Abstract: The present disclosure provides a non-aqueous electrolyte secondary battery having a stable open-circuit voltage. An electrode for a non-aqueous electrolyte secondary battery according to one embodiment includes a belt-like current collector, a mixture layer formed on each surface of the current collector, and a lead bonded to an exposed portion of the current collector where the surfaces of the current collector are exposed, the lead extending from one end of the current collector, the one end and another end constituting both ends of the current collector in the width direction. In an electrode for a non-aqueous electrolyte secondary battery according to one embodiment, a mixture layer is formed on at least one surface of a current collector in the width direction of the current collector and adjacent to an exposed portion on one end side.

Abstract: A power storage device and an applicator is obtained that achieve an increase in capacity and an improvement in productivity, and that enable the thickness of a mixture layer to be inhibited from varying. A positive electrode mixture slurry is discharged into discharge regions of a belt-like positive electrode current collector that extend in a length direction of the positive electrode current collector from discharge nozzles corresponding to the respective discharge regions to form a positive electrode mixture layer on the positive electrode current collector. The discharge regions are arranged such that a part of each of the discharge regions overlaps a part of another of the discharge regions adjacent thereto when viewed in the length direction to form overlapping portions. The positive electrode mixture slurry is intermittently discharged to form an exposed portion on at least one of the discharge regions.

Abstract: An electrode for a nonaqueous electrolyte secondary battery that is less likely to cause loss of a mixture layer and that can ensure good cycle characteristics of the battery. An electrode for a nonaqueous electrolyte secondary battery of an exemplary embodiment includes a rectangular current collector and a mixture layer that contains an active material and a binder and that is formed on the current collector. The mixture layer covers at least one edge of four linear peripheral edges of the current collector, and the binder content in the mixture layer has a maximum value at a position 0.5 mm to 5.5 mm away from the one edge in a second direction that is perpendicular to a first direction along the one edge. The maximum value is more than 100% and 240% or less of the binder content at the center in the second direction of the mixture layer.

Abstract: An electrode for a non-aqueous electrolyte secondary battery according to one embodiment includes a belt-like current collector, a mixture layer formed on each surface of the current collector, and a lead bonded to an exposed portion of the current collector where the surfaces of the current collector are exposed, the lead extending from one end of the current collector, the one end and another end constituting both ends of the current collector in the width direction. The mixture layer on at least one surface of the current collector is formed in the width direction of the current collector and adjacent to the exposed portion on the other end side, and the length in the width direction of a portion of the lead disposed on the current collector ranges from 60% to 98% of the width of the current collector.

Abstract: The present disclosure provides a non-aqueous electrolyte secondary battery having a stable open-circuit voltage. An electrode for a non-aqueous electrolyte secondary battery according to one embodiment includes a belt-like current collector, a mixture layer formed on each surface of the current collector, and a lead bonded to an exposed portion of the current collector where the surfaces of the current collector are exposed, the lead extending from one end of the current collector, the one end and another end constituting both ends of the current collector in the width direction. In an electrode for a non-aqueous electrolyte secondary battery according to one embodiment, a mixture layer is formed on at least one surface of a current collector in the width direction of the current collector and adjacent to an exposed portion on one end side.

Abstract: An electrode for a nonaqueous electrolyte secondary battery that is less likely to cause loss of a mixture layer and that can ensure good cycle characteristics of the battery. An electrode for a nonaqueous electrolyte secondary battery of an exemplary embodiment includes a rectangular current collector and a mixture layer that contains an active material and a binder and that is formed on the current collector. The mixture layer covers at least one edge of four linear peripheral edges of the current collector, and the binder content in the mixture layer has a maximum value at a position 0.5 mm to 5.5 mm away from the one edge in a second direction that is perpendicular to a first direction along the one edge. The maximum value is more than 100% and 240% or less of the binder content at the center in the second direction of the mixture layer.

Abstract: An electrode for a non-aqueous electrolyte secondary battery according to one embodiment includes a belt-like current collector, a mixture layer formed on each surface of the current collector, and a lead bonded to an exposed portion of the current collector where the surfaces of the current collector are exposed, the lead extending from one end of the current collector, the one end and another end constituting both ends of the current collector in the width direction. The mixture layer on at least one surface of the current collector is formed in the width direction of the current collector and adjacent to the exposed portion on the other end side, and the length in the width direction of a portion of the lead disposed on the current collector ranges from 60% to 98% of the width of the current collector.

Abstract: A power storage device and an applicator is obtained that achieve an increase in capacity and an improvement in productivity, and that enable the thickness of a mixture layer to be inhibited from varying. A positive electrode mixture slurry is discharged into discharge regions of a belt-like positive electrode current collector that extend in a length direction of the positive electrode current collector from discharge nozzles corresponding to the respective discharge regions to form a positive electrode mixture layer on the positive electrode current collector. The discharge regions are arranged such that a part of each of the discharge regions overlaps a part of another of the discharge regions adjacent thereto when viewed in the length direction to form overlapping portions. The positive electrode mixture slurry is intermittently discharged to form an exposed portion on at least one of the discharge regions.

Abstract: In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.

