Abstract: A method of crystallizing a silicon thin film, which enables uniforming the size of a crystalline grain of the silicon thin film, includes: a second process of stacking, on a substrate, a first gate electrode having a first reflectivity; a third process of stacking a second gate electrode on the first gate electrode, the second gate electrode having a second reflectivity lower than the first reflectivity and including a top face having an area smaller than an area of the top face of the first gate electrode; a fourth process of stacking a gate insulation film to cover a first region and a second region; a fifth process of stacking a noncrystalline silicon thin film on the stacked gate insulation film; and a sixth process of crystallizing the noncrystalline silicon thin film by irradiating the noncrystalline silicon thin film from above with a laser beam.

Abstract: A thin-film transistor device includes a gate electrode formed above a substrate, a gate insulating film formed on the gate electrode, a crystalline silicon thin film that is formed above the gate insulating film and has a channel region, an amorphous silicon thin film formed on the crystalline silicon thin film, and a source electrode and a drain electrode that are formed above the channel region, and the crystalline silicon thin film has a half-width of a Raman band corresponding to a phonon mode specific to the crystalline silicon thin film of 5.0 or more and less than 6.0 cm?1, and an average crystal grain size of about 50 nm or more and 300 nm or less.

Abstract: A thin-film device includes: a first device unit having a first gate electrode and a first crystalline silicon thin film located opposite to the first gate electrode; and a second device unit having a second gate electrode and a second crystalline silicon thin film located opposite to the second gate electrode. The first crystalline silicon thin film includes a strip-shaped first area and a second area smaller than the strip-shaped first area in average grain size. The first device unit has, as a channel, at least a part of the strip-shaped first area. The second silicon thin film includes a second crystalline area smaller than the strip-shaped first area in average grain size. The second device unit has the second crystalline area as a channel. The strip-shaped first area includes crystal grains in contact with the second area on each side of the strip-shaped first area.

Abstract: A method of thin film formation includes: preparing a substrate; forming a thin film above the substrate; and crystallizing the thin film by irradiating the thin film with a light beam, in which the crystallizing includes steps of: crystallizing the thin film in a first region into a first crystalline thin film by irradiating the first region while scanning a first light beam relative to the substrate, the first region including at least one of: edge portions of the substrate; and a region through which a cutting line passes when the substrate is cut; and subsequently crystallizing the thin film in a second region into a second crystalline thin film by irradiating at least the second region while scanning a second light beam relative to the substrate, and the thin film has a higher absorption ratio of the second light beam than that of the first crystalline thin film.

Abstract: A thin-film transistor device includes a gate electrode formed above a substrate, a gate insulating film formed on the gate electrode, a crystalline silicon thin film that is formed above the gate insulating film and has a channel region, an amorphous silicon thin film formed on the crystalline silicon thin film, and a source electrode and a drain electrode that are formed above the channel region, and the crystalline silicon thin film has a half-width of a Raman band corresponding to a phonon mode specific to the crystalline silicon thin film of 5.0 or more and less than 6.0 cm?1, and an average crystal grain size of about 50 nm or more and 300 nm or less.

Abstract: A method of manufacturing a substrate having a thin film thereabove includes: forming a thin film above the substrate; and crystallizing at least a predetermined area of the silicon thin film into a crystallized area through relative scan of the silicon thin film which is performed while the thin film is being irradiated with a continuous wave light beam, wherein in the crystallizing, a projection of the light beam on the thin film has a major axis in a direction crossing a direction of the relative scan, and the formed crystallized area includes a strip-shaped first area extending in the direction crossing the direction of the relative scan and a second area adjacent to the strip-shaped first area, the strip-shaped first area including crystal grains having an average grain size larger than that of crystal grains in the second area.

Abstract: A crystalline silicon thin film is formed by irradiating a silicon thin film with a laser beam. The laser beam is a continuous wave laser beam. An intensity distribution of the laser beam in a first region about a center of the intensity distribution is symmetric on an anterior side and a posterior side of the center. The intensity distribution in a second region about the center is asymmetric on the anterior side and the posterior side. The first region is from the maximum intensity of the laser beam at the center to an intensity half of the maximum intensity. The second region is at most equal to the half of the maximum intensity of the laser beam. In the second region, an integral intensity value on the posterior side is larger than on the anterior side.

