Abstract: A circuit module comprises a substrate module, an electronic component, and a first conductive joining member. The substrate module includes a circuit substrate having an upper main surface and a lower main surface, an insulating member covering the upper main surface of the circuit substrate, an insulating member covering the upper main surface of the circuit substrate, and a first metal pin that passes through the insulating member parallel to a vertical axis and is electrically connected to the circuit substrate. The first metal pin has a first exposed portion. The first exposed portion is exposed from the insulating member to face a right direction. A first outer electrode has a left projecting portion projecting in a left direction from the left surface. A first conductive joining member joins the first exposed portion and the left projecting portion to each other.

Abstract: A Group-III element nitride semiconductor substrate includes: a first surface; and a second surface. The Group-III element nitride semiconductor substrate has a c-plane tilted with respect to a direction of the first surface, and a direction of the tilt falls between a <1-100> direction and a <11-20> direction.

Abstract: An apparatus including: a first frame holding a first optical element, a second frame holding a second optical element, a third frame holding a third optical element, in order along an optical axis; a first driving unit moving the first frame when energized and holding the first frame when unenergized; a second driving unit moving the second frame when energized and not holding the second frame when unenergized; a third driving unit moving the third frame when energized and hold a position of the third frame when unenergized; and a controller controlling the first, second and third driving units, wherein the controller controls the second driving unit to become unenergized after at least a part of at least one of the first and third frames is moved within a movable range of the second frame.

Abstract: A rolling load prediction method predicts a rolling load of a rolling mill for rolling steel and includes predicting the rolling load of the rolling mill in a case where the steel is rolled under an operating condition for prediction, by inputting the operating condition for prediction into a rolling load prediction model that has been trained with operation record data including at least a factor related to a temperature of the steel as an input variable and an actual value of the rolling load of the rolling mill as an output variable.

Abstract: A vertical external-cavity surface-emitting laser (VECSEL) whose blueshift is reduced also in a high intensity range of emitted laser light is realized. A surface-emitting device for VECSEL includes a base substrate made of GaN and c-axis oriented, and an emitter structure formed of a group 13 nitride semiconductor and provided on the base substrate. The emitter structure is formed of unit deposition parts, each of which is provided on the base substrate and includes a DBR layer having a distributed Bragg reflection structure and an active layer that has a multiple quantum well structure and generates excitation emission in response to irradiation with external laser light. A c-axis orientation of each of the unit deposition parts conforms to the c-axis orientation of the base substrate located directly below the unit deposition parts. Grooves are formed between the unit deposition parts.

Abstract: An electric compressor includes a compression mechanism that compresses refrigerant, an electric motor that drives the compression mechanism, a drive circuit that drives the electric motor, a housing that forms therein a motor chamber in which the electric motor is accommodated, a cover that is attached to the housing, a rotary shaft, and a relay terminal portion. The cover is configured to cooperate with the housing to form a drive circuit chamber in which the drive circuit is accommodated. Rotation of the electric motor is transmitted to the compression mechanism through the rotary shaft. The relay terminal portion provides electrical connection between a wire of the drive circuit and a wire of the electric motor. The housing includes a partition wall that separates the motor chamber and the drive circuit chamber from each other. The relay terminal portion is disposed between the partition wall and the rotary shaft.

Abstract: Provided is a light emitting device composite substrate suitable for manufacturing large-area light emitting devices at low cost. The light emitting device composite substrate comprises a substrate composed of an oriented polycrystalline alumina sintered body, and a light emitting functional layer formed on the substrate and having two or more layers composed of semiconductor single crystal grains, wherein each of the two or more layers has a single crystal structure in a direction approximately normal to the substrate.

Abstract: A vertical external-cavity surface-emitting laser (VECSEL) whose blueshift is reduced also in a high intensity range of emitted laser light is realized. A surface-emitting device for VECSEL includes a base substrate made of GaN and c-axis oriented, and an emitter structure formed of a group 13 nitride semiconductor and provided on the base substrate. The emitter structure is formed of unit deposition parts, each of which is provided on the base substrate and includes a DBR layer having a distributed Bragg reflection structure and an active layer that has a multiple quantum well structure and generates excitation emission in response to irradiation with external laser light. A c-axis orientation of each of the unit deposition parts conforms to the c-axis orientation of the base substrate located directly below the unit deposition parts. Grooves are formed between the unit deposition parts.