Abstract: A vapor deposition device including an evaporation source for evaporating a vapor-depositing material; a transportation section including first and second rolls for holding the substrate in the state of being wound therearound and a guide section for guiding the substrate; and a shielding section, located in a vapor deposition possible zone, for forming a shielded zone which is not reachable by the vapor-depositing material from the evaporation source. Vapor deposition zones include a planar transportation zone for transporting the substrate such that the surface of the substrate to be subjected to the vapor-depositing material is planar; and the transportation section is located with respect to the evaporation source such that the vapor-depositing material is not incident on the substrate in a direction of the normal to the substrate in the vapor deposition possible zone excluding the shielded zone.

Abstract: A vapor deposition device 100 for moving a sheet-like substrate 4 in a roll-to-roll system in a chamber 2 to continuously form a vapor deposition film on the substrate 4. The vapor deposition device 100 comprises an evaporation source 9 for evaporating a vapor-depositing material; a transportation section including first and second rolls 3 and 8 for holding the substrate 4 in the state of being wound therearound and a guide section for guiding the substrate 4; and a shielding section, located in a vapor deposition possible zone, for forming a shielded zone which is not reachable by the vapor-depositing material from the evaporation source 9.

Abstract: Provided is a method for easily and surely removing projections formed on the surface of an active material layer by a vacuum process when producing an electrochemical element electrode. Carried out to produce the electrochemical element electrode are: a first step of forming an active material layer on a current collector by a vacuum process, the active material layer being capable of storing and emitting lithium; a second step of storing the lithium in the active material layer; and a third step of removing projections on the surface of the active material layer storing the lithium.

Abstract: The present invention provides a thin film manufacturing device capable of preventing crack damage of a crucible by, while maintaining a melt state of a film formation material in the crucible, tilting the crucible to discharge substantially the entire amount of film formation material from the crucible.

Abstract: A thin film forming apparatus (100) includes: a vacuum chamber (1); a substrate transfer mechanism (40) that is provided in the vacuum chamber (1) and feeds an elongated substrate (8) to a predetermined film forming section (4) that faces a film forming source (27); an endless belt (10) capable of moving in accordance with the feeding of the substrate (8) by the substrate transfer mechanism (40), and configured to define, along an outer peripheral surface of the endless belt itself, a transfer path of the substrate (8) in the film forming section (4) so that a thin film is formed on a surface of the substrate (8) that is being transferred linearly; a through-hole (16) formed in the endless belt (10); and a substrate cooling unit (30) for introducing a cooling gas between the endless belt (10) and a back surface of the substrate (8) through the through-hole (16) from a side of an inner peripheral surface of the endless belt (10) that is moving.

Abstract: A gravure coating apparatus is provided for forming a stripe-shaped coating film by means of a gravure roll having a groove between plate cylinders. The apparatus has a scraping member having: side edges each of which contacts an edge surface of one of the plate cylinders so as to be approximately aligned along the radial direction of the gravure roll and scrapes a coating solution on the edge surface; a groove-like passage for discharging the coating solution, the groove-like passage being formed in a generally central portion of the inner peripheral surface along the bottom surface of the groove so as to be aligned along the rotation direction of the gravure roll; and a tapered surface which guides the coating solution from the edges to the groove-like passage. The scraping member is disposed in the groove, whereby the coating film formed by the plate cylinders is made uniform over the entire surface using a simple configuration.

Abstract: To provide a thin film forming apparatus capable of uniformly and adequately cooling down a substrate. The thin film forming apparatus of the present invention forms a thin film on an elongated substrate in vacuum and includes: a cooling body 1 provided close to a rear surface of the substrate being transferred at an opening 31; a gas introducing unit configured to introduce a gas to between the cooling body 1 and the substrate 21; and a substrate holding unit 3 configured to hold vicinities of both width-direction ends of the substrate traveling at the opening 31.

Abstract: The present invention provides a film forming method and a film forming apparatus each of which is capable of forming films at low cost. The film forming method of the present invention includes the steps of (i) melting a solid material 51 of a thin film to prepare a melted liquid, solidifying the melted liquid 51a to form a rod-shaped body 51b, and pulling out the rod-shaped body 51b, (ii) melting and supplying a part of the rod-shaped body 51b to a melted liquid (evaporation source) 51d, and (iii) using the melted liquid (evaporation source) 51d to form the thin film. The steps (i), (ii), and (iii) are carried out in vacuum.

Abstract: A system for controlling the coating width of an electrode plate, The system includes: a coating device which ejects a paste at a predetermined width from each of a plurality of slit nozzles toward a fed core substrate to form a coating layer on the surface of the core substrate; a gap controlling device which controls the gap between the slit nozzles of the coating device and the core substrate; a coating width measuring device which measures the width of the coating layer on the surface of the core substrate; and a controlling unit which controls the gap controlling device based on the results obtained by comparing the measured coating width with a predetermined coating width. In this system, the stripe-shaped coating layer is formed without using a masking tape, and the width of the coating layer is controlled with high accuracy.

Abstract: A vapor deposition device 100 for moving a sheet-like substrate 4 in a roll-to-roll system in a chamber 2 to continuously form a vapor deposition film on the substrate 4. The vapor deposition device 100 comprises an evaporation source 9 for evaporating a vapor-depositing material; a transportation section including first and second rolls 3 and 8 for holding the substrate 4 in the state of being wound therearound and a guide section for guiding the substrate 4; and a shielding section, located in a vapor deposition possible zone, for forming a shielded zone which is not reachable by the vapor-depositing material from the evaporation source 9.

Abstract: In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.