Abstract: A probe shape detection apparatus includes a magnetic field sensing section for sensing a magnetic field generated by an electromagnetic coil in a flexible probe, a movement speed calculation section for calculating a movement speed of the coil, a coordinate computation section for calculating three-dimensional coordinates of the coil based on the sensed magnetic field, a moving average coordinate calculation section for calculating moving average coordinates of the coil, a comparison section for comparing the calculated movement speed with a predetermined threshold, a coil coordinate setting section for setting one of the moving average coordinates and the three-dimensional coordinates calculated by the coordinate computation section as the three-dimensional coordinates of the coil, based on a comparison result of the calculated moving speed, and a signal processing section for generating a video signal to display a shape of the probe, based on the set three-dimensional coordinates of the coil.

Abstract: A medical instrument including a distortion detection probe disposed in an insertion portion to be inserted into the interior of an examinee provided with a plurality of FBG sensor sections that detect distortion of the insertion portion, a coordinate calculation section that calculates first three-dimensional coordinates of the respective FBG sensor sections according to a first three-dimensional coordinate system whose origin is a predetermined position based on the detection results of the FBG sensor sections, a coordinate system setting section that sets a second three-dimensional coordinate system based on the first three-dimensional coordinates of the respective FBG sensor sections, a coordinate transformation section that transforms the first three-dimensional coordinates of the respective FBG sensor sections into second three-dimensional coordinates according to the second three-dimensional coordinate system set by the coordinate system setting section and a shape display section that displays the sha

Abstract: A probe shape detection apparatus includes a magnetic field sensing section for sensing a magnetic field generated by an electromagnetic coil in a flexible probe, a movement speed calculation section for calculating a movement speed of the coil, a coordinate computation section for calculating three-dimensional coordinates of the coil based on the sensed magnetic field, a moving average coordinate calculation section for calculating moving average coordinates of the coil, a comparison section for comparing the calculated movement speed with a predetermined threshold, a coil coordinate setting section for setting one of the moving average coordinates and the three-dimensional coordinates calculated by the coordinate computation section as the three-dimensional coordinates of the coil, based on a comparison result of the calculated moving speed, and a signal processing section for generating a video signal to display a shape of the probe, based on the set three-dimensional coordinates of the coil.

Abstract: A crystalline silicon thin film is formed by irradiating a silicon thin film with a laser beam. The laser beam is a continuous wave laser beam. An intensity distribution of the laser beam in a first region about a center of the intensity distribution is symmetric on an anterior side and a posterior side of the center. The intensity distribution in a second region about the center is asymmetric on the anterior side and the posterior side. The first region is from the maximum intensity of the laser beam at the center to an intensity half of the maximum intensity. The second region is at most equal to the half of the maximum intensity of the laser beam. In the second region, an integral intensity value on the posterior side is larger than on the anterior side.

Abstract: An endoscope insertion shape detecting device of the present invention comprises an insertion shape detection portion for detecting an insertion shape of an endoscope insertion portion, an insertion shape image generation portion for generating an insertion shape figure of the endoscope insertion portion according to the insertion shape, a marking processing portion for carrying out a control to add a mark to the insertion shape figure for output as a control for the insertion shape image generation portion in a first observation for the subject, a memory portion for storing subject information, the insertion shape figure, and information on a position to which the mark is added in the insertion shape figure, and a position detection information output portion for outputting position detection information when a distal end portion of the insertion shape figure overlaps the mark position information in second observation made for the same subject.

Abstract: An endoscope inserted-shape detecting apparatus 8 includes a sense coil unit 23 in which multiple sense coil groups of sense coil groups 23A to 23I for detecting magnetic fields generated by multiple source coils 21 in an inserted-shape detecting probe 6 are placed as a part of the endoscope inserted-shape detecting apparatus 8, a signal detecting section 33, a source coil position analyzing section 35 and a signal control section 37 that selects a magnetic-field detecting element to be used for detection of a magnetic field signal based on the magnetic field generated by each of the source coils 21 from the sense coil groups 23A to 23I in a control section based on positional information signals outputted from the source coil position analyzing section 35.

