Abstract: There is provided a front structure of a handlebar vehicle that allows clutch and brake operations to be easily performed with one hand of the rider, a clutch lever that activates a clutch device and a brake lever of a brake device that activates a rear-wheel brake being arranged around a grip provided at a side-end part of a steering handlebar. The brake device is provided with a hydraulic master cylinder provided with a cylinder hole that accommodates a piston, and a brake lever that activates the piston. A clutch grip operation part of the clutch lever and a brake grip operation part of the brake lever extend along the grip and are able to rotate in the same rotation direction, and the clutch lever is disposed higher in the body of the vehicle than the brake lever.

Abstract: A disc brake for a vehicle capable of suppressing uneven abrasion of a lining of a friction pad depending on the rigidity of a caliper body and the material of the lining of the friction pad and capable of easily changing an operation feeling. In this disc brake for a vehicle, an inlet-side torque transmitting member 7 for receiving a braking torque of a friction pad 4 and an outlet-side torque transmitting member 8 are each mounted to a friction pad storage portion 3g of a caliper body 3. A first torque transmitting portion 7a of the inlet-side torque transmitting member 7 and a second torque transmitting portion 8a of the outlet-side torque transmitting member 8 are formed so that a thickness (T1) of the first torque transmitting portion 7a in the disc circumferential direction and a thickness (T2) of the second torque transmitting portion 8a in the disc circumferential direction differ from each other.

Abstract: A control device (70) of a plant which controls operation amounts of a plurality of types of equipment constituting the plant, the control device includes a prediction model deriving unit (71) that derives a prediction model from which a monitoring target value is output, an adjustment amount calculating unit (72) that calculates adjustment amounts of operation amounts in the case where the monitoring target value becomes a desired value and calculates differences between the operation amounts of existing control and the calculated operation amounts as first adjustment amounts, a constraint condition setting unit (73) that sets constraint conditions based on a measurement value and operation conditions of the plant 1, and an operation amount calculating unit (74) that calculates second adjustment amounts to which the constraint conditions are applied and calculates a plurality of the adjusted operation amounts based on each of the calculated second adjustment amounts.

Abstract: A semiconductor laminate includes a substrate formed of a group III-V compound semiconductor and a quantum well structure disposed on the substrate. The quantum well structure includes a second element layer formed of a group III-V compound semiconductor and containing Sb and a first element layer formed of a group III-V compound semiconductor and disposed in contact with the second element layer. In the first element layer, the thickness of a region in which the content of Sb decreases in a direction away from the substrate from 80% of the maximum content of Sb in the second element layer to 6% of the maximum content is from 0.5 nm to 3.0 nm inclusive.

Abstract: A semiconductor laminate includes a substrate formed of a group III-V compound semiconductor and a quantum well structure disposed on the substrate. The quantum well structure includes a second element layer formed of a group III-V compound semiconductor and containing Sb and a first element layer formed of a group III-V compound semiconductor and disposed in contact with the second element layer. In the first element layer, the thickness of a region in which the content of Sb decreases in a direction away from the substrate from 80% of the maximum content of Sb in the second element layer to 6% of the maximum content is from 0.5 nm to 3.0 nm inclusive.