Abstract: A gripping mechanism (3) includes a gripping roller (32) and a holder (31) that houses the gripping roller (32). A gripped portion (42) of a first component (4) is gripped between an outer surface of the gripping roller (32) and an inner surface of the holder (31) through action of gravity acting on the gripping roller (32). Preferably, the gripping roller (32) includes a core (321) that is cylindrical or columnar in shape and a covering section (322) that is an elastic body covering a circumferential surface of the core (321). Preferably, the covering section (322) has a circumferential surface with a friction coefficient greater than a friction coefficient of the circumferential surface of the core (321).

Abstract: A catalyst structure for synthesis gas production of a synthesis gas that contains carbon monoxide and hydrogen, the catalyst structure being provided with a carrier that has a porous structure, while being configured from a zeolite type compound; first catalyst particles that contain one or more iron group elements which are selected from the group consisting of nickel (Ni), iron (Fe) and cobalt (Co); and second catalyst particles that contain one or more platinum group elements which are selected from the group consisting of platinum (Pt), palladium (Pd), rhodium (Rh) and ruthenium (Ru). The catalyst structure for synthesis gas production has passages in communication with each other within the carrier. The first catalyst particles are present at least in the passages of the carrier; and the second catalyst particles are present at least either inside the carrier or on the outer surface of the carrier.

Abstract: A semiconductor device includes a nitride semiconductor layer, a source electrode, a drain electrode, and an insulating gate portion. The nitride semiconductor layer has an element part and a peripheral withstand voltage part. The source electrode is disposed adjacent to a first main surface of the nitride semiconductor layer. The drain electrode is disposed adjacent to a second main surface of the nitride semiconductor layer. The nitride semiconductor layer is formed with a first groove on the first main surface in the element part, and a second groove on the first main surface in the peripheral withstand voltage part. A JFET region is embedded in the first groove in the element part. An inclination angle of a side surface of the first groove adjacent to a channel portion of a body region is smaller than an inclination angle of a side surface of the second groove.

Abstract: Provided is a synthesis gas production catalyst structure or the like which can maintain stable high catalytic activity for a long period of time without degradation and can allow efficient production of a synthesis gas including carbon monoxide and hydrogen. The synthesis gas production catalyst structure 1 for use in producing a synthesis gas comprising carbon monoxide and hydrogen, the synthesis gas production catalyst structure 1 including: supports 10 each having a porous structure and including a zeolite-type compound; and at least one catalytic material 20 present in the supports 10, in which each of the supports 10 has channels 11 communicating with one another, each of the supports 10 has a ratio (L/d ratio) of long side dimension L to thickness dimension d of 5.0 or more, and the catalytic material 20 is present at least in the channel 11 of each of the supports 10.

Abstract: A method of manufacturing a ceramic electronic component such that Voids of the ceramic element and voids at the interfaces between the ceramic element and the external electrodes are filled with a resin composition by applying, to the ceramic electronic component, a resin-containing solution that has the function of etching the surface of the ceramic element to ionize constituent elements of the ceramic element. The resin composition includes a resin, and cationic elements among the constituent elements of the ceramic elements, which are ionized and deposited from the ceramic element.

Abstract: A surface-modified glass that includes glass containing at least one multivalent metal ion; and a silicate film on a surface of the glass, the silicate film containing a multivalent metal ion in common with that of the glass.

Abstract: A method of manufacturing a semiconductor device is provided, and the method may include: preparing a semiconductor substrate constituted of a group III nitride semiconductor, a main surface of the semiconductor substrate being a c-plane; forming a grove on the main surface by dry dry-etching the main surface; and wet-etching an inner surface of the groove using an etchant to expose the c-plane of the semiconductor substrate in a wet-etched region, the etching having an etching rate to the c-plane of the semiconductor substrate that is lower than the etching rate to a plane other than the c-plane of the semiconductor substrate.

Abstract: Image display control by which effective correction is performed even for a biased change in a source potential for one frame in a liquid crystal display device is achieved. A liquid crystal display device (2) includes a correction unit that corrects a source voltage value to a pixel. The correction unit calculates a correction amount by using an integrated value of a source potential for previous one frame instead of an integrated value of the source potential for next one frame. The liquid crystal display device (2) applies the source voltage based on the correction amount to the pixel.

Abstract: A semiconductor device may include a semiconductor layer; a source electrode disposed above one main surface of the semiconductor layer; a drain electrode disposed below another main surface of the semiconductor layer; and an insulation gate section. The semiconductor layer may include a drift region of a first conductivity type; a JFET region of the first conductivity type disposed above the drift region; a body region of a second conductivity type disposed above the drift region and adjoining the JFET region; and a source region of the first conductivity type separated from the JFET region by the body region. The insulation gate section may be opposed to a portion of the body region that separates the JFET region and the source region, a space may be provided within the semiconductor layer, and the drift region, the JFET region and the body region may be exposed to the space.

