Abstract: The present invention aims to provide a nanomesh laminate with which a conductive nanomesh material can be easily placed on a desired site and which is less likely to undergo distortion upon attachment. The object is achieved with a nanomesh laminate including: a mesh-shaped base material (A); and a nanomesh layer (B) containing a polyvinyl alcohol resin as a main component; the mesh-shaped base material (A) and the nanomesh layer (B) being layered next to each other, preferably achieved with a nanomesh laminate including: a nanomesh layer (B) containing polyvinyl alcohol as a main component; and a conductive substance layer (C); on a mesh-shaped base material (A).

Abstract: To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m2/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 ?m and at most 1 ?m, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s.

Abstract: To provide an interlayer filler composition which, in 3D lamination of semiconductor device chips, forms a highly thermally conductive filling interlayer simultaneously with the bonding of solder bumps or the like and lands between semiconductor device chips, a coating fluid and a process for producing a three-dimensional integrated circuit. An interlayer filler composition for a three-dimensional integrated circuit, which comprises a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s and a flux (B), the content of the flux (B) being at least 0.1 part by weight and at most 10 parts by weight per 100 parts by weight of the resin (A).

Abstract: To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m2/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 ?m and at most 1 ?m, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s.

Abstract: To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m2/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 ?m and at most 1 ?m, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s.

Abstract: To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m2/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 ?m and at most 1 ?m, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s.

Abstract: To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m2/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 ?m and at most 1 ?m, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s.

Abstract: To provide an interlayer filler composition which, in 3D lamination of semiconductor device chips, forms a highly thermally conductive filling interlayer simultaneously with the bonding of solder bumps or the like and lands between semiconductor device chips, a coating fluid and a process for producing a three-dimensional integrated circuit. An interlayer filler composition for a three-dimensional integrated circuit, which comprises a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s and a flux (B), the content of the flux (B) being at least 0.1 part by weight and at most 10 parts by weight per 100 parts by weight of the resin (A).

Abstract: A liquid crystal polyimide, containing: repeating units of formula (I) and having liquid crystallinity, wherein A1 and A2 are each independently a tetravalent residue of a tetracarboxylic acid, B1 is a residue of a bis(amino) polysiloxane of formula (II), and C1 is a residue of an organic diamine, wherein R1 to R6 are each independently a lower alkyl group, x is from 0 to 10, D1 is an alkylene group, y is 0 or 1, and Z1 is selected from the group consisting of —H, —CH3, CF3, —F, —CN and —NO2. In addition, a liquid crystal resin composition and a resin film for a semiconductor element containing the liquid crystal polyimide.

Abstract: A liquid crystal polyimide, containing: repeating units of formula (I) and having liquid crystallinity, wherein A1 and A2 are each independently a tetravalent residue of a tetracarboxylic acid, B1 is a residue of a bis(amino)polysiloxane of formula (II), and C1 is a residue of an organic diamine, wherein R1 to R6 are each independently a lower alkyl group, x is from 0 to 10, D1 is an alkylene group, y is 0 or 1, and Z1 is selected from the group consisting of —H, —CH3, CF3, —F, —CN and —NO2. In addition, a liquid crystal resin composition and a resin film for a semiconductor element containing the liquid crystal polyimide.

Abstract: To improve either stability of emission characteristics with respect to time or with respect to inter-device fluctuation. On this purpose, in a light emitting device comprising the first luminescent material, and the second luminescent material absorbing light from said first luminescent material and emitting light, the phosphor included in said second luminescent material is used, the absorption spectrum of which satisfies the formula (1) below. 1?P(?)min/P(?)max?0.3 ??(I) (In the formula (I) above, P(?) indicates the intensity of the absorption spectrum at the wavelength a, P(?)max indicates the maximum value of P(?) in the range of 400 nm???450 nm, and P(?)min indicates the minimum value of P(?) in the range of 400 nm???450 nm.