Patents by Inventor Tomohiko Akatsuka
Tomohiko Akatsuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10508222Abstract: A polishing composition used in an application to polish silicon nitride is characterized by containing colloidal silica in which an organic acid, such as a sulfonic acid or a carboxylic acid, is immobilized, and having a pH of 6 or less.Type: GrantFiled: April 30, 2018Date of Patent: December 17, 2019Assignee: FUJIMI INCORPORATEDInventors: Takahiro Mizuno, Shuugo Yokota, Yasuyuki Yamato, Tomohiko Akatsuka
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Patent number: 10144907Abstract: The purpose of the present invention is to provide a means to sufficiently remove impurities remaining on the surface of a polishing object after CMP. The polishing composition of the present invention is a polishing composition which is used after polishing has been performed by using a polishing composition (A) including abrasive grains or an organic compound (A), and is characterized by including an organic compound (B) which includes at least one atom selected from the group consisting of a fluorine atom, an oxygen atom, a nitrogen atom, and a chlorine atom and has a molecular weight of 100 or more, a pH adjusting agent, and 0 to 1% by mass of abrasive grains.Type: GrantFiled: January 30, 2015Date of Patent: December 4, 2018Assignee: FUJIMI INCORPORATEDInventors: Shuugo Yokota, Shota Suzuki, Tomohiko Akatsuka, Yasuyuki Yamato, Koichi Sakabe, Yoshihiro Izawa, Yukinobu Yoshizaki, Chiaki Saito
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Patent number: 10144849Abstract: A polishing composition contains a nitrogen-containing compound and abrasive grains, and the pH of the composition is in the range of 1 to 7. The nitrogen-containing compound in the polishing composition preferably has a structure expressed by a formula: R1—N(—R2)—R3 in which R1, R2, and R3 each represent an alkyl group with or without a characteristic group, two of R1 to R3 may form a part of a heterocycle, and two of R1 to R3 may be identical and form a part of a heterocycle with the remaining one. Alternatively, the nitrogen-containing compound is preferably selected from a group consisting of a carboxybetaine type ampholytic surfactant, a sulfobetaine type ampholytic surfactant, an imidazoline type ampholytic surfactant, and an amine oxide type ampholytic surfactant. A polishing composition may contain a water-soluble polymer and abrasive grains, and the pH of the composition is in the range of 1 to 8.Type: GrantFiled: January 29, 2009Date of Patent: December 4, 2018Assignee: FUJIMI INCORPORATEDInventors: Takahiro Mizuno, Yoshihiro Izawa, Tomohiko Akatsuka
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Publication number: 20180244957Abstract: A polishing composition used in an application to polish silicon nitride is characterized by containing colloidal silica in which an organic acid, such as a sulfonic acid or a carboxylic acid, is immobilized, and having a pH of 6 or less.Type: ApplicationFiled: April 30, 2018Publication date: August 30, 2018Applicant: FUJIMI INCORPORATEDInventors: Takahiro MIZUNO, Shuugo YOKOTA, Yasuyuki YAMATO, Tomohiko AKATSUKA
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Patent number: 9834703Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a group III-V compound material. The polishing composition contains abrasive grains, an oxidizing agent, and a water-soluble polymer. When the polishing composition is left to stand for one day in an environment with a temperature of 25° C., the water-soluble polymer may be adsorbed on the abrasive grains at 5,000 or more molecules per 1 ?m2 of the surface area of the abrasive grains. Alternatively, the water-soluble polymer may be a compound that reduces the water contact angle of the portion containing a group III-V compound material of the object after being polished with the polishing composition.Type: GrantFiled: November 21, 2012Date of Patent: December 5, 2017Assignee: FUJIMI INCORPORATEDInventors: Shuugo Yokota, Yasuyuki Yamato, Satoru Yarita, Tomohiko Akatsuka
