Patents by Inventor Tomohiko Hayashi

Tomohiko Hayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040141130
    Abstract: There is provided an electro-optical device including, above a substrate, data lines extending in a first direction, scanning lines extending in a second direction and intersecting the data lines, pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; and storage capacitors electrically connected to the thin film transistors and the pixel electrodes, the thin film transistors including semiconductor layers having channel regions which extend in a longitudinal direction and channel adjacent regions which extend further from the channel regions in the longitudinal direction, and the scanning lines including light-shielding parts disposed at sides of the channel regions.
    Type: Application
    Filed: October 28, 2003
    Publication date: July 22, 2004
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Hidenori Kawata, Yoshifumi Tsunekawa, Tomohiko Hayashi
  • Publication number: 20040056297
    Abstract: The invention provides a substrate device having thin film transistors (TFTs), each including a semiconductor layer and capacitors formed above the TFTs, that are provided on a substrate. Each of the capacitors can include a first electrode electrically connected to a part of the semiconductor layer, a second electrode arranged to face the first electrode, and a dielectric film including a nitride film arranged between the first electrode and the second electrode on the substrate. Further, the nitride film has an aperture facing the semiconductor layer as seen in plan view. Accordingly, it is possible to effectively hydrogenate the semiconductor layer using the aperture.
    Type: Application
    Filed: August 5, 2003
    Publication date: March 25, 2004
    Applicant: Seiko Epson Corporation
    Inventors: Takunori Iki, Tomohiko Hayashi
  • Patent number: 6670636
    Abstract: A semiconductor layer, including a source region, a channel region, and a drain region, is formed on a substrate, and a gate insulation film, formed of a silicon oxide film, is formed on the semiconductor layer. Subsequently, nitrogen atoms are introduced in the gate insulation film so that the nitrogen atoms exist in at least one of the silicon oxide film and an interface between the silicon oxide film and the semiconductor layer. Thereafter, a gate electrode film is formed on the gate insulation film. With this arrangement, good transistor characteristics can be maintained for a long period of time in a substrate device on which a TFT is formed, and further it is difficult for the substrate device to be affected by an environment in which it is used, such as by humidity, temperature, and the like.
    Type: Grant
    Filed: June 12, 2001
    Date of Patent: December 30, 2003
    Assignee: Seiko Epson Corporation
    Inventors: Tomohiko Hayashi, Kiyotaka Koide
  • Publication number: 20030202267
    Abstract: An electro-optical device includes a substrate; pixel electrodes disposed above the substrate; switching elements; an interlayer insulating film disposed at a position higher than the switching elements and lower than the pixel electrodes; contact holes, disposed in the insulating film, to connect the switching elements to the corresponding pixel electrodes; and filler, disposed in the corresponding contact holes, including a conductive material. Therefore, light leakage caused by vacant contact holes disposed in a layered structure on a substrate is reduced or prevented, thereby displaying a high-quality image.
    Type: Application
    Filed: March 14, 2003
    Publication date: October 30, 2003
    Applicant: Seiko Epson Corporation
    Inventors: Yasuji Yamasaki, Tomohiko Hayashi
  • Publication number: 20020008239
    Abstract: A semiconductor layer, including a source region, a channel region, and a drain region, is formed on a substrate, and a gate insulation film, formed of a silicon oxide film, is formed on the semiconductor layer. Subsequently, nitrogen atoms are introduced in the gate insulation film so that the nitrogen atoms exist in at least one of the silicon oxide film and an interface between the silicon oxide film and the semiconductor layer. Thereafter, a gate electrode film is formed on the gate insulation film. With this arrangement, good transistor characteristics can be maintained for a long period of time in a substrate device on which a TFT is formed, and further it is difficult for the substrate device to be affected by an environment in which it is used, such as by humidity, temperature, and the like.
    Type: Application
    Filed: June 12, 2001
    Publication date: January 24, 2002
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Tomohiko Hayashi, Kiyotaka Koide
  • Patent number: 6036368
    Abstract: A dynamic pressure bearing device comprises a rotary member mounted for rotation, and a dynamic pressure bearing rotatably supporting the rotary member. The dynamic pressure bearing has a stationary portion and a disk integrally connected to the stationary portion. The disk has surface portions defining thrust dynamic pressure bearing portions for supporting the rotary member in an axial direction and a radial dynamic pressure bearing portion for supporting the rotary member in a radial direction. A gap is disposed between the dynamic pressure bearing and the rotary member for receiving oil. A space is provided in fluid communication with the gap. The space has a central portion slanted downwardly in the radial direction for preventing leakage of the oil and has a diameter increasing gradually from the central portion in the radial direction.
