Abstract: A varistor component includes a first varistor element and a second varistor element. The electrostatic capacitance of the first varistor element and the electrostatic capacitance of the second varistor element are different.

Abstract: A multilayer device includes: a dielectric; a signal line provided inside the dielectric and including a portion exposed on an outer surface of the dielectric; a ground electrode provided inside or on the outer surface of the dielectric and including at least a portion exposed on the outer surface of the dielectric; a plurality of planar electrodes provided inside the dielectric, arranged parallel to the ground electrode, and arranged in a first direction, and; a plurality of connecting electrodes that are provided inside the dielectric and connect the plurality of planar electrodes and the ground electrode; a plurality of signal terminals provided on the outer surface of the dielectric and connected to the signal line; and a plurality of ground terminals provided on the outer surface of the dielectric and connected to the ground electrode.

Abstract: A varistor component includes: a varistor-material sintered body; a first external electrode provided on a portion of a first lateral surface; a second external electrode provided on a portion of the first lateral surface; and a third external electrode provided on a portion of a second lateral surface. The first external electrode, the second external electrode, and the third external electrode are not provided on a third lateral surface or a fourth lateral surface. The first external electrode and the second external electrode are spaced apart from each other in a first direction on the first lateral surface. The third external electrode provided on the second lateral surface is located between the first external electrode and the second external electrode, when viewed in a second direction.

Abstract: An electronic control device includes: a first input-output terminal and a second input-output terminal through which differential signals are input and output; a transceiver integrated circuit (IC) that transmits and receives the differential signals; a first line that connects the first input-output terminal and the transceiver IC; and a second line that connects the second input-output terminal and the transceiver IC. A first capacitance that is a capacitance between the first line and a ground is at least 80 pF and at most 220 pF, and a second capacitance that is a capacitance between the second line and the ground is at least 80 pF and at most 220 pF.

Abstract: A radio frequency amplifier circuit includes a transistor and an output-side matching circuit. The output-side matching circuit includes a first distributed constant line to which a radio frequency signal from the transistor is transmitted, a flat plate lead terminal transmitting the radio frequency signal from the first distributed constant line to an outside of the package, and a capacitive element having one electrode that is connected to the lead terminal and the other electrode that is grounded. A back surface of the lead terminal is joined to a resin substrate, and the capacitive element and the first distributed constant line are disposed adjacent to each other, with an alignment direction of the capacitive element and the first distributed constant line intersecting an alignment direction of the first distributed constant line and the lead terminal.

Abstract: A radio frequency power amplifier includes: an amplifying element which amplifies an input signal and outputs the signal from an output terminal; and an output load circuit which includes a first resonant circuit and a second resonant circuit that are connected to the output terminal. The first resonant circuit has a resonance frequency higher than the frequency of the second harmonic of the input signal, and the second resonant circuit has a resonance frequency lower than the frequency of the third harmonic of the input signal. The output load circuit has such an impedance looking from the output terminal that a phase of a reflection coefficient at the second harmonic of the input signal is greater than 180 degrees and less than 360 degrees, and a phase of a reflection coefficient at the third harmonic of the input signal is greater than 0 degrees and less than 180 degrees.

Abstract: A semiconductor package according to the present invention includes: a semiconductor element where a high frequency signal is input or output; a planar lead terminal having an end electrically connected to an input terminal or an output terminal of the semiconductor element; an encapsulation resin for encapsulating the lead terminal and the semiconductor element, the lead terminal having another end exposed from the resin; and a ground enhancing metal body encapsulated in the encapsulation resin, having a first main surface facing the lead terminal and a second main surface exposed from the encapsulation resin, wherein the ground enhancing metal body has a shape with a cross section parallel to the second main surface and having a smaller area than an area of the first main surface.