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Patent number: 9816010Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises an oxidizing agent and abrasive grains having an average primary particle diameter of 40 nm or less. The polishing composition preferably further contains a hydrolysis-suppressing compound that bonds to a surface OH group of the portion containing a silicon material of the object to function to suppress hydrolysis of the portion containing a silicon material. Alternatively, a polishing composition of the present invention contains abrasive grains, an oxidizing agent, and a hydrolysis-suppressing compound. The polishing composition preferably has a neutral pH.Type: GrantFiled: June 11, 2015Date of Patent: November 14, 2017Assignee: FUJIMI INCORPORATEDInventors: Shuugo Yokota, Yasuyuki Yamato, Satoru Yarita, Tomohiko Akatsuka, Shuichi Tamada
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Patent number: 9688884Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises odd-shaped abrasive grains and an oxidizing agent having a standard electrode of 0.3 V or more, and preferably further contains a salt, such as an ammonium salt. The pH of the polishing composition is 1 or more and 6 or less, or 8 or more and 14 or less. The average degree of association of the abrasive grains, obtained by dividing the value of the average secondary particle diameter of the abrasive grains by the value of the average primary particle diameter of the abrasive grains, is preferably 1.6 or more.Type: GrantFiled: November 21, 2012Date of Patent: June 27, 2017Assignee: FUJIMI INCORPORATEDInventors: Shuugo Yokota, Yasuyuki Yamato, Satoru Yarita, Tomohiko Akatsuka, Shuichi Tamada
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Publication number: 20170175053Abstract: The purpose of the present invention is to provide a means to sufficiently remove impurities remaining on the surface of a polishing object after CMP. The polishing composition of the present invention is a polishing composition which is used after polishing has been performed by using a polishing composition (A) including abrasive grains or an organic compound (A), and is characterized by including an organic compound (B) which includes at least one atom selected from the group consisting of a fluorine atom, an oxygen atom, a nitrogen atom, and a chlorine atom and has a molecular weight of 100 or more, a pH adjusting agent, and 0 to 1% by mass of abrasive grains.Type: ApplicationFiled: January 30, 2015Publication date: June 22, 2017Applicant: FUJIMI INCORPORATEDInventors: SHUUGO YOKOTA, Shota SUZUKI, Tomohiko AKATSUKA, Yasuyuki YAMATO, Koichi SAKABE, Yoshihiro IZAWA, Yukinobu YOSHIZAKI, Chiaki SAITO
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Patent number: 9640407Abstract: A polishing composition of the present invention contains a water-soluble polymer having a hydrophilic group, and abrasive grains. A hydrophobic silicon-containing part after being polished with the polishing composition has a water contact angle lower than that of the hydrophobic silicon-containing part after being polished with another composition having the same makeup as the polishing composition except that the water-soluble polymer is not contained therein. Examples of the water-soluble polymer include polysaccharides and alcohol compounds. Another polishing composition of the present invention contains abrasive grains having a silanol group, and a water-soluble polymer. When this polishing composition is left to stand for one day in an environment at a temperature of 25° C., the water-soluble polymer is adsorbed on the abrasive grains at 5,000 or more molecules per 1 ?m2 of surface area of the abrasive grains.Type: GrantFiled: May 31, 2012Date of Patent: May 2, 2017Assignee: FUJIMI INCORPORATEDInventors: Yasuyuki Yamato, Youhei Takahashi, Tomohiko Akatsuka
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Patent number: 9434046Abstract: The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition. The polishing composition contains a nitrogen-containing nonionic surfactant and abrasive grains and has a pH of 9 to 12. The content of the nitrogen-containing nonionic surfactant in the polishing composition is preferably 20 to 500 ppm. The abrasive grains contained in the polishing composition are preferably colloidal silica. The average primary particle diameter of the abrasive grains contained in the polishing composition is preferably 10 to 90 nm. The content of the abrasive grains in the polishing composition is preferably 1.0 to 5.0% by mass.Type: GrantFiled: June 21, 2013Date of Patent: September 6, 2016Assignee: Fujimi IncorporatedInventors: Mikikazu Shimizu, Tomohiko Akatsuka, Kazuya Sumita
