Abstract: An object of the invention is to provide an inspection device which has a function of preventing electric discharge so that an absorbed current is detected more efficiently. In the invention, absorbed current detectors are mounted in a vacuum specimen chamber and capacitance of a signal wire from each probe to corresponding one of the absorbed current detectors is reduced to the order of pF so that even an absorbed current signal with a high frequency of tens of kHz or higher can be detected. Moreover, signal selectors are operated by a signal selection controller so that signal lines of a semiconductor parameters analyzer are electrically connected to the probes brought into contact with a sample. Accordingly, electrical characteristics of the sample can be measured without limitation of signal paths connected to the probes to transmission of an absorbed current. In addition, a resistance for slow leakage of electric charge is provided in each probe stage or a sample stage.

Abstract: Proposed is a technique of emphasizing a change in absorbed current obtained from a faulty part in a wiring section as a testing target more than in other parts of the wiring section. A specimen testing device is configured to output an image of absorbed current output from two probes during scanning of an electron beam so as to be operatively associated with the scanning of the electron beam and includes the following mechanism. When a faulty part of a wiring section on the specimen side with which two probes are in contact is irradiated with an electron beam, the resistance value at the faulty part changes more than that of irradiation of a normal wiring section with the electron beam. Such a change in resistance value is detected as a change in ratio between a resistance value of the wiring section specified by the two probes and a known resistance value.

Abstract: An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency. In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.

Abstract: A sample inspection apparatus in which a fault in a semiconductor sample can be measured and analyzed efficiently. A plurality of probes are brought into contact with the sample. The sample is irradiated with an electron beam while a current flowing through the probes is measured. Signals from at least two probes are supplied to an image processing unit so as to form an absorbed electron current image. A difference between images obtained in accordance with a temperature change of the sample is obtained. A faulty point is identified from the difference between the images.

Abstract: An object of the invention is to provide an inspection device which has a function of preventing electric discharge so that an absorbed current is detected more efficiently. In the invention, absorbed current detectors are mounted in a vacuum specimen chamber and capacitance of a signal wire from each probe to corresponding one of the absorbed current detectors is reduced to the order of pF so that even an absorbed current signal with a high frequency of tens of kHz or higher can be detected. Moreover, signal selectors are operated by a signal selection controller so that signal lines of a semiconductor parameters analyzer are electrically connected to the probes brought into contact with a sample. Accordingly, electrical characteristics of the sample can be measured without limitation of signal paths connected to the probes to transmission of an absorbed current. In addition, a resistance for slow leakage of electric charge is provided in each probe stage or a sample stage.

Abstract: An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency. In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.

Abstract: An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency. In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.

Abstract: A sample inspection apparatus in which a fault in a semiconductor sample can be measured and analyzed efficiently. A plurality of probes are brought into contact with the sample. The sample is irradiated with an electron beam while a current flowing through the probes is measured. Signals from at least two probes are supplied to an image processing unit so as to form an absorbed electron current image. A difference between images obtained in accordance with a temperature change of the sample is obtained. A faulty point is identified from the difference between the images.

Abstract: An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency. In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.