Abstract: A driving block includes a plurality of magnetic-field generating elements and a driving signal generating section, and the magnetic field generated by the plurality of magnetic-field generating elements is detected by a plurality of magnetic-field detecting elements. A shape calculating block calculates a shape of an insertion portion of an endoscope based on a frequency component corresponding to a frequency of the driving signal in a detection signal detected by the plurality of magnetic-field detecting elements. Oscillation frequency of the reference clock for deciding the frequency of the driving signal is changeably set by the frequency setting section, and the reference clock with oscillation frequency set by the frequency setting section is supplied to both of the driving block and the shape calculating block.

Abstract: A method of crystallizing a silicon thin film, which enables uniforming the size of a crystalline grain of the silicon thin film, includes: a second process of stacking, on a substrate, a first gate electrode having a first reflectivity; a third process of stacking a second gate electrode on the first gate electrode, the second gate electrode having a second reflectivity lower than the first reflectivity and including a top face having an area smaller than an area of the top face of the first gate electrode; a fourth process of stacking a gate insulation film to cover a first region and a second region; a fifth process of stacking a noncrystalline silicon thin film on the stacked gate insulation film; and a sixth process of crystallizing the noncrystalline silicon thin film by irradiating the noncrystalline silicon thin film from above with a laser beam.

Abstract: To provide a method of manufacturing a crystalline semiconductor film having a crystal structure with favorable in-plane uniformity. The method includes: irradiating an amorphous semiconductor film with a continuous-wave laser beam to increase a temperature of the amorphous semiconductor film to a range of 600° C. to 1100° C., the continuous-wave laser beam having a light intensity distribution continuously convex upward on each of major and minor axes; crystallizing the amorphous semiconductor film at the temperature increased to the range of 600° C. to 1100° C.; and increasing a crystal grain size of the crystallized amorphous semiconductor film, as a result of an increase in an in-plane temperature of the crystallized amorphous film to a range of 1100° C. to 1414° C. by latent heat released in the crystallizing of the amorphous semiconductor film.

Abstract: A medical instrument including a distortion detection probe disposed in an insertion portion to be inserted into the interior of an examinee provided with a plurality of FBG sensor sections that detect distortion of the insertion portion, a coordinate calculation section that calculates first three-dimensional coordinates of the respective FBG sensor sections according to a first three-dimensional coordinate system whose origin is a predetermined position based on the detection results of the FBG sensor sections, a coordinate system setting section that sets a second three-dimensional coordinate system based on the first three-dimensional coordinates of the respective FBG sensor sections, a coordinate transformation section that transforms the first three-dimensional coordinates of the respective FBG sensor sections into second three-dimensional coordinates according to the second three-dimensional coordinate system set by the coordinate system setting section and a shape display section that displays the sha

Abstract: A source coil drive circuit section of an endoscope shape detection device includes, an oscillator that generates a sine wave and an amplifier that amplifies the sine wave and generates (drives) an alternating magnetic field to source coils through a switch section. The switch section is configured to switch a direct current to an output of the amplifier and supply to the source coils. In the source coil drive circuit section, a direct current resistance value detection section for measuring a direct current resistance value of the source coils by voltage drop when the switch section is supplying the direct current to the source coils is provided.

Abstract: A medical image recording system easily obtains information of a device, etc. used at the time of an examination without conscious effort on operator's part, and records image information and the device information, which are obtained at the time of the examination, by making a 1-to-1 association between them. The system comprises at least an image information obtaining unit obtaining an observation image at the time of an examination for a medical treatment, a device information obtaining unit obtaining information of a device used at the time of the examination, and a recording unit recording information composing of the image information obtained by the image information obtaining unit and the device information obtained by the device information obtaining unit, as one associated information.

Abstract: To facilitate a connection operation between a signal processing device and an endoscope apparatus in which a processing system that performs signal processing of image pickup signals of an electronic endoscope and a processing system that calculates an insertion shape of the endoscope are integrated, a scope connector 41 of the endoscope has a connector for inputting signals from UPD coils 58, and can be connected to an endoscope system controlling device 5 via an adaptor 42 together with other video signals and the like.