an energy of the second semiconductor layer at the upper end of a valence band becomes higher than both energies of the first and third semiconductor layers at the upper end of the valence bands.
    Type: Grant
    Filed: July 13, 2009
    Date of Patent: May 17, 2011
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Akio Ogawa, Michihiro Sano, Hiroyuki Kato, Hiroshi Kotani, Tomofumi Yamamuro
  • Publication number: 20110089418
    Abstract: In a ZnO based compound semiconductor device, nitrogen (N) doped (Mg)ZnO:N layer is inserted as a diffusion barrier layer 9 between a ZnO based n-type layer 3 to which n-type dopants are doped and an active layer 4 or a p-type layer 5. The diffusion barrier layer 9 prevents diffusion of the n-type dopants to the active layer 4 or the p-type layer 5. Crystalline quality of the active layer 4 of the ZnO based compound semiconductor device is not deteriorated by the diffusion of the n-type dopants.
    Type: Application
    Filed: October 19, 2010
    Publication date: April 21, 2011
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Tomofumi YAMAMURO, Hiroyuki KATO, Akio OGAWA
  • Publication number: 20110084275
    Abstract: A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.
    Type: Application
    Filed: December 15, 2010
    Publication date: April 14, 2011
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Tomofumi Yamamuro, Michihiro Sano, Naochika Horio, Hiroyuki Kato, Akio Ogawa, Hiroshi Kotani
  • Patent number: 7728347
    Abstract: A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer.
    Type: Grant
    Filed: April 23, 2009
    Date of Patent: June 1, 2010
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Akio Ogawa, Michihiro Sano, Hiroyuki Kato, Hiroshi Kotani, Tomofumi Yamamuro
  • Publication number: 20100123129
    Abstract: Mg is doped in a ZnO-containing semiconductor layer in a concentration range from 1×1017 cm?3 to 2×1020 cm?3.
    Type: Application
    Filed: November 3, 2009
    Publication date: May 20, 2010
    Applicant: Stanley Electric Co., Ltd.
    Inventors: Tomofumi Yamamuro, Hiroyuki Kato
  • Patent number: 7718468
    Abstract: A method includes (a) preparing a substrate, and (b) growing a ZnO-containing compound semiconductor layer above the substrate by supplying at the same time at least Zn and O as source gases and S as a surfactant.
    Type: Grant
    Filed: August 20, 2008
    Date of Patent: May 18, 2010
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Tomofumi Yamamuro, Michihiro Sano, Hiroyuki Kato, Akio Ogawa
  • Publication number: 20090294758
    Abstract: A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO.
    Type: Application
    Filed: August 13, 2009
    Publication date: December 3, 2009
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Akio OGAWA, Michihiro Sano, Hiroyuki Kato, Naochika Horio, Hiroshi Kotani, Tomofumi Yamamuro
  • Publication number: 20090272972
    Abstract: A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO1-x1Sx1; a second semiconductor layer formed above the first semiconductor layer and containing ZnO1-x2Sx2; and a third semiconductor layer formed above the second semiconductor layer and containing ZnO1-x3Sx3, wherein an S composition x1 of the first semiconductor layer, an S composition x2 of the second semiconductor layer and an S composition x3 of the third semiconductor layer are so selected that an energy of the second semiconductor layer at the lower end of a conduction band becomes lower than both energies of the first and third semiconductor layers at the lower end of the conduction bands, and that an energy of the second semiconductor layer at the upper end of a valence band becomes higher than both energies of the first and third semiconductor layers at the upper end of the valence bands.
    Type: Application
    Filed: July 13, 2009
    Publication date: November 5, 2009
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Akio Ogawa, Michihiro Sano, Hiroyuki Kato, Hiroshi Kotani, Tomofumi Yamamuro