Abstract: A resin composition includes a resin A, a resin C, and a solvent. The resin A includes a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A. The resin A has a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A. The resin C includes a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A. A content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass.

Abstract: A resin composition includes a resin A, a resin C, and a solvent. The resin A includes a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A. The resin A has a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A. The resin C includes a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A. A content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass.

Abstract: A resin composition includes a resin A, a resin C, and a solvent. The resin A includes a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A. The resin A has a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A. The resin C includes a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A. A content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass.

Abstract: A resist pattern-forming method includes applying a photoresist composition directly or indirectly on a front face of a substrate to form a photoresist film. A topcoat layer is laminated directly or indirectly on a front face of the photoresist film. The photoresist film is subjected to liquid immersion lithography in a presence of a liquid immersion liquid on a front face of the topcoat layer. Part of the topcoat layer is removed after subjecting the photoresist film to the liquid immersion lithography. The photoresist film is developed after the part of the topcoat layer is removed.

Abstract: A resin composition includes a resin A, a resin C, and a solvent. The resin A includes a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A. The resin A has a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A. The resin C includes a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A. A content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass.

Abstract: A resist pattern-forming method includes applying a photoresist composition directly or indirectly on a front face of a substrate to form a photoresist film. A topcoat layer is laminated directly or indirectly on a front face of the photoresist film. The photoresist film is subjected to liquid immersion lithography in a presence of a liquid immersion liquid on a front face of the topcoat layer. Part of the topcoat layer is removed after subjecting the photoresist film to the liquid immersion lithography. The photoresist film is developed after the part of the topcoat layer is removed.

Abstract: It is an object of the present invention to improve the curability of a resin composition and a photosensitive composition suitably employed to form e.g., a surface protecting film and an interlaminar insulating film of e.g., an electronic part, while reducing the internal stress remaining in a substrate when the composition is used to form a cured film on the substrate. The photosensitive composition includes a resin (A) having a phenolic hydroxyl group, a crosslinking agent (B1) having at least two oxazoline groups and a crosslinking agent (B2) having at least two groups represented by —CH2OR (wherein R is a hydrogen atom, an alkyl group having 1 to 10 carbon atoms or an acetyl group) and a photosensitive acid-generating agent (C).

Abstract: It is an object of the present invention to improve the curability of a resin composition and a photosensitive composition suitably employed to form e.g., a surface protecting film and an interlaminar insulating film of e.g., an electronic part, while reducing the internal stress remaining in a substrate when the composition is used to form a cured film on the substrate. The photosensitive composition includes a resin (A) having a phenolic hydroxyl group, a crosslinking agent (B1) having at least two oxazoline groups and a crosslinking agent (B2) having at least two groups represented by —CH2OR (wherein R is a hydrogen atom, an alkyl group having 1 to 10 carbon atoms or an acetyl group) and a photosensitive acid-generating agent (C).

Abstract: Provided are a resin composition capable of forming a cured film excellent in elongation properties; a polymer suitable as a component contained in the composition; a cured film formed from the composition; and an electronic part including the cured film. The resin composition includes (A) a polymer containing a structural unit represented by the formula (a1) and a structural unit represented by the formula (a2); and (F) a solvent, wherein in the formula (a1), R1s are each independently a hydrogen atom or hydroxyl group, provided that at least one R1 is hydroxyl group; and R2 is a hydrogen atom or a C1-4 alkyl group; and in the formula (a2), R3s are each independently a group having a cationic polymerizable group, or a hydrogen atom, provided that at least one R3 is a group having a cationic polymerizable group; and R4 is a hydrogen atom or a C1-4 alkyl group.