Abstract: A semiconductor memory device according to an embodiment includes a base portion, a laminated body, a second conductive layer, and a columnar body. The columnar body includes a semiconductor body and a charge storage film. The semiconductor body includes a first region and a second region. The first region extends from a connection portion between the semiconductor body and the first semiconductor portion to the inside of the second conductive layer. The first region includes a first material. The second region is positioned closer to the laminated body than the first region is and is configured such that at least a portion is present within the second conductive layer. The second region does not include the first material or has a concentration of the first material which is lower than that in the first region.

Abstract: A semiconductor memory device according to an embodiment includes a base portion, a laminated body, a second conductive layer, and a columnar body. The columnar body includes a semiconductor body and a charge storage film. The semiconductor body includes a first region and a second region. The first region extends from a connection portion between the semiconductor body and the first semiconductor portion to the inside of the second conductive layer. The first region includes a first material. The second region is positioned closer to the laminated body than the first region is and is configured such that at least a portion is present within the second conductive layer. The second region does not include the first material or has a concentration of the first material which is lower than that in the first region.

Abstract: According to an embodiment, a semiconductor memory device includes a stacked body in which insulating layers and electrode films are alternately stacked, a pillar member arranged in a memory hole that is disposed in the stacked body in a thickness direction, and a semiconductor layer provided below the pillar member. The pillar member has a structure in which a memory film and a channel layer are stacked in order from a side of the stacked body. The channel layer has a stacked structure that includes an outer channel semiconductor layer, an intermediate layer made of an insulating material, and an inner channel semiconductor layer, from a side of the memory film. Both of the outer channel semiconductor layer and the inner channel semiconductor layer are electrically connected to the semiconductor layer.

Abstract: According to an embodiment, a semiconductor memory device includes a stacked body in which insulating layers and electrode films are alternately stacked, a pillar member arranged in a memory hole that is disposed in the stacked body in a thickness direction, and a semiconductor layer provided below the pillar member. The pillar member has a structure in which a memory film and a channel layer are stacked in order from a side of the stacked body. The channel layer has a stacked structure that includes an outer channel semiconductor layer, an intermediate layer made of an insulating material, and an inner channel semiconductor layer, from a side of the memory film. Both of the outer channel semiconductor layer and the inner channel semiconductor layer are electrically connected to the semiconductor layer.