Abstract: A method of manufacturing a semiconductor device is provided, and the method may include: preparing a semiconductor substrate constituted of a group III nitride semiconductor, a main surface of the semiconductor substrate being a c-plane; forming a grove on the main surface by dry dry-etching the main surface; and wet-etching an inner surface of the groove using an etchant to expose the c-plane of the semiconductor substrate in a wet-etched region, the etching having an etching rate to the c-plane of the semiconductor substrate that is lower than the etching rate to a plane other than the c-plane of the semiconductor substrate.

Abstract: Image display control by which effective correction is performed even for a biased change in a source potential for one frame in a liquid crystal display device is achieved. A liquid crystal display device (2) includes a correction unit that corrects a source voltage value to a pixel. The correction unit calculates a correction amount by using an integrated value of a source potential for previous one frame instead of an integrated value of the source potential for next one frame. The liquid crystal display device (2) applies the source voltage based on the correction amount to the pixel.

Abstract: An electronic component includes a main body composed of an insulator, a coating film covering the main body, a circuit element located inside the main body, and outer electrodes. The insulator contains a metal magnetic powder. The coating film is composed of a resin and a cationic element contained in the insulator.

Abstract: A semiconductor device may include a semiconductor layer; a source electrode disposed above one main surface of the semiconductor layer; a drain electrode disposed below another main surface of the semiconductor layer; and an insulation gate section. The semiconductor layer may include a drift region of a first conductivity type; a JFET region of the first conductivity type disposed above the drift region; a body region of a second conductivity type disposed above the drift region and adjoining the JFET region; and a source region of the first conductivity type separated from the JFET region by the body region. The insulation gate section may be opposed to a portion of the body region that separates the JFET region and the source region, a space may be provided within the semiconductor layer, and the drift region, the JFET region and the body region may be exposed to the space.

Abstract: An electronic component includes a main body composed of an insulator, a coating film covering the main body, a circuit element located inside the main body, and outer electrodes. The insulator contains a metal magnetic powder. The coating film is composed of a resin and a cationic element contained in the insulator.

Abstract: An electronic component includes a main body composed of an insulator, a coating film covering the main body, a circuit element located inside the main body, and outer electrodes. The insulator contains a metal magnetic powder. The coating film is composed of a resin and a cationic element contained in the insulator.

Abstract: A semiconductor device includes an n-type first drift layer, an i-type or an n-type withstand voltage layer disposed on top of the first drift layer, a p-type body layer disposed on top of the withstand voltage layer, an n-type second drift layer that is disposed on top of the first drift layer, is in contact with side surfaces of the withstand voltage layer and the body layer, an n-type source layer that is disposed on top of the body layer, is separated from the first drift layer, the second drift layer, and the withstand voltage layer by the body layer, and a gate electrode that faces the body layer through a gate insulating film, the body layer being positioned between the second drift layer and the source layer. The withstand voltage layer is made from a material having a bandgap larger than that of the first drift layer.

Abstract: A semiconductor device includes a semiconductor substrate, a source electrode, a drain electrode, and a gate electrode disposed on the semiconductor substrate via a gate insulator film. The semiconductor substrate includes a first portion constituted of GaN and a second portion constituted of AlxGa(1-x)N (0<x?1). The first portion includes an n-type source region being in contact with the source electrode, an n-type drain region being in contact with the drain electrode, a p-type body region intervening between the source region and the drain region and being in contact with the source electrode, and an n-type drift region intervening between the body region and the drain region and having a carrier density that is lower than a carrier density of the drain region. The second portion includes a barrier region being in contact with each of the source electrode, the body region and the drift region.

Abstract: A liquid crystal display device according to the present invention has a display area that includes a plurality of pixels (Px). The display area is made up of n kinds of domains (where n is an integer that is equal to or greater than two and equal to or smaller than four). The directors of the n kinds of domains define mutually different alignment directions. If the domain structure of each pixel (Px) is defined by the kinds of the domains that form the pixel (Px), the number k of the kinds of the domains that form the pixel (Px), and the arrangement of the domains in the pixel (Px), the display area includes a pixel, of which k is less than n and of which the domain structure is different from the domain structures of adjacent pixels.

Abstract: A switching element includes a semiconductor substrate that includes a first n-type semiconductor layer, a p-type body layer constituted by an epitaxial layer, and a second n-type semiconductor layer separated from the first n-type semiconductor layer by the body layer, a gate insulating film that covers a range across the surface of the first n-type semiconductor layer, the surface of the body layer, and the surface of the second n-type semiconductor layer, and a gate electrode that faces the body layer through the gate insulating film. An interface between the first n-type semiconductor layer and the body layer includes an inclined surface. The inclined surface is inclined such that the depth of the body layer increases as a distance from an end of the body layer increases in a horizontal direction. The inclined surface is disposed below the gate electrode.

Abstract: A ceramic electronic component that includes a ceramic element, and a coating film and external electrodes that are provided on the surface of the ceramic element. The coating film is selectively formed on the surface of the ceramic element by applying, to the ceramic electronic component, a resin-containing solution containing at least one anion of a sulfuric acid, a sulfonic acid, a carboxylic acid, a phosphoric acid, a phosphoric acid, and a hydrofluoric acid.