Abstract: An aspect of the present invention provides a microwave heating device for an object having a plurality of parts, the microwave heating device including: a plurality of antennas which emits microwaves to a heating chamber inside; a sensor which detects information from a block model assigned the information indicating a characteristic of each of the parts; a display and input operation unit configured to receive an input of heating conditions for the object; an electromagnetic field analysis unit configured to derive a heating profile by electromagnetic field analysis based on the information detected by the sensor and the heating conditions inputted to the display and input operation unit, the heating profile including microwave emitting conditions for the object; and a control unit configured to control performance of the microwaves emitted from the antennas based on the derived heating profile.

Abstract: A radio frequency amplifier circuit includes a transistor and an output-side matching circuit. The output-side matching circuit includes a first distributed constant line to which a radio frequency signal from the transistor is transmitted, a flat plate lead terminal transmitting the radio frequency signal from the first distributed constant line to an outside of the package, and a capacitive element having one electrode that is connected to the lead terminal and the other electrode that is grounded. A back surface of the lead terminal is joined to a resin substrate, and the capacitive element and the first distributed constant line are disposed adjacent to each other, with an alignment direction of the capacitive element and the first distributed constant line intersecting an alignment direction of the first distributed constant line and the lead terminal.

Abstract: A radio frequency amplifier circuit includes: low-output transistors, each of which includes an input terminal, an output terminal, and a ground terminal, and amplifies a radio frequency signal; a harmonic processing circuit provided for each of the low-output transistors to be connected to the output terminal of the low-output transistor, and processing a secondary harmonic included in an amplified radio frequency signal, and a resistor connected to the output terminal of each of the low-output transistors. The input terminal of each of the low-output transistors is connected to an input terminal of the radio frequency amplifier circuit via an inductor, and the output terminal of each of the low-output transistors is connected to the other output terminal via the resistance and is further connected to an output terminal of the radio frequency amplifier circuit via an inductor.

Abstract: A resonator using the MEMS technology is provided which improves the accuracy of a shape of electrodes so as avoid a short circuit that would otherwise be caused between input and output electrodes to thereby increase the reliability thereof. A resonator includes a substrate 101, an insulation layer 102 formed selectively on the substrate 101 as a sacrificial surface, a beam 103 formed on the substrate 101 via a space, a first support portion 104A formed on the insulation layer 102 of the same material as that of the beam 103, and electrodes formed with a space defined between the beam 103 and themselves for signals to be inputted thereinto and outputted therefrom. A sectional area of the beam 103 and a sectional area of the first support portion 104A are substantially equal in a section which is perpendicular to a longitudinal direction of the beam 103.

Abstract: A semiconductor package according to the present invention includes: a semiconductor element where a high frequency signal is input or output; a planar lead terminal having an end electrically connected to an input terminal or an output terminal of the semiconductor element; an encapsulation resin for encapsulating the lead terminal and the semiconductor element, the lead terminal having another end exposed from the resin; and a ground enhancing metal body encapsulated in the encapsulation resin, having a first main surface facing the lead terminal and a second main surface exposed from the encapsulation resin, wherein the ground enhancing metal body has a shape with a cross section parallel to the second main surface and having a smaller area than an area of the first main surface.

Abstract: A radio frequency amplifier circuit according to the present invention is for providing a radio frequency amplifier circuit with high output and high efficiency, and includes (i) a first harmonic processing circuit (102) and (ii) a second harmonic processing circuit (103) which are connected to an output terminal of transistors (101), and a (iii) fundamental matching circuit (104) connected to a downstream of the first harmonic processing circuit (102) and the second harmonic processing circuit (103). The radio frequency amplifier circuit includes plural first harmonic processing circuits (102) and plural second harmonic processing circuits (103).

Abstract: A radio frequency power amplifier includes: an amplifying element which amplifies an input signal and outputs the signal from an output terminal; and an output load circuit which includes a first resonant circuit and a second resonant circuit that are connected to the output terminal. The first resonant circuit has a resonance frequency higher than the frequency of the second harmonic of the input signal, and the second resonant circuit has a resonance frequency lower than the frequency of the third harmonic of the input signal. The output load circuit has such an impedance looking from the output terminal that a phase of a reflection coefficient at the second harmonic of the input signal is greater than 180 degrees and less than 360 degrees, and a phase of a reflection coefficient at the third harmonic of the input signal is greater than 0 degrees and less than 180 degrees.

