Abstract: According to one embodiment, a substrate processing apparatus has a treatment tank, a holder to hold the substrate while in the treatment tank, a chemical discharge pipe below a position of the holder for supplying a chemical solution to the treatment tank, a bubble discharge pipe below the position of the holder for discharging a gas. The first bubble discharge pipe is closer along a horizontal direction to a centerline of the treatment tank than is the chemical discharge pipe. A rectifying plate is disposed below the position of the holder and extends from a position above the chemical discharge pipe to a position above the first bubble discharge pipe at an incline with respect to the first direction horizontal.

Abstract: A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.

Abstract: A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a container configured to contain a substrate, and a pipe configured to supply the container with liquid to treat the substrate. The apparatus further includes an ejector including a first passage where the liquid introduced from the pipe and the liquid introduced from the container are joined and pass through, and a first opening configured to eject the liquid that has passed through the first passage. Furthermore, the first passage has an area where a sectional area of the first passage becomes large as advancing downstream in the liquid.

Abstract: According to one embodiment, a substrate processing device includes a processing tank to store a liquid and to permit a plurality of substrates to be immersed in the liquid at the same time. The device also has a holder member configured to hold the plurality of substrates while the substrates are immersed into and withdrawn from the liquid in the processing tank as well as a straightening vane configured to be positioned in the liquid above the plurality of substrates in the processing tank. The straightening vane includes vane portions extending in a vertical direction into the processing tank that have a length in the vertical direction that is greater than a cross sectional width in a horizontal direction perpendicular to the vertical direction. A bubble discharge pipe is disposed in the processing tank below the holder member. The bubble discharge pipe discharges gas into the liquid.

Abstract: A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a substrate holder configured to hold a plurality of substrates such that the substrates are arranged in parallel to each other. The apparatus further includes a fluid injector including a plurality of openings that inject fluid to areas in which distances from surfaces of the substrates are within distances between centers of the substrates adjacent to each other, the fluid injector being configured to change injection directions of the fluid injected from the openings in planes that are parallel to the surfaces of the substrates by self-oscillation.

Abstract: A semiconductor storage device according to an embodiment comprises a substrate. A stack body having first conductive layers and first insulating layers alternately stacked in a first direction is provided on the substrate. A pillar part extends in the first direction in the stack body and has a memory film. An insulating member extends in the first direction at a position different from that of the pillar part in the stack body. A phosphorus-containing insulator is provided below the stack body and the insulating member.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a container configured to contain a substrate, and a pipe configured to supply the container with liquid to treat the substrate. The apparatus further includes an ejector including a first passage where the liquid introduced from the pipe and the liquid introduced from the container are joined and pass through, and a first opening configured to eject the liquid that has passed through the first passage. Furthermore, the first passage has an area where a sectional area of the first passage becomes large as advancing downstream in the liquid.

Abstract: A semiconductor processing device according to an embodiment includes a processing tank configured to store a chemical therein to allow a semiconductor substrate to be immersed in the chemical. A gas supply part is provided below the semiconductor substrate accommodated in the processing tank and is configured to supply air bubbles to the chemical from below the semiconductor substrate. A chemical supply part is provided above the gas supply part and below the semiconductor substrate and is configured to discharge the chemical caused to circulate from the processing tank, towards the air bubbles appearing from the gas supply part.

Abstract: A semiconductor storage device according to an embodiment comprises a substrate. A stack body having first conductive layers and first insulating layers alternately stacked in a first direction is provided on the substrate. A pillar part extends in the first direction in the stack body and has a memory film. An insulating member extends in the first direction at a position different from that of the pillar part in the stack body. A phosphorus-containing insulator is provided below the stack body and the insulating member.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a substrate holder configured to hold a plurality of substrates such that the substrates are arranged in parallel to each other. The apparatus further includes a fluid injector including a plurality of openings that inject fluid to areas in which distances from surfaces of the substrates are within distances between centers of the substrates adjacent to each other, the fluid injector being configured to change injection directions of the fluid injected from the openings in planes that are parallel to the surfaces of the substrates by self-oscillation.

Abstract: A semiconductor processing device according to an embodiment includes a processing tank configured to store a chemical therein to allow a semiconductor substrate to be immersed in the chemical. A gas supply part is provided below the semiconductor substrate accommodated in the processing tank and is configured to supply air bubbles to the chemical from below the semiconductor substrate. A chemical supply part is provided above the gas supply part and below the semiconductor substrate and is configured to discharge the chemical caused to circulate from the processing tank, towards the air bubbles appearing from the gas supply part.

Abstract: In one embodiment, a dust collecting apparatus includes a container configured to contain a fluid that includes particles to be collected. The apparatus further includes one or more sound sources configured to generate, in the container, a standing sound wave including at least one node to trap the particles in a vicinity of the node. The one or more sound sources are configured to generate the standing sound wave so that the node does not contact a wall face of the container or contacts a predetermined portion of the wall face of the container. The predetermined portion is formed of a member that prevents the particles from leaving from the node located in a vicinity of the predetermined portion.

Abstract: In one embodiment, a substrate treatment apparatus includes cleaning and rinse modules configured to clean and rinse a surface of a substrate provided with a pattern, and a solidifying agent containing liquid supplying module configured to supply a solidifying agent containing liquid that contains a solidifying agent to the cleaned and rinsed surface of the substrate. The apparatus further includes a precipitation module configured to precipitate the solidifying agent as solid on the surface of the substrate, and a decomposition module configured to decompose and gasify the solid to remove the solid from the surface of the substrate. The solidifying agent contains an ammonium salt, and the ammonium salt contains an ammonium ion or an ion having a structure in which at least one of four hydrogen atoms of an ammonium ion is substituted with another atom or atom group.

Abstract: In one embodiment, a dust collecting apparatus includes a container configured to contain a fluid that includes particles to be collected. The apparatus further includes one or more sound sources configured to generate, in the container, a standing sound wave including at least one node to trap the particles in a vicinity of the node. The one or more sound sources are configured to generate the standing sound wave so that the node does not contact a wall face of the container or contacts a predetermined portion of the wall face of the container. The predetermined portion is formed of a member that prevents the particles from leaving from the node located in a vicinity of the predetermined portion.

Abstract: In one embodiment, a substrate treatment method includes cleaning and rinsing a surface of a substrate provided with a pattern, and supplying a solidifying agent containing liquid that contains a solidifying agent to the cleaned and rinsed surface of the substrate. The method further includes precipitating the solidifying agent as solid on the surface of the substrate, and decomposing and gasifying the solid to remove the solid from the surface of the substrate. Furthermore the solidifying agent contains an ammonium salt, and the ammonium salt contains an ammonium ion or an ion having a structure in which at least one of four hydrogen atoms of an ammonium ion is substituted with another atom or an atom group.

Abstract: A method of manufacturing a semiconductor device includes processing a plurality of substrates each provided with an etch target by using a chemical liquid, the chemical liquid used repeatedly and being mixed with water for adjustment of an etch rate.

Abstract: A method of manufacturing a semiconductor device includes processing a plurality of substrates each provided with an etch target by using a chemical liquid, the chemical liquid used repeatedly and being mixed with water for adjustment of an etch rate.