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Patent number: 9422454Abstract: A polishing composition of the present invention contains a water-soluble polymer and abrasive grains. The water-soluble polymer is an anionic compound having an acid dissociation constant pKa of 3 or less. Specific examples of such a compound include polyvinylsulfonic acid, polystyrenesulfonic acid, polyallylsulfonic acid, polyethyl acrylate sulfonic acid, polybutyl acrylate sulfonic acid, poly(2-acrylamide-2-methylpropanesulfonic acid), and polyisoprenesulfonic acid. The abrasive grains exhibit a negative zeta potential at a pH of 3.5 or less. Specific examples of such abrasive grains include colloidal silica.Type: GrantFiled: April 4, 2013Date of Patent: August 23, 2016Assignee: FUJIMI INCORPORATEDInventors: Yasuyuki Yamato, Tomohiko Akatsuka
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Publication number: 20160203994Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a group III-V compound material. The polishing composition contains an oxidizing agent and an anticorrosive agent. The anticorrosive agent is preferably a nitrogen-containing organic compound, such as 1H-1,2,4-triazole and benzotriazole, or an organic compound having a carboxyl group, for example, dicarboxylic acid, such as malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, and tartaric acid, or tricarboxylic acid, such as citric acid.Type: ApplicationFiled: March 22, 2016Publication date: July 14, 2016Applicant: FUJIMI INCORPORATEDInventors: Shuugo YOKOTA, Yasuyuki YAMATO, Satoru YARITA, Tomohiko AKATSUKA
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Patent number: 9238755Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises an oxidizing agent and abrasive grains having an average primary particle diameter of 40 nm or less. The polishing composition preferably further contains a hydrolysis-suppressing compound that bonds to a surface OH group of the portion containing a silicon material of the object to function to suppress hydrolysis of the portion containing a silicon material. Alternatively, a polishing composition of the present invention contains abrasive grains, an oxidizing agent, and a hydrolysis-suppressing compound. The polishing composition preferably has a neutral pH.Type: GrantFiled: November 21, 2012Date of Patent: January 19, 2016Assignee: FUJIMA INCORPORATEDInventors: Shuugo Yokota, Yasuyuki Yamato, Satoru Yarita, Tomohiko Akatsuka, Shuichi Tamada
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Publication number: 20150287609Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises an oxidizing agent and abrasive grains having an average primary particle diameter of 40 nm or less. The polishing composition preferably further contains a hydrolysis-suppressing compound that bonds to a surface OH group of the portion containing a silicon material of the object to function to suppress hydrolysis of the portion containing a silicon material. Alternatively, a polishing composition of the present invention contains abrasive grains, an oxidizing agent, and a hydrolysis-suppressing compound. The polishing composition preferably has a neutral pH.Type: ApplicationFiled: June 11, 2015Publication date: October 8, 2015Applicant: FUJIMI INCORPORATEDInventors: Shuugo YOKOTA, Yasuyuki YAMATO, Satoru YARITA, Tomohiko AKATSUKA, Shuichi TAMADA
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Publication number: 20150132955Abstract: A polishing composition of the present invention contains a water-soluble polymer and abrasive grains. The water-soluble polymer is an anionic compound having an acid dissociation constant pKa of 3 or less. Specific examples of such a compound include polyvinylsulfonic acid, polystyrenesulfonic acid, polyallylsulfonic acid, polyethyl acrylate sulfonic acid, polybutyl acrylate sulfonic acid, poly(2-acrylamide-2-methylpropanesulfonic acid), and polyisoprenesulfonic acid. The abrasive grains exhibit a negative zeta potential at a pH of 3.5 or less. Specific examples of such abrasive grains include colloidal silica.Type: ApplicationFiled: April 4, 2013Publication date: May 14, 2015Applicant: FUJIMI INCORPORATEDInventors: Yasuyuki Yamato, Tomohiko Akatsuka
