Abstract: There is provided a resist film forming apparatus including a coating unit configured to drop, rotate, and spread a resist while rotating a substrate, a heating unit configured to heat a specimen in which the resist is coated on the substrate, a metering unit configured to measure a weight of the specimen being heated, and a control unit configured to control lamination of a plurality of resist layers on the specimen by executing a process of forming a resist layer on the substrate by performing heating in the heating unit until a predetermined amount of solvent has evaporated from a resist coated on the specimen based on the measured weight of the specimen, and repeating for a predetermined number of times a process of forming a new resist layer on a resist layer formed on the specimen by similarly controlling the coating unit and the heating unit.

Abstract: There is provided a grinding apparatus including: an upper surface plate; a lower surface plate disposed facing the upper surface plate and rotating in an opposite direction to the upper surface plate; a sun gear rotated by a same rotational shaft as the upper surface plate and the lower surface plate; an internal gear rotated by the same rotational shaft as the upper surface plate and the lower surface plate; and a planetary carrier in which a holding hole that holds a workpiece is formed and which revolves while rotating in engagement with the sun gear and the internal gear. The holding hole in the planetary carrier is provided with a cutaway in a side of the holding hole that contacts a side surface of the workpiece when the planetary carrier rotates.

Abstract: A plate cylinder includes a cylindrical member, and a pattern forming plate configured by forming a predetermined pattern for printing on a flat plate-shaped substrate using microfabrication. The pattern forming plate is bent, and wound around and joined to an outer peripheral surface of the cylindrical member.

Abstract: An optical processing method includes the steps of: moving an irradiation region of light in a direction orthogonal to a width direction of a mask having openings aligned in the width direction while irradiating the light to a processing object via the mask; and when irradiating light across one width of the mask and moving the irradiation region in a latter stage after irradiation of light across one width of the mask and movement of the irradiation region in a former stage end, superimposing a part of a light irradiation portion by the irradiation of light across one width of the mask and the movement in the former stage and a part of a light irradiation portion by the irradiation of light across one width of the mask and the movement in the latter stage to make an irradiation amount equal in each irradiation line corresponding to the respective openings.

Abstract: Disclosed herein is a die manufacturing method including the steps of: forming a pattern on the machining surface of a cylindrical resin original plate by laser machining; and fabricating a cylindrical die by the electroforming method using the resin original plate having the pattern formed.

Abstract: A lot management production method in which the lot size is reduced in order to respond to an order for small volume of large variety, without increasing the intermediate inventory and reducing lead-time, however without reducing the productivity of a production of large volume of small variety. Part of the processes in a production line are performed for pieces, or products to be manufactured, in a single lot, while other processes are done for pieces in a group or aggregate of single lots.

Abstract: A lot management production method in which the lot size is reduced in order to respond to an order for small volume of large variety, without increasing the intermediate inventory and reducing lead-time, however without reducing the productivity of a production of large volume of small variety. Part of the processes in a production line are performed for pieces, or products to be manufactured, in a single lot, while other processes are done for pieces in a group or aggregate of single lots.

Abstract: A lot management production method in which the lot size is reduced in order to respond to an order for small volume of large variety, without increasing the intermediate inventory and reducing lead-time, however without reducing the productivity of a production of large volume of small variety. Part of the processes in a production line are performed for pieces, or products to be manufactured, in a single lot, while other processes are done for pieces in a group or aggregate of single lots.

Abstract: A lot management production method in which the lot size is reduced in order to respond to an order for small volume of large variety, without increasing the intermediate inventory and reducing lead-time, however without reducing the productivity of a production of large volume of small variety. Part of the processes in a production line are performed for pieces, or products to be manufactured, in a single lot, while other processes are done for pieces in a group or aggregate of single lots.

Abstract: The electrostatic chucking device 2 comprises an electrostatic chuck 4; a temperature detecting unit 10 for detecting the temperature of the electrostatic chuck 4; a power supply 9 connected to the electrostatic chuck 4 and used for impressing a DC voltage to the electrostatic chuck 4 to provide it with an attracting force; and a controller 11 for controlling the value of the DC voltage impressed by the power supply 9 according to the temperature of the electrostatic chuck detected by the temperature detecting unit 10.

