Abstract: A semiconductor device and an optical print head, an image forming apparatus that has the semiconductor device are supplied capable of reduce occurrence probability of defect. The semiconductor device is formed by using semiconductor thin film bonded on the substrate, and includes a covering layer that covers at least one part region of the semiconductor thin film and covers at least one part of electroconductive member connecting with the semiconductor thin film.

Abstract: An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer.

Abstract: Provided is a technique of effectively extracting the beams of light excited in an LED light emitter other than the light beams emitted from a light-emitting region in the direction of a light-extraction surface. A pit with a tapered sidewall is formed in a substrate. A thin-film semiconductor element is attached to the pit. Light beams emitted from a side surface of the thin-film semiconductor element are reflected by the sidewall of the thin-film semiconductor element. Achieved thereby is effective extraction of light beams other than the light beams emitted from the light-emitting region in the direction of the light-extraction surface.

Abstract: A thin-film semiconductor element is formed on a plastic substrate in a semiconductor device. A thermal expansion buffer layer is interposed between the thin-film semiconductor element and the plastic substrate. Although the thin-film semiconductor element is made from a material with a thermal expansion coefficient differing from the thermal expansion coefficient of the plastic substrate, the thermal expansion buffer layer interposed between the thin-film semiconductor element and the plastic substrate protects the thin-film semiconductor element from damage caused by mechanical stress in the device fabrication process due to the different thermal expansion coefficients, enabling the semiconductor device to function reliably.

Abstract: A semiconductor device includes a plurality of light emitting elements formed of a thin layer of a compound semiconductor and arranged in a row in one direction with an equal interval therebetween. Each of the light emitting elements includes a light emitting area formed on a surface thereof; a first conductive type side electrode formed on the surface and electrically connected to one side of the light emitting element; and a second conductive type side electrode formed on the surface and electrically connected to the other side of the light emitting element. Further, the first conductive type side electrode is disposed at a position continuously surrounding at lease two sides of the light emitting area of the light emitting area with an insulating film inbetween. The second conductive type side electrode is disposed on the light emitting area.

Abstract: A light emitting panel includes a plurality of light emitting element arrays each of which has a plurality of light emitting elements arranged in a plane. The light emitting element arrays are configured so that an arrangement plane of the light emitting elements of one light emitting element array is overlapped with another arrangement plane of the light emitting elements of another light emitting element array in substantially parallel to each other, and so that the light emitting elements of one light emitting element array and the light emitting elements of another light emitting element array emit lights to the same side.

Abstract: A semiconductor device is supplied which is able to efficiently liberate heat produced by semiconductor element toward external, prevent temperature rise, improve operation characteristic and maintain stable operation. The semiconductor device comprises a substrate and a semiconductor thin film layer which is accumulated on the substrate and contains semiconductor element, the substrate is a metal substrate, between the metal substrate and the semiconductor thin film layer, a diamond-like carbon layer with high heat conductivity and good insulativity is furnished as a surface coating layer.

Abstract: A nitride semiconductor wafer includes a substrate; a nitride compound semiconductor layer formed on the substrate; and an AlxGa1-xAs layer (x?0.6) formed between the substrate and the nitride semiconductor layer. The nitride compound semiconductor layer is formed of a nitride compound in a group III to a group V.

Abstract: The present invention supplied a display apparatus using plastic substrate instead of glass substrate, which can solve such problems that the plastic substrate has a low heat conductivity and its heat release performance becomes bad so that it is difficult to obtain stable performance and reliability. In the display apparatus, inner surface electrode integrated with vertical wiring between plastic substrate and thin film LED 102 is accumulated, the inner surface electrode acts as a heat release layer for releasing heat produced inside the thin film LED 102.

Abstract: A semiconductor device includes a plurality of light emitting elements formed of a thin layer of a compound semiconductor and arranged in a row in one direction with an equal interval therebetween. Each of the light emitting elements includes a light emitting area formed on a surface thereof; a first conductive type side electrode formed on the surface and electrically connected to one side of the light emitting element; and a second conductive type side electrode formed on the surface and electrically connected to the other side of the light emitting element. Further, the first conductive type side electrode is disposed at a position continuously surrounding at lease two sides of the light emitting area of the light emitting area with an insulating film inbetween. The second conductive type side electrode is disposed on the light emitting area.

Abstract: A semiconductor combined device includes a substrate and a light emitting element disposed on the substrate. The light emitting element includes a mesa slope inclined relative to the substrate by a first angle; a light emitting portion extending in parallel to the substrate; an interlayer insulation layer covering the mesa slope and having a surface at the mesa slope inclined relative to the substrate by a second angle smaller than the first angle; an electrode connected to the light emitting portion; and a protection layer covering the light emitting portion.

Abstract: A composite semiconductor device includes a semiconductor thin film, a substrate, connection pads, and a light blocking layer. The semiconductor thin film includes light emitting elements. The driver circuits are formed on the substrate and the semiconductor thin film is fixed on the substrate, the driver circuit driving the light emitting element. The connection pads are formed on the substrate, electrical connection being made through which the connection pads. The light blocking layer is formed in an area between the light emitting element and the connection pad, the light blocking layer. The light blocking layer prevents light emitted from the light emitting element from reaching wires connected to the connection pad.

Abstract: A composite semiconductor device includes a plurality of semiconductor thin films and a substrate on which the semiconductor thin films are attached. Each semiconductor thin film includes a plurality of semiconductor elements. Each semiconductor element includes a first contact region and a second contact region. The first contact region is connected to a first electrode, and the second contact region is connected to a second electrode. The semiconductor thin film is attached to a substrate such that the plurality of semiconductor elements are aligned in a row, and such that the first contact region and the second contact region are in the row of light emitting elements.

Abstract: A composite semiconductor device includes a substrate, a plurality of circuits, a semiconductor thin film layer, and a dummy pattern. The circuits are formed on the substrate, and include one or more wiring layers. The semiconductor thin film layer includes semiconductor elements and is disposed on an uppermost surface of the one or more layers. A dummy pattern is formed in an area where the one or more wiring layers are absent. A spin-coated layer is formed between the semiconductor thin film layer and the wiring layers. The spin-coated layer may be formed of an organic material or an oxide material.