Abstract: A method for manufacturing a semiconductor thin film having high carrier mobility, and a magnetoelectric conversion element provided with the semiconductor thin film manufactured by the aforementioned method are provided. The temperature of the Si single crystal substrate is raised to 270° C. to 320° C., and an In buffer layer is formed by an electron beam heating type vacuum evaporation method. Subsequently, an initial seed layer made of Sb and In is formed. The temperature of the Si single crystal substrate is raised to 460° C. to 480° C., and thereafter, a retention time approximated by a predetermined function of the temperature of the Si single crystal substrate is provided. Then, a main growth layer made of Sb and In is formed.

Abstract: A method for manufacturing a semiconductor thin film having high carrier mobility, and a magnetoelectric conversion element provided with the semiconductor thin film manufactured by the aforementioned method are provided. The temperature of the Si single crystal substrate is raised to 270° C. to 320° C., and an In buffer layer is formed by an electron beam heating type vacuum evaporation method. Subsequently, an initial seed layer made of Sb and In is formed. The temperature of the Si single crystal substrate is raised to 460° C. to 480° C., and thereafter, a retention time approximated by a predetermined function of the temperature of the Si single crystal substrate is provided. Then, a main growth layer made of Sb and In is formed.

Abstract: A pump for low-viscosity fuel comprises a pump shaft 6 installed in a pump housing 2, 3, 4 and divided into a drive-side shaft 6A and a driven-side shaft 6B, a partition 12 provided between the drive-side shaft and the driven-side shaft of the pump shaft to prevent leakage of fuel from the housing, and a magnetic coupling 13 for transferring torque from the drive-side shaft to the driven-side shaft of the pump shaft through the partition, the magnetic coupling being disposed such that a first clearance C1, D1 between the magnetic coupling and the partition is larger than a second clearance C2, D2 between the magnetic coupling and the pump housing. When wobble occurs in the pump shaft owing to wear of the sliding contact portions thereof, the magnetic coupling makes contact with the pump housing before contacting the partition, thereby enabling the rotation of the pump shaft to be stopped before fuel leakage occurs.

Abstract: A radial piston pump for low-viscosity fuel according to a first aspect of the invention comprises a pump housing, which is constituted of as few as two structural bodies (from among a drive-side housing member 2A, a fixed cylinder 81 and a cover 4), and a leaf valve member 82 which is formed with intake valves 87 for opening and closing intake side passages 27 and discharge valves 88 for opening and closing discharge side passages 28 and is sandwiched between two structural bodies (fixed cylinder 81 and cover 4). The first aspect of the invention reduces the number of components constituting the pump housing, enables highly precise overall axial alignment, prevents wobbling of a pump shaft 9 of the pump, increases performance and reliability and reduces cost.

Abstract: A surface acoustic wave device includes a piezoelectric substrate having opposite flat surfaces. On one surface of the substrate, there are provided launching transducer for launching acoustic waves and receiving transducer for receiving the launched acoustic waves. On the other surface of the substrate, there are provided a plurality of grooves aligned in an angled relation with the direction of propagation of the acoustic waves. The grooves are divided into two or more groups in which the depth of the grooves in one group is different from that in any other group.

Abstract: A method for manufacturing an acoustic surface wave interaction device includes the steps of forming an interdigitated electrode array on one flat surface of a piezoelectric plate, covering the interdigital electrode with a thin layer of dielectric material, and applying a predetermined DC voltage across the thickness of the piezoelectric plate for polarization.