    Type: Grant
    Filed: December 9, 1997
    Date of Patent: March 14, 2000
    Assignee: Seiko Seiki Kabushiki Kaisha
    Inventors: Isamu Takehara, Tomohiko Hayashi
  • Patent number: 5820954
    Abstract: A coiled steel strip for the manufacture of a three-piece can body having, on one surface corresponding to the outer surface of the can body, a multiple-layer organic film including a thermoplastic resin layer and a layer of inks arranged on said thermoplastic resin layer to represent a label of a content to be filled in the can, and on the other surface corresponding to the inner surface of the can body, a film or films of a thermosetting coating and/or a thermoplastic resin, said multiple layer organic film extending continuously along the length direction of said strip in a plurality of stripes, each having a width slightly smaller than the circumferential length of the can body and being arranged such that said strip has spaces of a width of 1 to 10 mm at both sides of each such stripe, free from coverage by said organic film, and said film or films of a thermosetting coating and/or a thermoplastic resin extending continuously along the length direction of said strip in a plurality of stripes, each having
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: October 13, 1998
    Assignees: Nippon Steel Corporation, Daiwa Can Company
    Inventors: Yashichi Ooyagi, Tomohiko Hayashi, Mitsutoshi Inoue, Michiyuki Kakimoto, Ryuichi Eguchi
  • Patent number: 5597436
    Abstract: A process for producing a laminated steel strip for the manufacture of a three-piece can body comprises providing a roll of printed thermoplastic resin film having a plurality of stripes of printed portions carrying a layer of inks representing repetitive images of a label, with the stripes of printed portions being spaced from one another, slitting the printed thermoplastic film into a plurality of printed portion stripes, and then bonding the plurality of stripes to a surface of the steel sheet. Each printed portion stripe, which is separated from adjacent stripes, has a width slightly smaller than the circumferential length of the can body to be cut from said strip. Stripes of another thermoplastic resin may be bonded to the other surface of the steel strip in alignment with the printed portion stripes.
    Type: Grant
    Filed: June 6, 1995
    Date of Patent: January 28, 1997
    Assignees: Nippon Steel Corporation, Daiwa Can Company
    Inventors: Yashichi Ooyagi, Tomohiko Hayashi, Mitsutoshi Inoue, Michiyuki Kakimoto, Ryuichi Eguchi
  • Patent number: 4497850
    Abstract: The present invention relates to a method for forming on a magnetic amorphous alloy a film which is extremely thin, insulating, and corrosion-resistant and, particularly, can prevent secular deterioration of magnetic properties due to changing of the surface properties of the magnetic amorphous alloy.The method of the present invention comprises the steps of: applying, on the surface of the magnetic amorphous alloy, a predetermined amount of an acidic solution containing chromic acid, phosphoric acid, and a fluorine compound; and drying and baking the acidic aqueous solution, thereby forming, on the magnetic amorphous alloy, a film substantially comprised of a chromium and a phosphoric compound.
    Type: Grant
    Filed: May 11, 1984
    Date of Patent: February 5, 1985
    Assignee: Nippon Steel Corporation
    Inventors: Akimi Umezono, Hironobu Kawasaki, Takashi Sato, Tomohiko Hayashi
  • Patent number: 4487812
    Abstract: The present invention relates to a magnetic amorphous alloy sheet having an improved insulating property and improved corrosion resistance.The present invention aims to provide a film which is used to cover the magnetic amorphous alloy sheet, thereby improving its corrosion resistance and increasing the layer insulation resistance, without impairing the magnetic properties.The film according to the present invention has a thickness of up to 1 .mu.m and comprises a chromium compound which comprises hydrated chromium oxide. The film may additionally comprises metallic chromium.The magnetic amorphous alloy according to the present invention is suitable for use as a transformer core achieving a high building factor.
    Type: Grant
    Filed: July 15, 1983
    Date of Patent: December 11, 1984
    Assignee: Nippon Steel Corporation
    Inventors: Hironobu Kawasaki, Takashi Sato, Tomohiko Hayashi, Tsutomu Ozawa