Abstract: A radio frequency amplifier circuit includes: low-output transistors, each of which includes an input terminal, an output terminal, and a ground terminal, and amplifies a radio frequency signal; a harmonic processing circuit provided for each of the low-output transistors to be connected to the output terminal of the low-output transistor, and processing a secondary harmonic included in an amplified radio frequency signal, and a resistor connected to the output terminal of each of the low-output transistors. The input terminal of each of the low-output transistors is connected to an input terminal of the radio frequency amplifier circuit via an inductor, and the output terminal of each of the low-output transistors is connected to the other output terminal via the resistance and is further connected to an output terminal of the radio frequency amplifier circuit via an inductor.

Abstract: A radio frequency amplifier circuit according to the present invention is for providing a radio frequency amplifier circuit with high output and high efficiency, and includes (i) a first harmonic processing circuit (102) and (ii) a second harmonic processing circuit (103) which are connected to an output terminal of transistors (101), and a (iii) fundamental matching circuit (104) connected to a downstream of the first harmonic processing circuit (102) and the second harmonic processing circuit (103). The radio frequency amplifier circuit includes plural first harmonic processing circuits (102) and plural second harmonic processing circuits (103).

Abstract: A resonator using the MEMS technology is provided which improves the accuracy of a shape of electrodes so as avoid a short circuit that would otherwise be caused between input and output electrodes to thereby increase the reliability thereof. A resonator includes a substrate 101, an insulation layer 102 formed selectively on the substrate 101 as a sacrificial surface, a beam 103 formed on the substrate 101 via a space, a first support portion 104A formed on the insulation layer 102 of the same material as that of the beam 103, and electrodes formed with a space defined between the beam 103 and themselves for signals to be inputted thereinto and outputted therefrom. A sectional area of the beam 103 and a sectional area of the first support portion 104A are substantially equal in a section which is perpendicular to a longitudinal direction of the beam 103.

Abstract: A film bulk acoustic wave resonator including a piezoelectric body 1, and a first electrode 2 and a second electrode 3 that are provided respectively on the main surfaces of the piezoelectric body, the piezoelectric body being applied an electric field through the first and the second electrodes so as to generate a resonant vibration. A first mass load material portion 4 having an annular shape is provided outside the planar region of the first electrode on the main surface of the piezoelectric body, a mass load effect thereof being larger than that of the first electrode. The outer periphery of the first electrode and the inner periphery of the first mass load material portion are spaced apart from each other, whereby the first electrode and the first mass load material portion are electrically insulated from each other. The first mass load material portion has a laminated structure including a first auxiliary electrode layer 2a and a load material layer 4a formed on the auxiliary electrode layer.

Abstract: A dual mode piezoelectric filter includes a piezoelectric material layer composed of a piezoelectric thin film of the high-cut type formed on a substrate, a first electrode and a second electrode formed on one of the major surfaces of the piezoelectric material layer with a gap provided therebetween, a third electrode formed on the other major surface of the piezoelectric material layer opposite to the first electrode, the second electrode, and the gap, and an interelectrode mass load element formed in the gap or at a position opposite to the gap on a surface of the piezoelectric material layer. The relationships (?1×h1)?(?a×ha) and (?2×h2)?(?a×ha) are satisfied, where h1 is the thickness and ?1 is the density of the first electrode, h2 is the thickness and ?2 is the density of the second electrode, and ha is the thickness and ?a is the density of the interelectrode mass load element. A filter characteristic with a smooth passband and low losses is obtained.

Abstract: A piezoelectric filter comprises a substrate and a plurality of piezoelectric resonators provided on the same substrate. Each piezoelectric resonator comprises a cavity formed in the substrate, a lower electrode formed on the substrate, covering the cavity, a piezoelectric material layer formed on the lower electrode, and an upper electrode formed on the piezoelectric material layer. At least one of the piezoelectric resonators has a cavity formed of a plurality of cells.