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Publication number: 20140342561Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a group III-V compound material. The polishing composition contains abrasive grains, an oxidizing agent, and a water-soluble polymer. When the polishing composition is left to stand for one day in an environment with a temperature of 25° C., the water-soluble polymer may be adsorbed on the abrasive grains at 5,000 or more molecules per 1 ?m2 of the surface area of the abrasive grains. Alternatively, the water-soluble polymer may be a compound that reduces the water contact angle of the portion containing a group III-V compound material of the object after being polished with the polishing composition.Type: ApplicationFiled: November 21, 2012Publication date: November 20, 2014Inventors: Shuugo Yokota, Yasuyuki Yamato, Satoru Yarita, Tomohiko Akatsuka
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Publication number: 20140342560Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a group III-V compound material. The polishing composition contains an oxidizing agent and an anticorrosive agent. The anticorrosive agent is preferably a nitrogen-containing organic compound, such as 1H-1,2,4-triazole and benzotriazole, or an organic compound having a carboxyl group, for example, dicarboxylic acid, such as malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, and tartaric acid, or tricarboxylic acid, such as citric acid.Type: ApplicationFiled: November 21, 2012Publication date: November 20, 2014Inventors: Shuugo Yokota, Yasuyuki Yamato, Satoru Yarita, Tomohiko Akatsuka
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Publication number: 20140342562Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises odd-shaped abrasive grains and an oxidizing agent having a standard electrode of 0.3 V or more, and preferably further contains a salt, such as an ammonium salt. The pH of the polishing composition is 1 or more and 6 or less, or 8 or more and 14 or less. The average degree of association of the abrasive grains, obtained by dividing the value of the average secondary particle diameter of the abrasive grains by the value of the average primary particle diameter of the abrasive grains, is preferably 1.6 or more.Type: ApplicationFiled: November 21, 2012Publication date: November 20, 2014Inventors: Shuugo Yokota, Yasuyuki Yamato, Satoru Yarita, Tomohiko Akatsuka, Shuichi Tamada
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Publication number: 20140322913Abstract: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises an oxidizing agent and abrasive grains having an average primary particle diameter of 40 nm or less. The polishing composition preferably further contains a hydrolysis-suppressing compound that bonds to a surface OH group of the portion containing a silicon material of the object to function to suppress hydrolysis of the portion containing a silicon material. Alternatively, a polishing composition of the present invention contains abrasive grains, an oxidizing agent, and a hydrolysis-suppressing compound. The polishing composition preferably has a neutral pH.Type: ApplicationFiled: November 21, 2012Publication date: October 30, 2014Inventors: Shuugo Yokota, Yasuyuki Yamato, Satoru Yarita, Tomohiko Akatsuka, Shuichi Tamada
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Patent number: 8703007Abstract: A polishing composition of the present invention contains an oxidant, an anticorrosive, and a surfactant comprising a compound represented by Chemical Formula 1: One to three of R1 to R5 in Chemical Formula 1 are alkyl groups, alkynyl groups, alkenyl groups, aryl groups, or arylalkylene groups, one is a hydrogen atom or an alkyl group having 1 to 9 carbon atoms, and the remainder are hydrogen atoms. O—R6 is oxyethylene, oxypropylene, or a random or block conjugate of oxyethylene and oxypropylene. n is an integer of 1 or more. X is an OSO3? group, an OPO32? group, or an OH group.Type: GrantFiled: January 20, 2011Date of Patent: April 22, 2014Assignee: Fujimi IncorporatedInventors: Tomohiko Akatsuka, Yasuto Ishida, Kanako Fukuda, Yoshihiro Kachi, Hisanori Tansho