Abstract: An electric compressor includes a compression mechanism that compresses refrigerant, an electric motor that drives the compression mechanism, a drive circuit that drives the electric motor, a housing that forms therein a motor chamber in which the electric motor is accommodated, a cover that is attached to the housing, a rotary shaft, and a relay terminal portion. The cover is configured to cooperate with the housing to form a drive circuit chamber in which the drive circuit is accommodated. Rotation of the electric motor is transmitted to the compression mechanism through the rotary shaft. The relay terminal portion provides electrical connection between a wire of the drive circuit and a wire of the electric motor. The housing includes a partition wall that separates the motor chamber and the drive circuit chamber from each other. The relay terminal portion is disposed between the partition wall and the rotary shaft.

Abstract: An optical device that includes first and second members that is rotatable relative to the first member is provided that includes a coupling unit that is provided for the second member; and a position detecting unit that has a detecting part disposed at the first member and a detected part disposed at the second member, and is configured to detect a position of the second member relative to the first member. When viewed from a direction along a rotation central axis of the second member, an angle between a first axis and a second axis at a position within a rotational range of the second member is 90 degrees. The first axis is an axis that is perpendicular to the rotation central axis and passes through the detecting part and the second axis is an axis that is perpendicular to the rotation central axis and passes through the coupling unit.

Abstract: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 ?m or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.

Abstract: Provided is a semiconductor device in which a reverse leakage current is suppressed and the mobility of a two-dimensional electron gas is high. A semiconductor device includes: an epitaxial substrate in which a group of group-III nitride layers are laminated on a base substrate such that a (0001) crystal plane is substantially in parallel with a substrate surface; and a Schottky electrode. The epitaxial substrate includes: a channel layer made of a first group-III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>0); a barrier layer made of a second group-III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>0, y2>0); an intermediate layer made of GaN adjacent to the barrier layer; and a cap layer made of AlN and adjacent to the intermediate layer. A Schottky electrode is bonded to the cap layer.

Abstract: Provided is a light emitting device composite substrate suitable for manufacturing large-area light emitting devices at low cost. The light emitting device composite substrate comprises a substrate composed of an oriented polycrystalline alumina sintered body, and a light emitting functional layer formed on the substrate and having two or more layers composed of semiconductor single crystal grains, wherein each of the two or more layers has a single crystal structure in a direction approximately normal to the substrate.

Abstract: An optical device that includes first and second members that is rotatable relative to the first member is provided that includes a coupling unit that is provided for the second member; and a position detecting unit that has a detecting part disposed at the first member and a detected part disposed at the second member, and is configured to detect a position of the second member relative to the first member. When viewed from a direction along a rotation central axis of the second member, an angle between a first axis and a second axis at a position within a rotational range of the second member is 90 degrees. The first axis is an axis that is perpendicular to the rotation central axis and passes through the detecting part and the second axis is an axis that is perpendicular to the rotation central axis and passes through the coupling unit.

Abstract: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 ?m or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.

Abstract: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 ?m or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.

Abstract: Provided is a method for treating a group III nitride substrate capable of obtaining, in the case where a group III nitride layer is laminated thereon, a group III nitride substrate that can form an electronic device having excellent characteristics. The method for treating a group III nitride substrate includes the steps of CMPing a surface of a substrate, elevating a temperature of the group III nitride substrate after the CMP process to a predetermined annealing temperature under a nitrogen gas atmosphere, and holding the group III nitride substrate whose temperature has been elevated to the annealing temperature for four minutes or more and eight minutes or less in a first mixed atmosphere of a hydrogen gas and a nitrogen gas or a second mixed atmosphere of a hydrogen gas and an ammonia gas.

Abstract: Provided is a crack-free epitaxial substrate with reduced warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a superlattice layer group in which a plurality of superlattice layers are laminated, and a crystal layer. The superlattice layer is formed of a first unit layer and a second unit layer made of group-III nitrides having different compositions being alternately and repeatedly laminated. The crystal layer is made of a group-III nitride and formed above the base substrate so as to be positioned at an upper side of the superlattice layer group relative to the base substrate. The superlattice layer group has a compressive strain contained therein. In the superlattice layer group, the more distant the superlattice layer is from the base substrate, the greater the compressive strain becomes.

Abstract: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 ?m or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.

Abstract: Provided is an epitaxial substrate for use in a semiconductor element, having excellent characteristics and capable of suitably suppressing diffusion of elements from a cap layer. An epitaxial substrate for use in a semiconductor element, in which a group of group-III nitride layers are laminated on a base substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a substrate surface of the base substrate, includes: a channel layer made of a first group-III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>0); a barrier layer made of a second group-III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>0, y2>0); an anti-diffusion layer made of AlN and having a thickness of 3 nm or more; and a cap layer made of a third group-III nitride having a composition of Inx3Aly3Gaz3N (x3+y3+z3=1, z3>0).