Abstract: This semiconductor device includes a semiconductor element mounted on a metal layer, first to third connection terminals that are provided on the semiconductor element, a first bus bar bonded to the first connection terminal, and a second bus bar bonded to the second connection terminal. The semiconductor element is bonded to the metal layer, and the first to third connection terminals are disposed on a top surface of the semiconductor element. One end of the first bus bar is bonded to the first connection terminal, another end of the first bus bar is an output unit, one end of the second bus bar is bonded to the second connection terminal, and another end of the second bus bar is bonded to the metal layer. A first surface of the semiconductor element and the second bus bar are at an identical potential.

Abstract: This semiconductor device includes a semiconductor element mounted on a metal layer, first to third connection terminals that are provided on the semiconductor element, a first bus bar bonded to the first connection terminal, and a second bus bar bonded to the second connection terminal. The semiconductor element is bonded to the metal layer, and the first to third connection terminals are disposed on a top surface of the semiconductor element. One end of the first bus bar is bonded to the first connection terminal, another end of the first bus bar is an output unit, one end of the second bus bar is bonded to the second connection terminal, and another end of the second bus bar is bonded to the metal layer. A first surface of the semiconductor element and the second bus bar are at an identical potential.

Abstract: In a method for manufacturing a module, a substrate is placed above a resin bath while a electronic component is directed downward. In addition, a resin thrown into the resin bath is softened until it becomes flowable. Then, a first surface of the substrate is brought into contact with a liquid surface of the softened resin. The softened resin is allowed to flow forcibly into a gap between the substrate and the electronic component. Then, the resin cures, and a resin portion is formed. Further, a metal thin film is formed on the surface of the resin portion by sputtering to form the shield metal film.

Abstract: In a method of manufacturing a high-frequency module, a resin substrate with a high frequency circuit including an electronic component mounted thereon is placed so that the electronic component faces a resin bath. A resin which is in a non-flowable state in the resin bath is softened until the resin becomes flowable, and air in space formed between the resin substrate and the resin is sucked. The resin substrate is brought into contact with a liquid surface of the resin. The resin is pressurized and allowed to flow into a gap between the resin substrate and the electronic component. The resin is cured so that a resin portion is formed on the resin substrate. A shield metal film is formed on a surface of the resin portion.

Abstract: A module includes a board having a through-hole provided therein, an auxiliary board provided on a lower surface of the board, a first electronic component mounted on an upper surface of the board, a conductive cover covering the first electronic component, and a second electronic component mounted on an upper surface of the auxiliary board. The auxiliary board includes a sealing portion sealing the through-hole. The second electronic component is positioned in the through-hole provided in the board and on the upper surface of the auxiliary board. The second electronic component is taller than the first electronic component. This module is thin.

Abstract: A high-frequency module has an attached shield case. Barrier 36 of the shield case has wall 37 provided by being bent from ceiling section 32; wall 38 that is opposed to wall 37 and that is provided by being bent from ceiling section 32; and linkage section 39 for linking the tip end of wall 38 to the tip end of wall 37. The shield case further has: a crossing section at which wall 37 crosses ceiling section 32 and side plate 33; notches 43 respectively provided at the crossing sections at which wall 38, ceiling section 32 and side plate 33 cross one another; and division section 44 extending downward from notches 43 for segmentalizing side plate 33. A boundary between circuit block 4 and circuit block 5 is provided at a position corresponding to barrier 36. Connection section 34 is connected to the ground of circuit block 4 or circuit block 5. As a result, a module having a superior shielding performance can be provided to prevent leakage of a signal from a circuit provided on the printed circuit board.

Abstract: A high-frequency module attached with a shield case. Barrier 36 of the shield case has wall 37 provided by being bent from ceiling section 32; wall 38 that is opposed to wall 37 and that is provided by being bent from ceiling section 32; and linkage section 39 for linking the tip end of wall 38 to the tip end of wall 37. The shield case further has: a crossing section at which wall 37 crosses ceiling section 32 and side plate 33; notches 43 respectively provided at the crossing sections at which wall 38, ceiling section 32 and side plate 33 cross one another; and division section 44 for segmentalizing side plate 33 from notches 43 in downward direction. The boundary between circuit block 4 and circuit block 5 is provided at a position corresponding to barrier 36. Connection section 34 is connected to the ground of circuit block 4 or circuit block 5.