Abstract: A problem in the manufacture of semiconductor wafers exists in that reaction product adhering to a quartz member is peeled off and falls on wafers, thus causing particles to contaminate the wafers. In system of introducing electro-magnetic waves from the outside via the quartz member, an inventive high-density plasma etching system for processing wafers by introducing electro-magnetic waves generated by a TCP electrode into a vacuum chamber via a quartz top board and by generating plasma by exciting gas within the chamber comprises a far infrared ray heater disposed above the quartz top board to heat the quartz top board by radiant heat of infrared rays generated from the far infrared ray heater, reducing the product adhering to the quartz member and thus the contaminating particles, thereby improving the yield of the wafers.

Abstract: A method for etching a laminated film comprising at least two layers of a semiconductor device, the method comprising: a step, in which etching of an upper layer is started with a first etching gas, and the etching of the upper layer is stopped before a lower layer is exposed; and a step, in which a remainder of the upper layer and the lower layer is etched with a second etching gas.

Abstract: An apparatus 1 for manufacturing a semiconductor device capable of actually putting the low temperature etching technique into practical use is also provided, having a vacuum chamber 2 in which a specimen stage 12 having a cooling means is disposed at the inside and a plasma generation means for generating plasmas, in which a specimen, for example, semiconductor substrate W is processed by generating plasmas while controlling the temperature of the specimen W placed on a specimen stage 12 by cooling the specimen stage 12 by a cooling means. The cooling means uses a liquefied gas or a gas as a coolant, the flow channel for the coolant is formed by arranging in parallel a plurality of pipelines 21a-21d having diameters different from each other at positions before flowing to the specimen stage, and the specimen stage 12 is cooled by flowing the coolant through the pipelines 21a-21d.

Abstract: The electrostatic chucking device 2 comprises an electrostatic chuck 4; a temperature detecting unit 10 for detecting the temperature of the electrostatic chuck 4; a power supply 9 connected to the electrostatic chuck 4 and used for impressing a DC voltage to the electrostatic chuck 4 to provide it with an attracting force; and a controller 11 for controlling the value of the DC voltage impressed by the power supply 9 according to the temperature of the electrostatic chuck detected by the temperature detecting unit 10.

Abstract: A method of dry etching treatment capable of attaining both high selectivity and fine fabrication at a high accuracy simultaneously is provided, in which an etching treatment comprising a plurality of steps are applied to a specimen W in one identical processing apparatus, and the temperature of the specimen is changed between etching of one step and etching of another step succeeding thereto, among the plurality of the steps, thereby applying etching at temperatures different between the one step and the step succeeding thereto.

Abstract: There are provided a static electricity chuck which can vary the temperature of a wafer in a short time without adversely effecting throughput, and a wafer stage having the static electricity chuck. The static electricity chuck includes a dielectric member 4 formed of insulating material, an electrode 5 of conductor which is disposed at the lower side of the dielectric member 4, and a heater 6 which is disposed at the lower side of the electrode 5 and heats the dielectric member 4. The wafer stage 1 includes the static electricity chuck which is provided on a metal jacket having cooling apparatus.

Abstract: Disclosed is a wafer stage allowing a plasma process under a heating condition at a high temperature, particularly, 400.degree. C. or more using the improved electrostatically chucking technology with the increased temperature-controllability. The wafer stage includes an electrostatic chuck and a temperature adjusting jacket disposed under said electrostatic chuck. The electrostatic chuck includes: a dielectric member made from an insulating material; an electrode formed of a brazing layer, which is disposed on the underside of said dielectric member for fixing said dielectric member; an aluminum nitride plate disposed on the underside of said electrode, to which said dielectric member is fixed through said electrode; a heater, disposed on the underside of said aluminum nitride plate, for heating said dielectric member; and a metal plate disposed on the underside of said aluminum nitride plate and also at least on a top or bottom side of said heater.

Abstract: A plasma treatment method and system allowing the plasma intensity to be controllably distributed perpendicularly to the inner wall and ensuring effective and uniform treatment in the case of executing plasma cleaning, plasma CVD, RIE or the like. In the plasma treatment where plasma is generated within a chamber 1 for plasma treatment, magnetic field 31 is applied perpendicularly to the inner wall of the chamber to produce plasma whose intensity is directed perpendicularly to the inner wall of the chamber or in parallel with the surface to be treated. Further, the magnetic filed 31 rendered into a revolving field 32 may be applied to rotate the plasma to accomplish a uniform and effective treatment.